# BSC030P03NS3G-HXY

**HXY MOSFET** · MOSFETs · DFN5x6-8L

BSC030P03NS3G-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS) in the absolute maximum ratings. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS) in the absolute maximum ratings. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS) in the absolute maximum ratings. |
| 4 | G | input | Gate terminal of the P-channel MOSFET, with a gate-source voltage rating of ±20 V and RDS(ON) specified at VGS = -4.5 V (6.0 mΩ typ.). |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -100 A at TC = 25℃ (VGS = -10 V), limited by package rating. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -100 A at TC = 25℃ (VGS = -10 V), limited by package rating. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -100 A at TC = 25℃ (VGS = -10 V), limited by package rating. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -100 A at TC = 25℃ (VGS = -10 V), limited by package rating. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V , ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 4 | m | VGS=-10V , ID=-20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 6 | m | VGS=-4.5V , ID=-15A | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 |  | -2.5 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-24V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -5 | uA | VDS=-24V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Continuous Source Current | IS |  |  | -100 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | -30 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ | -100 |  |  | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ | -70 |  |  | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | -250 |  |  | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 80 | mJ |  | 1 |
| Avalanche Current | IAS | -70 |  |  | A |  | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 120 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 50 | ℃/W | surface mounted on 1 inch2 FR-4 board with 2OZ copper (note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 1.6 | ℃/W | surface mounted on 1 inch2 FR-4 board with 2OZ copper (note 1) | 1 |

## CAD (KiCad official)

- Symbol: `BSC030P03NS3G-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `bsc030p03ns3g-hxy-etched.step` / `bsc030p03ns3g-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsc030p03ns3g-hxy.step` / `bsc030p03ns3g-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758126607380951040) (6 pp, sha256 `f2ff4cfc190cf504`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bsc030p03ns3g-hxy-datasheet.pdf)