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BS170-D26Z

Public Made by Adom

by adom

onsemi MOSFETs, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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BS170-D26Z

onsemi · MOSFETs · TO-92-3

BS170-D26Z from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain of the N-channel MOSFET; drain-source voltage is rated 60 Vdc maximum and continuous drain current 0.5 Adc.
2 Gate input Gate of the N-channel MOSFET; gate-source voltage is rated ±20 Vdc continuous and ±40 Vpk non-repetitive, with threshold of 0.8 to 3.0 Vdc at 1.0 mAdc.
3 Source passive Source of the N-channel MOSFET, normally connected to the circuit ground or low-side return.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Reverse Current IGSS 0.01 10 nAdc VGS = 15 Vdc, VDS = 0 2
Drain-Source Breakdown Voltage V(BR)DSS 60 90 Vdc VGS = 0, ID = 100 Adc 2
Gate Threshold Voltage VGS(Th) 0.8 2 3 Vdc VDS = VGS, ID = 1.0 mAdc 2
Static Drain-Source On Resistance rDS(on) 1.8 5 Ω VGS = 10 Vdc, ID = 200 mAdc 2
Drain Cutoff Current ID(off) 0.5 A VDS = 25 Vdc, VGS = 0 Vdc 2
Input Capacitance Ciss 60 pF VDS = 10 Vdc, VGS = 0, f = 1.0 MHz 2
Turn-On Time ton 4 10 ns ID = 0.2 Adc, See Figure 1 2
Turn-Off Time toff 4 10 ns ID = 0.2 Adc, See Figure 1 2
Drain-Source Voltage VDS 60 Vdc 1
Gate-Source Voltage, Continuous VGS -20 20 Vdc Continuous 1
Gate-Source Voltage, Non-repetitive VGSM -40 40 Vpk Non-repetitive (tp ≤ 50 s) 1
Drain Current ID 0.5 Adc 1
Total Device Dissipation PD 350 mW TA = 25°C 1
Operating and Storage Junction Temperature Range TJ, Tstg -55 150 °C 1
Forward Transconductance gfs 200 mmhos VDS = 10 Vdc, ID = 250 mAdc 2

CAD (KiCad official)

  • Symbol: BS170-D26Z
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: bs170-d26z-etched.step / bs170-d26z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bs170-d26z.step / bs170-d26z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (4 pp, sha256 63e77cc4ae698d64, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF