component

BRCS800P06SC

Public Made by Adom

by adom

Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BRCS800P06SC

Foshan Blue Rocket Elec · MOSFETs · SOP-8

BRCS800P06SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET, connected internally to the source of the equivalent circuit (PIN1: S).
2 S passive Source terminal of the P-channel MOSFET, connected internally to the source of the equivalent circuit (PIN2: S).
3 S passive Source terminal of the P-channel MOSFET, connected internally to the source of the equivalent circuit (PIN3: S).
4 G input Gate terminal of the P-channel MOSFET; gate-body voltage limited to ±20 V (VGSS).
5 D passive Drain terminal of the P-channel MOSFET; drain-source voltage rated -60 V (VDSS).
6 D passive Drain terminal of the P-channel MOSFET; drain-source voltage rated -60 V (VDSS).
7 D passive Drain terminal of the P-channel MOSFET; drain-source voltage rated -60 V (VDSS).
8 D passive Drain terminal of the P-channel MOSFET; drain-source voltage rated -60 V (VDSS).

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -60 -71 V VGS=0V ID=-250μA 2
Gate Threshold Voltage VGS(th) -1 -2.1 -3 V VDS=VGS ID=-250μA 2
Static Drain-Source On-Resistance RDS(on) 61 80 mΩ VGS=-10V ID=-2A 2
Static Drain-Source On-Resistance RDS(on) 77 120 mΩ VGS=-4.5V ID=-1A 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-60V VGS=0V 2
Gate-Body Leakage IGSS -100 nA VGS=-20V 2
Gate-Body Leakage IGSS 100 nA VGS=20V 2
Drain-Source Diode Forward Voltage VSD -1.2 V VGS=0V IS=-1A TJ=25℃ 2
Drain-Source Voltage VDSS -60 V 2
Gate-Body Leakage Voltage VGSS -20 20 V 2
Drain Current - Continuous ID -6 A 2
Power Dissipation PD 5.3 W Surface Mounted on FR4 Board, t ≤ 10 sec. 2
Operating and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Maximum Junction-to-Ambient RθJA 40 ℃/W t ≤ 10s 2
Maximum Junction-to-Ambient Steady-State 75 ℃/W Steady-State 2
Maximum Junction-to-Lead Steady-State RθJL 23.5 ℃/W Steady-State 2

CAD (KiCad official)

  • Symbol: BRCS800P06SC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: brcs800p06sc-etched.step / brcs800p06sc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs800p06sc.step / brcs800p06sc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (7 pp, sha256 78943a643fcc58f8, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF