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BSC009N04LSSCATMA1

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Infineon Technologies MOSFETs, WSON-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSC009N04LSSCATMA1

Infineon Technologies · MOSFETs · WSON-8

BSC009N04LSSCATMA1 from Infineon Technologies, in a WSON-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source pin, connected together with pins 2-3 and the tab; the device is rated 40 V drain-source with 301 A continuous drain current at 25 °C case.
2 S passive Source pin, connected together with pins 1 and 3 and the tab.
3 S passive Source pin, connected together with pins 1-2 and the tab.
4 G input Gate pin of the N-channel logic-level MOSFET, with a gate-source voltage rating of ±20 V and a threshold of 1.2 V to 2 V.
5 D passive Drain pin, connected together with pins 6-8; the drain-source breakdown voltage is 40 V minimum.
6 D passive Drain pin, connected together with pins 5 and 7-8.
7 D passive Drain pin, connected together with pins 5-6 and 8.
8 D passive Drain pin, connected together with pins 5-7.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package WSON-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 301 A VGS=10 V, TC=25 °C 3
Continuous drain current ID 213 A VGS=10 V, TC=100 °C 3
Continuous drain current ID 262 A VGS=4.5 V, TC=25 °C 3
Continuous drain current ID 185 A VGS=4.5 V, TC=100 °C 3
Continuous drain current ID 40 A VGS=10 V, TA=25 °C, RthJA=50 K/W 3
Pulsed drain current ID,pulse 1204 A TC=25 °C 3
Avalanche current, single pulse IAS 50 A 3
Avalanche energy, single pulse EAS 330 mJ ID=50 A, RGS=25 Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation Ptot 167 W TC=25 °C 3
Power dissipation Ptot 3 W TA=25 °C, RthJA=50 K/W 3
Operating and storage temperature Tj, Tstg -55 175 °C 3
Thermal resistance, junction-case, bottom RthJC 0.5 0.9 K/W 3
Thermal resistance, junction-case, top RthJC 0.43 0.86 K/W 3
Thermal resistance, junction-ambient RthJA 50 K/W Device on PCB, 6 cm² cooling area 3
Drain-source breakdown voltage V(BR)DSS 40 V VGS=0 V, ID=1 mA 4
Gate threshold voltage VGS(th) 1.2 2 V VDS=VGS, ID=250 μA 4
Zero gate voltage drain current IDSS 0.1 1 μA VDS=40 V, VGS=0 V, Tj=25 °C 4
Zero gate voltage drain current IDSS 10 100 μA VDS=40 V, VGS=0 V, Tj=125 °C 4
Gate-source leakage current IGSS 10 100 nA VGS=20 V, VDS=0 V 4
Drain-source on-state resistance RDS(on) 0.96 1.24 mΩ VGS=4.5 V, ID=50 A 4
Drain-source on-state resistance RDS(on) 0.78 0.94 mΩ VGS=10 V, ID=50 A 4
Gate resistance RG 0.8 1.6 Ω 4
Transconductance gfs 140 280 S /VDS/>2/ID/RDS(on)max, ID=50 A 4
Input capacitance Ciss 6800 9520 pF VGS=0 V, VDS=20 V, f=1 MHz 4
Output capacitance Coss 1900 2660 pF VGS=0 V, VDS=20 V, f=1 MHz 4
Reverse transfer capacitance Crss 160 320 pF VGS=0 V, VDS=20 V, f=1 MHz 4
Turn-on delay time td(on) 10 ns VDD=20 V, VGS=10 V, ID=30 A, RG,ext=1.6 Ω 4
Rise time tr 12 ns VDD=20 V, VGS=10 V, ID=30 A, RG,ext=1.6 Ω 4
Turn-off delay time td(off) 46 ns VDD=20 V, VGS=10 V, ID=30 A, RG,ext=1.6 Ω 4
Fall time tf 9 ns VDD=20 V, VGS=10 V, ID=30 A, RG,ext=1.6 Ω 4
Gate to drain charge Qgd 15 21 nC VDD=20 V, ID=50 A, VGS=0 to 10 V 5
Gate charge total Qg 95 133 nC VDD=20 V, ID=50 A, VGS=0 to 10 V 5
Gate charge total Qg 49 69 nC VDD=20 V, ID=50 A, VGS=0 to 4.5 V 5
Output charge Qoss 84 118 nC VDD=20 V, VGS=0 V 5
Gate to source charge Qgs 16 nC VDD=20 V, ID=50 A, VGS=0 to 10 V 5
Gate charge at threshold Qg(th) 11 nC VDD=20 V, ID=50 A, VGS=0 to 10 V 5
Switching charge Qsw 21 nC VDD=20 V, ID=50 A, VGS=0 to 10 V 5
Gate plateau voltage Vplateau 2.4 V VDD=20 V, ID=50 A, VGS=0 to 10 V 5
Gate charge total, sync. FET Qg(sync) 84 nC VDS=0.1 V, VGS=0 to 10 V 5
Diode continuous forward current IS 160 A TC=25 °C 5
Diode pulse current IS,pulse 1204 A TC=25 °C 5
Diode forward voltage VSD 0.8 1 V VGS=0 V, IF=50 A, Tj=25 °C 5
Reverse recovery time trr 36 72 ns VR=20 V, IF=50A, diF/dt=400 A/μs 5
Reverse recovery charge Qrr 50 nC VR=15 V, IF=IS, diF/dt=400 A/μs 5

CAD (KiCad official)

  • Symbol: BSC009N04LSSCATMA1
  • Footprint: Package_SON:SON-8-1EP_3x2mm_P0.5mm_EP1.4x1.6mm
  • 3D model: WSON-8, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: bsc009n04lsscatma1-etched.step / bsc009n04lsscatma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc009n04lsscatma1.step / bsc009n04lsscatma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (15 pp, sha256 d46fb6d24e01554c, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF