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BRCS50N06RA

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by adom

Foshan Blue Rocket Elec MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BRCS50N06RA

Foshan Blue Rocket Elec · MOSFETs · TO-220

BRCS50N06RA from Foshan Blue Rocket Elec, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V (VGS).
2 D passive Drain terminal of the N-channel MOSFET, with drain-source voltage rated at 60 V (VDSS) and drain current of 50 A at Tc=25℃.
3 S passive Source terminal of the N-channel MOSFET, serving as the reference for the gate-source voltage rating.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 2
Drain Current ID 50 A Tc=25℃ 2
Drain Current - Pulsed IDM 200 A 2
Gate-Source Voltage VGS -20 20 V 2
Avalanche Current IAS 20 A 2
Single Pulsed Avalanche Energy EAS 170 mJ 2
Power Dissipation PD 75 W Tc=25℃ 2
Storage Temperature Range Tstg -55 150 ℃ 2
Thermal Resistance Junction to Ambient RθJA 12.5 ℃/W t ≤ 10s 2
Thermal Resistance Junction to Ambient RθJA 51 ℃/W Steady-State 2
Thermal Resistance Junction to Case RθJC 1.7 ℃/W Steady-State 2
Drain-Source Breakdown Voltage BVDSS 60 66 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V VGS=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=48V TC=150℃ 2
Gate-Body Leakage Current Forward IGSS -0.1 0.1 μA VGS=±20V VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.7 3 V VDS=VGS ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 11.8 15 mΩ VGS=10V ID=25A 2
Static Drain-Source On-Resistance RDS(on) 15.5 20 mΩ VGS=4.5V ID=18A 2
Total Gate Charge Qg(10V) 47.5 68 nC VGS=10V VDS=30V ID=20A 2
Total Gate Charge Qg(4.5V) 24 35 nC VGS=10V VDS=30V ID=20A 2
Drain-Source Diode Forward Voltage VSD 1.25 V VGS=0V IS=25A 2
Gate resistance Rg 1.49 Ω VGS=0V VDS=0V, f=1MHz 2
Input Capacitance Ciss 2640 pF VDS=25V VGS=0V f=1.0MHz 2
Output Capacitance Coss 128 pF VDS=25V VGS=0V f=1.0MHz 2
Reverse Transfer Capacitance Crss 115 pF VDS=25V VGS=0V f=1.0MHz 2
Gate Source Charge Qgs 6 nC VGS=10V VDS=30V ID=20A 2
Gate Drain Charge Qgd 14.5 nC VGS=10V VDS=30V ID=20A 2
Turn-On Delay Time td(on) 8 ns VGS=10V VDS=30V RL=1.5Ω RGEN=3Ω 3
Turn-On Rise Time tr 5 ns VGS=10V VDS=30V RL=1.5Ω RGEN=3Ω 3
Turn-Off Delay Time td(off) 30 ns VGS=10V VDS=30V RL=1.5Ω RGEN=3Ω 3
Turn-Off Fall Time tf 5.5 ns VGS=10V VDS=30V RL=1.5Ω RGEN=3Ω 3

CAD (KiCad official)

  • Symbol: BRCS50N06RA
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: brcs50n06ra-etched.step / brcs50n06ra-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs50n06ra.step / brcs50n06ra.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256 104cf4da14534cfc, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF