# BSC026N08NS5ATMA1-VB

**VBsemi Elec** · MOSFETs · DFN5x6-8

BSC026N08NS5ATMA1-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; continuous source current (diode conduction) is rated 80 A (package limited). |
| 2 | S | passive | Source terminal of the N-channel MOSFET; continuous source current (diode conduction) is rated 80 A (package limited). |
| 3 | S | passive | Source terminal of the N-channel MOSFET; continuous source current (diode conduction) is rated 80 A (package limited). |
| 4 | G | input | Gate terminal with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain terminal with an 85 V drain-source rating and a pulsed drain current of 420 A. |
| 6 | D | passive | Drain terminal with an 85 V drain-source rating and a pulsed drain current of 420 A. |
| 7 | D | passive | Drain terminal with an 85 V drain-source rating and a pulsed drain current of 420 A. |
| 8 | D | passive | Drain terminal with an 85 V drain-source rating and a pulsed drain current of 420 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 85 | A | TJ = 175 °C, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 420 | A | TC = 25 °C | 1 |
| Continuous Source Current (Diode Conduction) | IS |  |  | 80 | A | TC = 25 °C | 1 |
| Avalanche Current | IAS |  |  | 70 | A | L = 0.1 mH | 1 |
| Single Avalanche Energy | EAS |  |  | 133 | mJ | Duty Cycle ≤ 1 %, L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD |  |  | 136 | W | TC = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Junction-to-Ambient (t ≤ 10 s) | RthJA |  | 15 | 18 | °C/W | t ≤ 10 sec | 1 |
| Junction-to-Ambient (Steady State) | RthJA |  | 40 | 50 | °C/W | Steady State | 1 |
| Junction-to-Case | RthJC |  | 0.85 | 1.1 | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | VDS | 85 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 30V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (TJ = 125 °C) | IDSS |  |  | 50 | µA | VDS = 30V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current (TJ = 175 °C) | IDSS |  |  | 250 | µA | VDS = 30V, VGS = 0 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | 60 |  |  | A | VDS = 5 V, VGS = 10 V | 2 |
| Forward Transconductance | gfs |  | 60 |  | S | VDS = 15 V, ID = 20 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.003 |  | Ω | VGS = 10 V, ID = 20 A | 2 |
| Drain-Source On-State Resistance (TJ = 125 °C) | RDS(on) |  | 0.008 |  | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance (TJ = 175 °C) | RDS(on) |  | 0.01 |  | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance (4.5 V) | RDS(on) |  | 0.004 |  | Ω | VGS = 4.5 V, ID = 46 A | 2 |
| Input Capacitance | Ciss |  | 8600 |  | pF | VGS = 0 V, VDS = 85 V, f = 1 MHz | 2 |
| Output Capacitance | Coss |  | 470 |  | pF | VGS = 0 V, VDS = 85 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 225 |  | pF | VGS = 0 V, VDS = 85 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg |  | 92 |  | nC | VDS = 85 V, VGS = 10 V, ID = 50 A | 2 |
| Gate-Source Charge | Qgs |  | 16 |  | nC | VDS = 85 V, VGS = 10 V, ID = 50 A | 2 |
| Gate-Drain Charge | Qgd |  | 19 |  | nC | VDS = 85 V, VGS = 10 V, ID = 50 A | 2 |
| Turn-On Delay Time | td(on) |  | 20 | 21 | ns | VDD = 85 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Rise Time | tr |  | 15 | 25 | ns | VDD = 85 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 35 | 50 | ns | VDD = 85 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Fall Time | tf |  | 20 | 30 | ns | VDD = 85 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Pulsed Current | ISM |  |  | 420 | A | TC = 25 °C | 2 |
| Reverse Recovery Time | trr |  |  | 135 | ns | IF = 20 A, di/dt = 100 A/µs | 2 |

## CAD (KiCad official)

- Symbol: `BSC026N08NS5ATMA1-VB`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `bsc026n08ns5atma1-vb-etched.step` / `bsc026n08ns5atma1-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsc026n08ns5atma1-vb.step` / `bsc026n08ns5atma1-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/bsc026n08ns5atma1-vb-datasheet.pdf) (7 pp, sha256 `5b826091931ee605`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bsc026n08ns5atma1-vb-datasheet.pdf)