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BRD7002K2

Foshan Blue Rocket Elec · MOSFETs · SOT-363

BRD7002K2 from Foshan Blue Rocket Elec, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of one N-channel MOSFET; drain-source voltage rated 60 V and continuous drain current 320 mA.
2 G input Gate terminal of one N-channel MOSFET with built-in ESD protection diode; gate-source voltage ±20 V continuous, threshold 1.0 to 2.5 V.
3 D passive Drain terminal of one N-channel MOSFET; VDSS 60 V, continuous ID 320 mA, pulsed IDM 1.5 A.
4 S passive Source terminal of the second N-channel MOSFET; drain-source voltage rated 60 V and continuous drain current 320 mA.
5 G input Gate terminal of the second N-channel MOSFET with built-in ESD protection diode; gate-source voltage ±20 V continuous, threshold 1.0 to 2.5 V.
6 D passive Drain terminal of the second N-channel MOSFET; VDSS 60 V, continuous ID 320 mA, pulsed IDM 1.5 A.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOT-363
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V Ta=25℃ 2
Drain-Gate Voltage VDGR 60 V Ta=25℃ 2
Maximum Drain Current - Continuous ID 320 mA Ta=25℃ 2
Maximum Drain Current - Pulsed IDM 1.5 A Ta=25℃ 2
Gate-Source Voltage - Continuous VGSS -20 20 V Ta=25℃ 2
Maximum Power Dissipation PD 350 mW Ta=25℃ 2
Storage Temperature Range Tstg -55 150 ℃ 2
Junction-to-Ambient Thermal Resistance (Steady State) RθJA 417 ℃/W Steady State; FR4 board 1 sq in pad, 1 oz Cu 2
Junction-to-Ambient Thermal Resistance (t≤5s) RθJA 300 ℃/W t≤5s; FR4 board 1 sq in pad, 1 oz Cu 2
Drain-Source Breakdown Voltage VDSS 60 V VGS=0 ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0 VDS=60V 2
Gate-Source Leakage IGSS -10 10 μA VDS=0V VGS=±20V 2
Static Drain-Source On-Resistance (1) RDS(on)(1) 2.3 Ω VGS=10V ID=0.5A 2
Static Drain-Source On-Resistance (2) RDS(on)(2) 1.7 2.7 Ω VGS=5V ID=0.05A 2
Drain-Source Diode Forward Voltage VSD 1.5 V VGS=0V IS=250mA 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS ID=250uA 2
Input Capacitance Ciss 25 50 pF VGS=0V, f=1MHz, VDS=20V 2
Output Capacitance Coss 11 25 pF VGS=0V, f=1MHz, VDS=20V 2
Reverse Transfer Capacitance Crss 2.5 5 pF VGS=0V, f=1MHz, VDS=20V 2
Forward Transconductance Yfs 80 mS VDS=10V ID=0.2A 2
Total Gate Charge QG(TOT) 0.7 nC VGS=4.5V, VDS=10V; ID=200 mA 2
Threshold Gate Charge QG(TH) 0.1 nC VGS=4.5V, VDS=10V; ID=200 mA 2
Gate-to-Source Charge QGS 0.3 nC VGS=4.5V, VDS=10V; ID=200 mA 2
Gate-to-Drain Charge QGD 0.1 nC VGS=4.5V, VDS=10V; ID=200 mA 2
Turn-On Delay Time td(ON) 12.2 ns VGS=10V, VDD=25V, ID=500mA, RG=25Ω 3
Rise Time tr 9 ns VGS=10V, VDD=25V, ID=500mA, RG=25Ω 3
Turn-Off Delay Time td(OFF) 55.8 ns VGS=10V, VDD=25V, ID=500mA, RG=25Ω 3
Fall Time tf 29 ns VGS=10V, VDD=25V, ID=500mA, RG=25Ω 3

CAD (KiCad official)

  • Symbol: BRD7002K2
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: brd7002k2-etched.step / brd7002k2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brd7002k2.step / brd7002k2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256 51469ca10a360e7c, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF