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BSC030N08NS5

Tokmas · MOSFETs · DFN-8(5x6)

BSC030N08NS5 from Tokmas, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal (pins 1-3 are source), part of the 80V, 130A N-channel MOSFET.
2 S passive Source terminal (pins 1-3 are source), part of the 80V, 130A N-channel MOSFET.
3 S passive Source terminal (pins 1-3 are source), part of the 80V, 130A N-channel MOSFET.
4 G input Gate terminal with VGS rating of ±20V and threshold of 2 to 4V at ID=250µA.
5 D passive Drain terminal (pins 5-8 are drain), VDS max 80V, continuous drain current 130A.
6 D passive Drain terminal (pins 5-8 are drain), VDS max 80V, continuous drain current 130A.
7 D passive Drain terminal (pins 5-8 are drain), VDS max 80V, continuous drain current 130A.
8 D passive Drain terminal (pins 5-8 are drain), VDS max 80V, continuous drain current 130A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Tokmas
Package DFN-8(5x6)
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=80V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 3 3.3 mΩ VGS=10V,ID=50A 2
Source-Drain Diode Forward Voltage VSD 1.3 V VGS=0V,IS=20A 2
Continuous Source Current IS 130 A VD=VG=0V 2
Pulsed Source Current ISM 390 A VD=VG=0V 3
Drain-Source Voltage VDS 80 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID 130 A TC=25℃ 1
Pulsed Drain Current IDM 390 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 194 mJ VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C 1
Power Dissipation PD 132 W TC=25℃ 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Case RƟJC 0.95 ℃/W 1
Thermal Resistance, Junction to Ambient RƟJA 62 ℃/W 1
Input Capacitance Ciss 5660 pF VDS=25V, VGS=0V, f=1MHZ 2
Output Capacitance Coss 1630 pF VDS=25V, VGS=0V, f=1MHZ 2
Reverse Transfer Capacitance Crss 95.1 pF VDS=25V, VGS=0V, f=1MHZ 2
Turn-On Delay Time td(on) 27 ns VDS=40V,ID=50A, RG=2Ω,VGS=10V 2
Rise Time tr 9 ns VDS=40V,ID=50A, RG=2Ω,VGS=10V 2
Turn-Off Delay Time td(off) 60.1 ns VDS=40V,ID=50A, RG=2Ω,VGS=10V 2
Fall Time tf 13 ns VDS=40V,ID=50A, RG=2Ω,VGS=10V 2
Total Gate Charge Qg 71.4 nC VGS=10V, VDS=40V, ID=50A 2
Gate-Source Charge Qgs 20 nC VGS=10V, VDS=40V, ID=50A 2
Gate-Drain Miller Charge Qgd 9 nC VGS=10V, VDS=40V, ID=50A 2
Reverse Recovery Charge Qrr 87.9 nC IDS = 50 A, VGS = 0 V, dISD/dt = 100 A/μs 3
Reverse Recovery Time Trr 67.2 ns IDS = 50 A, VGS = 0 V, dISD/dt = 100 A/μs 3

CAD (KiCad official)

  • Symbol: BSC030N08NS5
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: bsc030n08ns5-etched.step / bsc030n08ns5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc030n08ns5.step / bsc030n08ns5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (5 pp, sha256 e8c4a44969f6695e, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF