component
BRCS9435SC
Public Made by Adomby adom
Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| brcs9435sc-etched.glb | 17d ago |
| brcs9435sc-etched.step | 17d ago |
| brcs9435sc-hero.glb | 17d ago |
| brcs9435sc-hero.overlay.json | 17d ago |
| brcs9435sc.glb | 17d ago |
| brcs9435sc.kicad_mod | 17d ago |
| brcs9435sc.kicad_sym | 17d ago |
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| package.json | 17d ago |
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| README.md | 17d ago |
BRCS9435SC
Foshan Blue Rocket Elec · MOSFETs · SOP-8
BRCS9435SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the datasheet lists PIN1, PIN2 and PIN3 together as S, with absolute maximum VDSS of -30 V and continuous drain current of -5.3 A (note 1a). |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the datasheet lists PIN1, PIN2 and PIN3 together as S, with absolute maximum VDSS of -30 V and continuous drain current of -5.3 A (note 1a). |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the datasheet lists PIN1, PIN2 and PIN3 together as S, with absolute maximum VDSS of -30 V and continuous drain current of -5.3 A (note 1a). |
| 4 | G | input | Gate terminal of the P-channel MOSFET; the absolute maximum gate-source voltage VGS is ±20 V and the gate threshold VGS(th) is -1.0 V min to -3.0 V max at ID = -250 μA. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet lists PIN5 through PIN8 together as D, with absolute maximum VDSS of -30 V and continuous drain current of -5.3 A (note 1a). |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet lists PIN5 through PIN8 together as D, with absolute maximum VDSS of -30 V and continuous drain current of -5.3 A (note 1a). |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet lists PIN5 through PIN8 together as D, with absolute maximum VDSS of -30 V and continuous drain current of -5.3 A (note 1a). |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet lists PIN5 through PIN8 together as D, with absolute maximum VDSS of -30 V and continuous drain current of -5.3 A (note 1a). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (absolute maximum rating) | VDSS | -30 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Drain Current, Continuous | ID | -5.3 | A | note 1a | 2 | ||
| Drain Current, Pulsed | ID | -50 | A | Pulsed | 2 | ||
| Power Dissipation for Single Operation | PD | 2.5 | W | note 1a | 2 | ||
| Power Dissipation for Single Operation | PD | 1.2 | W | note 1b | 2 | ||
| Power Dissipation for Single Operation | PD | 1 | W | note 1c | 2 | ||
| Operating and Junction Temperature Range | Tj Tstg | -55 | 175 | ℃ | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | ℃/W | note 1a | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 105 | ℃/W | note 1b | 3 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 125 | ℃/W | note 1c | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 25 | ℃/W | note 1 | 2 | ||
| Drain-Source Breakdown Voltage | VDSS | -30 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-24V VGS=0V | 2 | ||
| Gate-Body Leakage Current, Forward | IGSS | 100 | nA | VGS=20V VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -3 | V | VDS=VGS ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 42 | 50 | mΩ | VGS=-10V ID=-5.3A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 65 | 80 | mΩ | VGS=-4.5V ID=-4A | 2 | |
| Static Drain-Source On-Resistance, TJ=125°C | RDS(on) | 57 | 77 | mΩ | VGS=-10 V ID=-5.3A TJ=125°C | 2 | |
| On-State Drain Current | ID(on) | -25 | A | VGS=-10V VDS=-5V | 2 | ||
| Total Gate Charge | Qg | 10 | 14 | nC | VDS=-15V ID=-4A VGS=-10V | 3 | |
| Turn-On Delay Time | td(on) | 7 | 14 | ns | VDD=-15V ID=-1A VGS=-10 V RGEN=6W | 3 | |
| Turn-On Rise Time | tr | 13 | 24 | ns | VDD=-15V ID=-1A VGS=-10 V RGEN=6W | 3 | |
| Turn-Off Delay Time | td(off) | 14 | 25 | ns | VDD=-15V ID=-1A VGS=-10 V RGEN=6W | 3 | |
| Turn-Off Fall Time | tf | 9 | 17 | ns | VDD=-15V ID=-1A VGS=-10 V RGEN=6W | 3 | |
| Continuous Drain-Source Diode Forward Current | IS | -2.1 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V IS=-2.1A(Note2) | 3 |
CAD (KiCad official)
- Symbol:
BRCS9435SC - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
brcs9435sc-etched.step/brcs9435sc-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);brcs9435sc.step/brcs9435sc.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256
fcf95a48d0fff699, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).