component
BRCS4620SC
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Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BRCS4620SC
Foshan Blue Rocket Elec · MOSFETs · SOP-8
BRCS4620SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the N-channel MOSFET (channel 1); the datasheet gives no pin-specific limit, only device ratings such as VDSS ±30 V and VGSS ±20 V. |
| 2 | G1 | input | Gate terminal of the N-channel MOSFET (channel 1); the datasheet gives no pin-specific limit, only device ratings such as VGSS ±20 V. |
| 3 | S2 | passive | Source terminal of the P-channel MOSFET (channel 2); the datasheet gives no pin-specific limit, only device ratings such as VDSS ±30 V and VGSS ±20 V. |
| 4 | G2 | input | Gate terminal of the P-channel MOSFET (channel 2); the datasheet gives no pin-specific limit, only device ratings such as VGSS ±20 V. |
| 5 | D2 | passive | Drain terminal of the P-channel MOSFET (channel 2); pins 5 and 6 are both internally D2 per the datasheet pinning. |
| 6 | D2 | passive | Drain terminal of the P-channel MOSFET (channel 2); pins 5 and 6 are both internally D2 per the datasheet pinning. |
| 7 | D1 | passive | Drain terminal of the N-channel MOSFET (channel 1); pins 7 and 8 are both internally D1 per the datasheet pinning. |
| 8 | D1 | passive | Drain terminal of the N-channel MOSFET (channel 1); pins 7 and 8 are both internally D1 per the datasheet pinning. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | 30 | V | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (N-channel) | ID | 7.2 | A | TA=25℃ | 2 | ||
| Continuous Drain Current (P-channel) | ID | -7 | A | TA=25℃ | 2 | ||
| Pulsed Drain Current | IDM | -40 | 40 | A | 2 | ||
| Power Dissipation | PD | 2 | W | TA=25℃ | 2 | ||
| Junction-to-Ambient thermal resistance | RθJA | 62.5 | ℃/W | t≤10s | 2 | ||
| Junction-to-Ambient thermal resistance | RθJA | 90 | ℃/W | Steady-State | 2 | ||
| Junction-to-Lead thermal resistance | RθJL | 40 | ℃/W | Steady-State | 2 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 2 | ||
| N-ch Drain-Source Breakdown Voltage | BVDSS | 30 | 32 | V | VGS=0V ID=250μA | 3 | |
| N-ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V VGS=0V | 3 | ||
| N-ch Gate-Body Leakage Current | IGSS | 100 | nA | VGS=±20V VDS=0V | 3 | ||
| N-ch Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VDS=VGS ID=250μA | 3 |
| N-ch Static Drain-Source On-Resistance | RDS(on) | 21 | 25 | mΩ | VGS=10V ID=7.2A | 3 | |
| N-ch Static Drain-Source On-Resistance | RDS(on) | 29 | 35 | mΩ | VGS=4.5V ID=5.0A | 3 | |
| N-ch Diode Forward Voltage | VSD | 1 | V | VGS=0V IS=1.0A | 3 | ||
| P-ch Drain-Source Breakdown Voltage | BVDSS | -30 | -33 | V | VGS=0V ID=-250μA | 6 | |
| P-ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-24V VGS=0V | 6 | ||
| P-ch Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V VDS=0V | 6 | |
| P-ch Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS ID=-250μA | 6 |
| P-ch Static Drain-Source On-Resistance | RDS(on) | 22 | 25 | mΩ | VGS=-10V ID=-7.0A | 6 | |
| P-ch Static Drain-Source On-Resistance | RDS(on) | 30 | 35 | mΩ | VGS=-4.5V ID=-5.0A | 6 | |
| P-ch Diode Forward Voltage | VSD | -1 | V | VGS=0V IS=-1.0A | 6 |
CAD (KiCad official)
- Symbol:
BRCS4620SC - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
brcs4620sc-etched.step/brcs4620sc-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);brcs4620sc.step/brcs4620sc.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (11 pp, sha256
b2154e095e0e2c11, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BRCS4620SC
**Foshan Blue Rocket Elec** · MOSFETs · SOP-8
BRCS4620SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the N-channel MOSFET (channel 1); the datasheet gives no pin-specific limit, only device ratings such as VDSS ±30 V and VGSS ±20 V. |
| 2 | G1 | input | Gate terminal of the N-channel MOSFET (channel 1); the datasheet gives no pin-specific limit, only device ratings such as VGSS ±20 V. |
| 3 | S2 | passive | Source terminal of the P-channel MOSFET (channel 2); the datasheet gives no pin-specific limit, only device ratings such as VDSS ±30 V and VGSS ±20 V. |
| 4 | G2 | input | Gate terminal of the P-channel MOSFET (channel 2); the datasheet gives no pin-specific limit, only device ratings such as VGSS ±20 V. |
| 5 | D2 | passive | Drain terminal of the P-channel MOSFET (channel 2); pins 5 and 6 are both internally D2 per the datasheet pinning. |
| 6 | D2 | passive | Drain terminal of the P-channel MOSFET (channel 2); pins 5 and 6 are both internally D2 per the datasheet pinning. |
| 7 | D1 | passive | Drain terminal of the N-channel MOSFET (channel 1); pins 7 and 8 are both internally D1 per the datasheet pinning. |
| 8 | D1 | passive | Drain terminal of the N-channel MOSFET (channel 1); pins 7 and 8 are both internally D1 per the datasheet pinning. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | | 30 | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current (N-channel) | ID | | | 7.2 | A | TA=25℃ | 2 |
| Continuous Drain Current (P-channel) | ID | -7 | | | A | TA=25℃ | 2 |
| Pulsed Drain Current | IDM | -40 | | 40 | A | | 2 |
| Power Dissipation | PD | | | 2 | W | TA=25℃ | 2 |
| Junction-to-Ambient thermal resistance | RθJA | | | 62.5 | ℃/W | t≤10s | 2 |
| Junction-to-Ambient thermal resistance | RθJA | | | 90 | ℃/W | Steady-State | 2 |
| Junction-to-Lead thermal resistance | RθJL | | | 40 | ℃/W | Steady-State | 2 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 2 |
| N-ch Drain-Source Breakdown Voltage | BVDSS | 30 | 32 | | V | VGS=0V ID=250μA | 3 |
| N-ch Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V VGS=0V | 3 |
| N-ch Gate-Body Leakage Current | IGSS | | | 100 | nA | VGS=±20V VDS=0V | 3 |
| N-ch Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VDS=VGS ID=250μA | 3 |
| N-ch Static Drain-Source On-Resistance | RDS(on) | | 21 | 25 | mΩ | VGS=10V ID=7.2A | 3 |
| N-ch Static Drain-Source On-Resistance | RDS(on) | | 29 | 35 | mΩ | VGS=4.5V ID=5.0A | 3 |
| N-ch Diode Forward Voltage | VSD | | | 1 | V | VGS=0V IS=1.0A | 3 |
| P-ch Drain-Source Breakdown Voltage | BVDSS | -30 | -33 | | V | VGS=0V ID=-250μA | 6 |
| P-ch Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-24V VGS=0V | 6 |
| P-ch Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V VDS=0V | 6 |
| P-ch Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS ID=-250μA | 6 |
| P-ch Static Drain-Source On-Resistance | RDS(on) | | 22 | 25 | mΩ | VGS=-10V ID=-7.0A | 6 |
| P-ch Static Drain-Source On-Resistance | RDS(on) | | 30 | 35 | mΩ | VGS=-4.5V ID=-5.0A | 6 |
| P-ch Diode Forward Voltage | VSD | | | -1 | V | VGS=0V IS=-1.0A | 6 |
## CAD (KiCad official)
- Symbol: `BRCS4620SC`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `brcs4620sc-etched.step` / `brcs4620sc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `brcs4620sc.step` / `brcs4620sc.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Foshan Blue Rocket Elec datasheet](docs/brcs4620sc-datasheet.pdf) (11 pp, sha256 `b2154e095e0e2c11`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/brcs4620sc-datasheet.pdf)