BSC028N06NS-HXY

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  "version": "0.1.0",
  "type": "component",
  "description": "HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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  "component": {
    "mpn": "BSC028N06NS-HXY",
    "manufacturer": "HXY MOSFET",
    "package": "DFN5x6-8L",
    "pin_count": 9,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/a089d9f9f0da81c71e36f5e7a55ab68b.pdf",
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    "distributor_links": {
      "lcsc": "C20606291"
    },
    "distributor_check": {
      "checked_at": "2026-10-23T03:28:52Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
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      "mouser": {
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    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, one of three paralleled source pins (1-3), with continuous drain current up to 125 A at TC=25℃."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, one of three paralleled source pins (1-3), with continuous drain current up to 125 A at TC=25℃."
      },
      {
        "number": "3",
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        "type": "passive",
        "description": "Source of the N-channel MOSFET, one of three paralleled source pins (1-3), with continuous drain current up to 125 A at TC=25℃."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate of the N-channel MOSFET, rated ±20 V gate-source maximum with a threshold of 1.2 to 2.2 V at ID=250 μA."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, one of four paralleled drain pins (5-8), rated 60 V drain-source maximum."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, one of four paralleled drain pins (5-8), rated 60 V drain-source maximum."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, one of four paralleled drain pins (5-8), rated 60 V drain-source maximum."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, one of four paralleled drain pins (5-8), rated 60 V drain-source maximum."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
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      }
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        "guard_notes": [
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