component
BSC028N06NS-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSC028N06NS-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
BSC028N06NS-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, one of three paralleled source pins (1-3), with continuous drain current up to 125 A at TC=25℃. |
| 2 | S | passive | Source of the N-channel MOSFET, one of three paralleled source pins (1-3), with continuous drain current up to 125 A at TC=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, one of three paralleled source pins (1-3), with continuous drain current up to 125 A at TC=25℃. |
| 4 | G | input | Gate of the N-channel MOSFET, rated ±20 V gate-source maximum with a threshold of 1.2 to 2.2 V at ID=250 μA. |
| 5 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (5-8), rated 60 V drain-source maximum. |
| 6 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (5-8), rated 60 V drain-source maximum. |
| 7 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (5-8), rated 60 V drain-source maximum. |
| 8 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (5-8), rated 60 V drain-source maximum. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 2.4 | 2.9 | mΩ | VGS=10V, ID=20A | 2 | |
| Input Capacitance | Ciss | 4610 | 6915 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 | |
| Output Capacitance | Coss | 2188 | 3282 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 125 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 641 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=40A | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID@TC=25℃ | 125 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 101 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 641 | A | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 189 | mJ | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 113 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.11 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient | RθJA | 39.4 | ℃/W | 1 | |||
| Total Gate Charge | Qg | 74.37 | nC | VDS=30V, ID=40A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 17.26 | nC | VDS=30V, ID=40A, VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 9.44 | nC | VDS=30V, ID=40A, VGS=10V | 2 | ||
| Turn-off Fall Time | tf | 105.07 | ns | VDD=30V, ID=40A, RG=2.7Ω, VGS=10V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 52.78 | ns | TJ=25℃, IF=40A, dI/dt=100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 56.31 | nC | TJ=25℃, IF=40A, dI/dt=100A/μs | 2 |
CAD (KiCad official)
- Symbol:
BSC028N06NS-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
bsc028n06ns-hxy-etched.step/bsc028n06ns-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc028n06ns-hxy.step/bsc028n06ns-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (8 pp, sha256
34be916e5d030523, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSC028N06NS-HXY
**HXY MOSFET** · MOSFETs · DFN5x6-8L
BSC028N06NS-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, one of three paralleled source pins (1-3), with continuous drain current up to 125 A at TC=25℃. |
| 2 | S | passive | Source of the N-channel MOSFET, one of three paralleled source pins (1-3), with continuous drain current up to 125 A at TC=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, one of three paralleled source pins (1-3), with continuous drain current up to 125 A at TC=25℃. |
| 4 | G | input | Gate of the N-channel MOSFET, rated ±20 V gate-source maximum with a threshold of 1.2 to 2.2 V at ID=250 μA. |
| 5 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (5-8), rated 60 V drain-source maximum. |
| 6 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (5-8), rated 60 V drain-source maximum. |
| 7 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (5-8), rated 60 V drain-source maximum. |
| 8 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (5-8), rated 60 V drain-source maximum. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 2.4 | 2.9 | mΩ | VGS=10V, ID=20A | 2 |
| Input Capacitance | Ciss | | 4610 | 6915 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss | | 2188 | 3282 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | | | 125 | A | | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | 641 | A | | 2 |
| Drain to Source Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=40A | 2 |
| Drain-Source Voltage | VDS | | | 60 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | 125 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | 101 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 641 | A | TC=25℃ | 1 |
| Single Pulse Avalanche Energy | EAS | | | 189 | mJ | TC=25℃ | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 113 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 1.11 | ℃/W | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 39.4 | ℃/W | | 1 |
| Total Gate Charge | Qg | | 74.37 | | nC | VDS=30V, ID=40A, VGS=10V | 2 |
| Gate-Source Charge | Qgs | | 17.26 | | nC | VDS=30V, ID=40A, VGS=10V | 2 |
| Gate-Drain Charge | Qgd | | 9.44 | | nC | VDS=30V, ID=40A, VGS=10V | 2 |
| Turn-off Fall Time | tf | | 105.07 | | ns | VDD=30V, ID=40A, RG=2.7Ω, VGS=10V | 2 |
| Body Diode Reverse Recovery Time | trr | | 52.78 | | ns | TJ=25℃, IF=40A, dI/dt=100A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 56.31 | | nC | TJ=25℃, IF=40A, dI/dt=100A/μs | 2 |
## CAD (KiCad official)
- Symbol: `BSC028N06NS-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `bsc028n06ns-hxy-etched.step` / `bsc028n06ns-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsc028n06ns-hxy.step` / `bsc028n06ns-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/bsc028n06ns-hxy-datasheet.pdf) (8 pp, sha256 `34be916e5d030523`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bsc028n06ns-hxy-datasheet.pdf)