component
BSC030P03NS3G-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373374375376377378379380381382383384385386387388389390391392393394395396397398399400401402403404405406407408409410411412413414415416417418419420421422423424425426427428429430431432433434435436437438439440441442443444445446447448449450451452453454455456457458459460461462463464465466467468469470471472473474475476477478479480481482483484485486487488
{
"schema_version": 1,
"type": "component",
"slug": "bsc030p03ns3g-hxy",
"title": "BSC030P03NS3G-HXY",
"brief": "HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"bsc030p03ns3g-hxy",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "BSC030P03NS3G-HXY",
"manufacturer": "HXY MOSFET",
"package": "DFN5x6-8L",
"pin_count": 9,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758126607380951040",
"parts": {
"symbol": "bsc030p03ns3g-hxy.kicad_sym",
"footprint": "bsc030p03ns3g-hxy.kicad_mod",
"model_3d": "bsc030p03ns3g-hxy-hero.glb",
"model_3d_plain": "bsc030p03ns3g-hxy-etched.glb",
"model_3d_step": "bsc030p03ns3g-hxy-etched.step",
"model_3d_step_plain": "bsc030p03ns3g-hxy.step",
"lbr": "bsc030p03ns3g-hxy.lbr"
},
"distributor_links": {
"lcsc": "C22367086"
},
"distributor_check": {
"checked_at": "2026-10-20T23:14:09Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "no match"
},
"mouser": {
"pn": null,
"status": "no match"
}
},
"pins": [
{
"number": "1",
"name": "S",
"type": "passive",
"description": "Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS) in the absolute maximum ratings."
},
{
"number": "2",
"name": "S",
"type": "passive",
"description": "Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS) in the absolute maximum ratings."
},
{
"number": "3",
"name": "S",
"type": "passive",
"description": "Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS) in the absolute maximum ratings."
},
{
"number": "4",
"name": "G",
"type": "input",
"description": "Gate terminal of the P-channel MOSFET, with a gate-source voltage rating of ±20 V and RDS(ON) specified at VGS = -4.5 V (6.0 mΩ typ.)."
},
{
"number": "5",
"name": "D",
"type": "passive",
"description": "Drain terminal of the P-channel MOSFET; continuous drain current is -100 A at TC = 25℃ (VGS = -10 V), limited by package rating."
},
{
"number": "6",
"name": "D",
"type": "passive",
"description": "Drain terminal of the P-channel MOSFET; continuous drain current is -100 A at TC = 25℃ (VGS = -10 V), limited by package rating."
},
{
"number": "7",
"name": "D",
"type": "passive",
"description": "Drain terminal of the P-channel MOSFET; continuous drain current is -100 A at TC = 25℃ (VGS = -10 V), limited by package rating."
},
{
"number": "8",
"name": "D",
"type": "passive",
"description": "Drain terminal of the P-channel MOSFET; continuous drain current is -100 A at TC = 25℃ (VGS = -10 V), limited by package rating."
},
{
"number": "9",
"name": "EP",
"type": "passive",
"description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The pin-to-number mapping is inferred from a text-only extraction of the package drawing on page 1 (; Datasheet does not describe an exposed thermal pad (EP) connection or whether it is a separate pin; ; The pin descriptions combine the absolute maximum ratings and electrical characteristics given for t",
"1/9 pins cited to the wrong page (name found elsewhere): ['7:D@p1']"
],
"pages_sent": 6,
"cost_usd": 0.014,
"at": "2026-10-20T23:12:04"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758126607380951040",
"pages": 6,
"sha256": "f2ff4cfc190cf504",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 9,
"described": 9,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "bsc030p03ns3g-hxy.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
6,
4.98,
0.92
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "13e5a2a05f78c2a0952534b2fb187d0be154d366a431374e398c7e2032779f1b",
"checked": "2026-10-20",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "bsc030p03ns3g-hxy-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
6,
4.98,
0.92
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "39140c53ebddf7e106fa953306ed0f18a28d0771690cc81721dd9016233c1360",
"checked": "2026-10-20",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "HXY MOSFET",
"Package": "DFN5x6-8L",
"Category": "Transistors/Thyristors",
"Pins": "9"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "f2ff4cfc190cf504c12a563c50e725c355fe557ce0c977eebd780dffc4cf0e70",
"rows": [
{
"name": "Drain-Source Breakdown Voltage",
"symbol": "BVDSS",
"kind": "electrical",
"unit": "V",
"min": -30,
"typ": null,
"max": null,
"conditions": "VGS=0V , ID=-250uA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Static Drain-Source On-Resistance",
"symbol": "RDS(ON)",
"kind": "electrical",
"unit": "m",
"min": null,
"typ": null,
"max": 4,
"conditions": "VGS=-10V , ID=-20A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Static Drain-Source On-Resistance",
"symbol": "RDS(ON)",
"kind": "electrical",
"unit": "m",
"min": null,
"typ": null,
"max": 6,
"conditions": "VGS=-4.5V , ID=-15A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": -1.2,
"typ": null,
"max": -2.5,
"conditions": "VGS=VDS , ID =-250uA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source Leakage Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "uA",
"min": null,
"typ": null,
"max": -1,
"conditions": "VDS=-24V , VGS=0V , TJ=25℃",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source Leakage Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "uA",
"min": null,
"typ": null,
"max": -5,
"conditions": "VDS=-24V , VGS=0V , TJ=55℃",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Source Leakage Current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VGS=±20V , VDS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Continuous Source Current",
"symbol": "IS",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": -100,
"conditions": "VG=VD=0V , Force Current",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Diode Forward Voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": -1.2,
"conditions": "VGS=0V , IS=-1A , TJ=25℃",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source Voltage",
"symbol": "VDS",
"kind": "absolute_maximum",
"unit": "V",
"min": -30,
"typ": null,
"max": null,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID@TC=25℃",
"kind": "absolute_maximum",
"unit": "A",
"min": -100,
"typ": null,
"max": null,
"conditions": "VGS @ 10V",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID@TC=100℃",
"kind": "absolute_maximum",
"unit": "A",
"min": -70,
"typ": null,
"max": null,
"conditions": "VGS @ 10V",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Drain Current",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": -250,
"typ": null,
"max": null,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Single Pulse Avalanche Energy",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 80,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Avalanche Current",
"symbol": "IAS",
"kind": "absolute_maximum",
"unit": "A",
"min": -70,
"typ": null,
"max": null,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Total Power Dissipation",
"symbol": "PD@TC=25℃",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 120,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Storage Temperature Range",
"symbol": "TSTG",
"kind": "absolute_maximum",
"unit": "℃",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction Temperature Range",
"symbol": "TJ",
"kind": "absolute_maximum",
"unit": "℃",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Thermal Resistance Junction-Ambient",
"symbol": "RθJA",
"kind": "thermal",
"unit": "℃/W",
"min": null,
"typ": null,
"max": 50,
"conditions": "surface mounted on 1 inch2 FR-4 board with 2OZ copper (note 1)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Thermal Resistance Junction-Case",
"symbol": "RθJC",
"kind": "thermal",
"unit": "℃/W",
"min": null,
"typ": null,
"max": 1.6,
"conditions": "surface mounted on 1 inch2 FR-4 board with 2OZ copper (note 1)",
"source_page": 1,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"bsc030p03ns3g-hxy"
],
"discovery_pitch": "BSC030P03NS3G-HXY (HXY MOSFET) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"bsc030p03ns3g-hxy.kicad_sym",
"bsc030p03ns3g-hxy.kicad_mod",
"bsc030p03ns3g-hxy.glb",
"bsc030p03ns3g-hxy.step",
"bsc030p03ns3g-hxy.lbr",
"docs/hero.png",
"docs/bsc030p03ns3g-hxy-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"bsc030p03ns3g-hxy-hero.glb",
"bsc030p03ns3g-hxy-hero.overlay.json",
"bsc030p03ns3g-hxy-etched.glb"
],
"visibility": {
"public": true
}
}