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BRMMDT2227WS
Public Made by Adomby adom
Foshan Blue Rocket Elec Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBRMMDT2227WS
Foshan Blue Rocket Elec · Bipolar (BJT) · SOT-363
BRMMDT2227WS from Foshan Blue Rocket Elec, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of transistor 2 per the pinning table; the equivalent circuit shows this pin as the emitter of the NPN device (VEBO 6.0 V, IC 600 mA). |
| 2 | B2 | passive | Base of transistor 2 per the pinning table; the equivalent circuit shows this pin as the base of the NPN device. |
| 3 | C1 | passive | Collector of transistor 1 per the pinning table; the equivalent circuit shows this pin as the collector of the PNP device (VCEO -60 V, IC -600 mA). |
| 4 | E1 | passive | Emitter of transistor 1 per the pinning table; the equivalent circuit shows this pin as the emitter of the PNP device (VEBO -5.0 V). |
| 5 | B1 | passive | Base of transistor 1 per the pinning table; the equivalent circuit shows this pin as the base of the PNP device. |
| 6 | C2 | passive | Collector of transistor 2 per the pinning table; the equivalent circuit shows this pin as the collector of the NPN device (VCEO 40 V, IC 600 mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Total Power Dissipation | Pd | 200 | mW | Total device, TA = 25C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 625 | ℃/W | 2 | |||
| Operating and Storage Temperature Range | Tj, TSTG | -55 | 150 | ℃ | 2 | ||
| Collector to Base Voltage (NPN 2222A) | VCBO | 75 | V | 2 | |||
| Collector to Emitter Voltage (NPN 2222A) | VCEO | 40 | V | 2 | |||
| Emitter to Base Voltage (NPN 2222A) | VEBO | 6 | V | 2 | |||
| Collector Current (NPN 2222A) | IC | 600 | mA | 2 | |||
| Collector to Base Voltage (PNP 2907A) | VCBO | -60 | V | 2 | |||
| Collector to Emitter Voltage (PNP 2907A) | VCEO | -60 | V | 2 | |||
| Emitter to Base Voltage (PNP 2907A) | VEBO | -5 | V | 2 | |||
| Collector Current (PNP 2907A) | IC | -600 | mA | 2 | |||
| Collector-Base Breakdown Voltage (NPN) | VCBO | 75 | V | IC =10μA IE=0 | 3 | ||
| Collector-Emitter Breakdown Voltage (NPN) | VCEO | 40 | V | IC =10mA IB = 0 | 3 | ||
| Emitter-Base Breakdown Voltage (NPN) | VEBO | 6 | V | IE =10μA IC = 0 | 3 | ||
| Collector Cut-Off Current (NPN) | ICEX | 10 | nA | VCE=60V VEB(off)=3V | 3 | ||
| Collector Cut-Off Current (NPN) | ICBO | 0.01 | μA | VCB=60V IE=0 | 3 | ||
| Collector Cut-Off Current (NPN) | ICBO | 10 | μA | VCB=60V IE=0 TA=125℃ | 3 | ||
| Emitter Cut-Off Current (NPN) | IEBO | 10 | nA | VEB=3.0V IC=0 | 3 | ||
| Base Cut-Off Current (NPN) | IBL | 20 | nA | VCE=60V VEB(off)=3V | 3 | ||
| DC Current Gain (NPN) | hFE(1) | 35 | VCE=10V IC=0.1mA | 3 | |||
| DC Current Gain (NPN) | hFE(2) | 50 | VCE=10V IC=1.0mA | 3 | |||
| DC Current Gain (NPN) | hFE(3) | 75 | VCE=10V IC=10mA | 3 | |||
| DC Current Gain (NPN) | hFE(5) | 100 | 300 | VCE=10V IC=150mA | 3 | ||
| DC Current Gain (NPN) | hFE(7) | 40 | VCE=10V IC=500mA | 3 | |||
| Collector-Emitter Saturation Voltage (NPN) | VCE(sat) (1) | 0.3 | V | IC=150mA IB=15mA | 3 | ||
| Collector-Emitter Saturation Voltage (NPN) | VCE(sat) (2) | 1 | V | IC=500mA IB=50mA | 3 | ||
| Base-Emitter Saturation Voltage (NPN) | VBE(sat) (1) | 0.6 | 1.2 | V | IC=150mA IB=15mA | 3 | |
| Base-Emitter Saturation Voltage (NPN) | VBE(sat) (2) | 2 | V | IC=500mA IB=50mA | 3 | ||
| Transition Frequency (NPN) | fT | 300 | MHz | VCE=20V IC=20mA f=100MHz | 3 | ||
| Output Capacitance (NPN) | Cobo | 8 | pF | VCB=10V IE=0 f=1.0MHz | 3 | ||
| Input Capacitance (NPN) | Cibo | 25 | pF | VEB=0.5V IC=0 f=1.0MHz | 3 | ||
| Noise Figure (NPN) | NF | 4 | dB | IC=100μA VCE=10V RS=1.0kΩ f=1.0 kHz | 3 | ||
| Turn-on Time (NPN) | td | 10 | ns | VCC=30V IC=150mA VBE(OFF)=-0.5V IB1=15mA | 3 | ||
| Storage Time (NPN) | ts | 225 | ns | VCC=30V IC=150mA IB1=IB2=15mA | 3 | ||
| Fall Time (NPN) | tf | 60 | ns | 3 | |||
| Collector to Base Breakdown Voltage (PNP) | VCBO | -60 | V | IC=-10μA IE=0 | 4 | ||
| Collector to Emitter Breakdown Voltage (PNP) | VCEO | -60 | V | IC=-10mA IB=0 | 4 | ||
| Emitter to Base Breakdown Voltage (PNP) | VEBO | -5 | V | IE=-10μA IC=0 | 4 | ||
| Collector Cut-Off Current (PNP) | ICBO | -0.01 | μA | VCB=-50V IE=0 | 4 | ||
| Collector Cut-Off Current (PNP) | ICBO | 10 | μA | VCB=-50V IE=0 TA=125℃ | 4 | ||
| Collector Cutoff Current (PNP) | ICEX | -50 | nA | VCE = -30V, VEB(OFF) = -0.5V | 4 | ||
| Base Cutoff Current (PNP) | IBL | -50 | nA | VCE = -30V, VEB(OFF) = -0.5V | 4 | ||
| DC Current Gain (PNP) | hFE(1) | 100 | 300 | VCE=-10V IC=-150mA* | 4 | ||
| DC Current Gain (PNP) | hFE(2) | 50 | VCE=-10V IC=-500mA* | 4 | |||
| DC Current Gain (PNP) | hFE(3) | 100 | VCE=-10V IC=-10mA | 4 | |||
| DC Current Gain (PNP) | hFE(5) | 75 | VCE=-10V IC=-0.1mA | 4 | |||
| Collector-Emitter Saturation Voltage (PNP) | VCE(sat) (1) | -0.4 | V | IC=-150mA IB=-15 mA | 4 | ||
| Collector-Emitter Saturation Voltage (PNP) | VCE(sat) (2) | -1.6 | V | IC=-500mA IB=-50mA | 4 | ||
| Base-Emitter Saturation Voltage (PNP) | VBE(sat) (1) | -1.3 | V | IC=-150mA IB=-15 mA | 4 | ||
| Base-Emitter Saturation Voltage (PNP) | VBE(sat) (2) | -2.6 | V | IC=-500mA IB=-50mA | 4 | ||
| Transition Frequency (PNP) | fT | 200 | MHz | VCE=-20V IC=-50mA f=100MHz | 4 | ||
| Output Capacitance (PNP) | Cobo | 8 | pF | VCB=-10V IE=0 f=1.0MHz | 4 | ||
| Input Capacitance (PNP) | Cibo | 30 | pF | VEB=-2V IC=0 f=1.0MHz | 4 | ||
| Delay Time (PNP) | td | 10 | ns | VCC=-30V IC=-150mA IB1=-15mA | 4 | ||
| Storage Time (PNP) | ts | 80 | ns | VCC=-6V IC=-150mA IB1=IB1=-15mA | 4 | ||
| Fall Time (PNP) | tr | 30 | ns | 4 | |||
| Turn-Off Time (PNP) | toff | 100 | ns | 4 |
CAD (KiCad official)
- Symbol:
BRMMDT2227WS - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
brmmdt2227ws-etched.step/brmmdt2227ws-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);brmmdt2227ws.step/brmmdt2227ws.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256
298ff6d8d73df03e, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).