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BSC031N06NS3 G-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSC031N06NS3 G-VB
VBsemi Elec · MOSFETs · DFN5x6-8
BSC031N06NS3 G-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1 marked with dot); continuous source current (diode conduction) is rated 80 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied to the same source node as pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied to the same source node as pins 1 and 2. |
| 4 | G | input | Gate terminal with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain terminal with VDS rated 60 V and continuous drain current of 100 A at TC = 25 °C. |
| 6 | D | passive | Drain terminal, tied to the same drain node as pins 5, 7 and 8. |
| 7 | D | passive | Drain terminal, tied to the same drain node as pins 5, 6 and 8. |
| 8 | D | passive | Drain terminal, tied to the same drain node as pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TJ = 175 °C) | ID | 85 | A | TC = 25 °C | 1 | ||
| Pulsed Drain Current | IDM | 100 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 80 | A | Package limited | 1 | ||
| Avalanche Current | IAS | 70 | A | 1 | |||
| Single Avalanche Energy | EAS | 125 | mJ | L = 0.1 mH, duty cycle ≤ 1 % | 1 | ||
| Maximum Power Dissipation | PD | 136 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 15 | 18 | °C/W | t ≤ 10 s; surface mounted on 1in x 1in FR4 board | 1 | |
| Maximum Junction-to-Ambient (Steady State) | RthJA | 40 | 50 | °C/W | Steady state; surface mounted on 1in x 1in FR4 board | 1 | |
| Maximum Junction-to-Case | RthJC | 0.85 | 1.1 | °C/W | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 60 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 60 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 60 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.008 | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.01 | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.005 | Ω | VGS = 4.5 V, ID = 15 A | 2 | ||
| Forward Transconductance | gfs | 60 | S | VDS = 15 V, ID = 20 A | 2 | ||
| Total Gate Charge | Qg | 47 | 70 | nC | VDS = 30 V, VGS = 10 V, ID = 50 A | 2 | |
| Turn-On Delay Time | td(on) | 10 | 20 | ns | VDD = 30 V, RL = 0.6, ID 50 A, VGEN = 10 V, Rg = 2.5 | 2 | |
| Rise Time | tr | 15 | 25 | ns | VDD = 30 V, RL = 0.6, ID 50 A, VGEN = 10 V, Rg = 2.5 | 2 | |
| Turn-Off Delay Time | td(off) | 35 | 50 | ns | VDD = 30 V, RL = 0.6, ID 50 A, VGEN = 10 V, Rg = 2.5 | 2 | |
| Fall Time | tf | 20 | 30 | ns | VDD = 30 V, RL = 0.6, ID 50 A, VGEN = 10 V, Rg = 2.5 | 2 | |
| Pulsed Current | ISM | 60 | A | 2 | |||
| Reverse Recovery Time | trr | 45 | 100 | ns | IF = 20 A, di/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
BSC031N06NS3 G-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
bsc031n06ns3-g-vb-etched.step/bsc031n06ns3-g-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc031n06ns3-g-vb.step/bsc031n06ns3-g-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
936f06453f76ad85, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).