component
BSC032N04LS-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSC032N04LS-VB
VBsemi Elec · MOSFETs · DFN5x6-8
BSC032N04LS-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1, marked with a dot); VDS rated 40 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; continuous drain current is 120 A at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; connect in parallel with the other source pins. |
| 4 | G | input | Gate terminal; gate-source voltage is limited to ±20 V, with a threshold of 2.0 to 4.0 V at 250 µA. |
| 5 | D | passive | Drain terminal; drain-source voltage is limited to 40 V. |
| 6 | D | passive | Drain terminal; pulsed drain current is limited to 360 A. |
| 7 | D | passive | Drain terminal; connect in parallel with the other drain pins. |
| 8 | D | passive | Drain terminal; RDS(on) is 0.0025 Ω at VGS = 10 V and ID = 20 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 40 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 40 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 40 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 100 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Total Gate Charge | Qg | 78 | 117 | nC | VDS = 20 V, VGS = 10 V, ID = 20 A | 2 | |
| Total Gate Charge | Qg | 38 | 57 | nC | VDS = 20 V, VGS = 4.5 V, ID = 20 A | 2 | |
| Gate Resistance | Rg | 0.2 | 0.7 | 1.4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 14 | 25 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 41 | 65 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 9 | 18 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 22 | 35 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 42 | 65 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 13 | 25 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 50 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 60 | A | 2 | |||
| Body Diode Voltage | VSD | 0.75 | 1.1 | V | IS = 5 A | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 48 | 72 | nC | IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Time | trr | 40 | 60 | ns | IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Drain-Source Voltage | VDS | 40 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 120 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | 80 | A | TC = 70 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | 33 | A | TA = 25 °C, t = 10 s | 1 | ||
| Continuous Drain Current | ID | 26 | A | TA = 70 °C, t = 10 s | 1 | ||
| Pulsed Drain Current | IDM | 360 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 100 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 4.9 | A | TA = 25 °C, t = 10 s | 1 | ||
| Single Pulse Avalanche Current | IAS | 40 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 83 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 53 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 5.4 | W | TA = 25 °C, t = 10 s | 1 | ||
| Maximum Power Dissipation | PD | 3.4 | W | TA = 70 °C, t = 10 s | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Peak Temperature | 260 | °C | 1 | ||||
| Maximum Junction-to-Ambient | RthJA | 18 | 23 | °C/W | t ≤ 10 s, surface mounted on 1" x 1" FR4 board | 1 | |
| Maximum Junction-to-Case (Drain) | RthJC | 1 | 1.5 | °C/W | Steady State | 1 | |
| Drain-Source On-State Resistance | RDS(on) | 0.0025 | Ω | VGS = 10 V, ID = 20 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.0028 | Ω | VGS = 6.5 V, ID = 20 A | 2 | ||
| Forward Transconductance | gfs | 102 | S | VDS = 15 V, ID = 20 A | 2 | ||
| Input Capacitance | Ciss | 4750 | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 610 | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 275 | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 13 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 11 | nC | 2 | |||
| VDS Temperature Coefficient | ΔVDS/TJ | 43 | mV/°C | ID = 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | -6 | mV/°C | ID = 250 µA | 2 |
CAD (KiCad official)
- Symbol:
BSC032N04LS-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
bsc032n04ls-vb-etched.step/bsc032n04ls-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc032n04ls-vb.step/bsc032n04ls-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
7b8202976e244667, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSC032N04LS-VB
**VBsemi Elec** · MOSFETs · DFN5x6-8
BSC032N04LS-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1, marked with a dot); VDS rated 40 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; continuous drain current is 120 A at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; connect in parallel with the other source pins. |
| 4 | G | input | Gate terminal; gate-source voltage is limited to ±20 V, with a threshold of 2.0 to 4.0 V at 250 µA. |
| 5 | D | passive | Drain terminal; drain-source voltage is limited to 40 V. |
| 6 | D | passive | Drain terminal; pulsed drain current is limited to 360 A. |
| 7 | D | passive | Drain terminal; connect in parallel with the other drain pins. |
| 8 | D | passive | Drain terminal; RDS(on) is 0.0025 Ω at VGS = 10 V and ID = 20 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 40 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 40 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 40 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 100 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Total Gate Charge | Qg | | 78 | 117 | nC | VDS = 20 V, VGS = 10 V, ID = 20 A | 2 |
| Total Gate Charge | Qg | | 38 | 57 | nC | VDS = 20 V, VGS = 4.5 V, ID = 20 A | 2 |
| Gate Resistance | Rg | 0.2 | 0.7 | 1.4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 14 | 25 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 41 | 65 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 9 | 18 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 22 | 35 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 42 | 65 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 13 | 25 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS | | | 50 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM | | | 60 | A | | 2 |
| Body Diode Voltage | VSD | | 0.75 | 1.1 | V | IS = 5 A | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 48 | 72 | nC | IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Time | trr | | 40 | 60 | ns | IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Drain-Source Voltage | VDS | | | 40 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA = 25 °C | 1 |
| Continuous Drain Current | ID | | | 120 | A | TC = 25 °C, TJ = 150 °C | 1 |
| Continuous Drain Current | ID | | | 80 | A | TC = 70 °C, TJ = 150 °C | 1 |
| Continuous Drain Current | ID | | | 33 | A | TA = 25 °C, t = 10 s | 1 |
| Continuous Drain Current | ID | | | 26 | A | TA = 70 °C, t = 10 s | 1 |
| Pulsed Drain Current | IDM | | | 360 | A | | 1 |
| Continuous Source-Drain Diode Current | IS | | | 100 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS | | | 4.9 | A | TA = 25 °C, t = 10 s | 1 |
| Single Pulse Avalanche Current | IAS | | | 40 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 80 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 83 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 53 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD | | | 5.4 | W | TA = 25 °C, t = 10 s | 1 |
| Maximum Power Dissipation | PD | | | 3.4 | W | TA = 70 °C, t = 10 s | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Soldering Peak Temperature | | | | 260 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 18 | 23 | °C/W | t ≤ 10 s, surface mounted on 1" x 1" FR4 board | 1 |
| Maximum Junction-to-Case (Drain) | RthJC | | 1 | 1.5 | °C/W | Steady State | 1 |
| Drain-Source On-State Resistance | RDS(on) | | 0.0025 | | Ω | VGS = 10 V, ID = 20 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.0028 | | Ω | VGS = 6.5 V, ID = 20 A | 2 |
| Forward Transconductance | gfs | | 102 | | S | VDS = 15 V, ID = 20 A | 2 |
| Input Capacitance | Ciss | | 4750 | | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 610 | | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 275 | | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 |
| Gate-Source Charge | Qgs | | 13 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 11 | | nC | | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ | | 43 | | mV/°C | ID = 250 µA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | | -6 | | mV/°C | ID = 250 µA | 2 |
## CAD (KiCad official)
- Symbol: `BSC032N04LS-VB`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `bsc032n04ls-vb-etched.step` / `bsc032n04ls-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsc032n04ls-vb.step` / `bsc032n04ls-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/bsc032n04ls-vb-datasheet.pdf) (8 pp, sha256 `7b8202976e244667`, retrieved 2026-10-31, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bsc032n04ls-vb-datasheet.pdf)