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BRCS4N10TA

Public Made by Adom

by adom

Foshan Blue Rocket Elec MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BRCS4N10TA

Foshan Blue Rocket Elec · MOSFETs · SOT-89

BRCS4N10TA from Foshan Blue Rocket Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet limits VGS to ±20 V (absolute maximum rating).
2 D passive Drain of the N-channel MOSFET; the datasheet rates VDS at 100 V and continuous drain current ID at 4 A (pulsed IDM 16 A).
3 S passive Source of the N-channel MOSFET; the datasheet gives no source-specific limit beyond the device ratings (VDS 100 V, VGS ±20 V).

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V Ta=25℃ 2
Continuous Drain Current ID 4 A Ta=25℃ 2
Pulsed Drain Current IDM 16 A Ta=25℃ 2
Gate-Source Voltage VGS -20 20 V Ta=25℃ 2
Total Power Dissipation PD 2 W Ta=25℃ 2
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 2
Maximum Junction-to-Ambient RθJA 62.5 ℃/W t ≤ 10s 2
Maximum Junction-to-Ambient Steady-State 87 ℃/W 2
Maximum Junction-to-Lead Steady-State RθJL 55.5 ℃/W 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V VGS=0V 2
Zero Gate Voltage Drain Current (TJ=55℃) IDSS 5 μA VDS=100V VGS=0V TJ=55℃ 2
Gate-Body Leakage IGSS -0.1 0.1 μA VGS=±20V VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VDS=VGS ID=250μA 2
Static Drain-Source On-Resistance RDS(on)(1) 107 115 mΩ VGS=10V ID=1A 2
Static Drain-Source On-Resistance RDS(on)(2) 140 150 mΩ VGS=4.5V ID=1A 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS=0V IS=1A 2
Input Capacitance Ciss 190 pF VDS=25V VGS=0V f=1MHz 3
Output Capacitance Coss 155 pF 3
Reverse Transfer Capacitance Crss 28 pF 3
Gate resistance Rg 0.8 Ω VGS=0V VDS=0V f=1MHz 3
Total Gate Charge Qg(10V) 3.8 nC VGS=10V, VDS=50V, ID=4A 3
Total Gate Charge Qg(4.5V) 1.8 nC 3
Gate Source Charge Qgs 0.8 nC 3
Gate Drain Charge Qgd 0.8 nC 3
Turn-On Delay Time td(on) 5 ns VGS=10V RL=25Ω VDS=50V RGEN=3Ω 3
Turn-On Rise Time tr 3 ns 3
Turn-Off Delay Time td(off) 19 ns 3
Turn-Off Fall Time tf 3 ns 3

CAD (KiCad official)

  • Symbol: BRCS4N10TA
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: brcs4n10ta-etched.step / brcs4n10ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs4n10ta.step / brcs4n10ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256 21a8c601ece91398, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF