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BRCS4606SC

Public Made by Adom

by adom

Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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BRCS4606SC

Foshan Blue Rocket Elec · MOSFETs · SOP-8

BRCS4606SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of the N-channel MOSFET (Q2), rated for 6.9A continuous drain current at TA=25℃.
2 G2 input Gate of the N-channel MOSFET (Q2), with absolute maximum VGSS of ±12V and threshold of 0.65 to 1.3V.
3 S1 passive Source of the P-channel MOSFET (Q1), rated for -6.0A continuous drain current at TA=25℃.
4 G1 input Gate of the P-channel MOSFET (Q1), with absolute maximum VGSS of ±12V and threshold of -0.5 to -1.3V.
5 D1 passive Drain of the P-channel MOSFET (Q1), with VDSS of -30V; tied to pin 6.
6 D1 passive Drain of the P-channel MOSFET (Q1), with VDSS of -30V; tied to pin 5.
7 D2 passive Drain of the N-channel MOSFET (Q2), with VDSS of 30V; tied to pin 8.
8 D2 passive Drain of the N-channel MOSFET (Q2), with VDSS of 30V; tied to pin 7.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOP-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V N-channel (P-channel -30) 2
Drain-Source Voltage P-ch VDSS -30 V P-channel 2
Gate-Source Voltage VGSS -12 12 V 2
Continuous Drain Current N-ch ID 6.9 A N-channel, TA=25℃ 2
Continuous Drain Current N-ch ID 5.8 A N-channel, TA=70℃ 2
Continuous Drain Current P-ch ID -6 A P-channel, TA=25℃ 2
Continuous Drain Current P-ch ID -5 A P-channel, TA=70℃ 2
Pulsed Drain Current IDM -30 30 A 2
Power Dissipation PD 2 W TA=25℃ 2
Power Dissipation PD 1.44 W TA=70℃ 2
Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Junction-to-Ambient RθJA 62.5 ℃/W t≤10s 2
Junction-to-Ambient RθJA 110 ℃/W 2
Junction-to-Lead RθJL 60 ℃/W printed '60 4' 2
N-ch Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 3
N-ch Zero Gate Voltage Drain Current IDSS 1 μA VDS=24V VGS=0V 3
N-ch Zero Gate Voltage Drain Current IDSS 5 μA VDS=24V VGS=0V TJ=55℃ 3
N-ch Gate-Body leakage current IGSS 100 nA VGS=±12V VDS=0V 3
N-ch Gate Threshold Voltage VGS(th) 0.65 1.3 V VDS=VGS ID=250μA 3
N-ch On state drain current ID(on) 6.9 A VDS=4.5V VGS=5.0V 3
N-ch Static Drain-Source On-Resistance RDS(on) 24 32 mΩ VGS=10V ID=6.9A 3
N-ch Static Drain-Source On-Resistance RDS(on) 32.3 38 mΩ VGS=10V ID=6.9A TJ=125℃ 3
N-ch Static Drain-Source On-Resistance RDS(on) 27 36 mΩ VGS=4.5V ID=5.0A 3
N-ch Diode Forward Voltage VSD 0.76 1 V VGS=0V IS=1.0A 3
N-ch Forward Transconductance gFS 9 S VDS=5.0V ID=5.0A 3
N-ch Input Capacitance Ciss 680 pF VDS=15V VGS=0V f=1.0MHz 3
N-ch Output Capacitance Coss 102 pF VDS=15V VGS=0V f=1.0MHz 3
N-ch Reverse Transfer Capacitance Crss 77 pF VDS=15V VGS=0V f=1.0MHz 3
N-ch Gate resistance Rg 3 Ω VDS=0V VGS=0V f=1.0MHz 3
P-ch Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=-250μA 6
P-ch Zero Gate Voltage Drain Current IDSS -1 μA VDS=-24V VGS=0V 6
P-ch Zero Gate Voltage Drain Current IDSS -5 μA VDS=-24V VGS=0V TJ=55℃ 6
P-ch Gate-Body leakage current IGSS 100 nA VGS=±12V VDS=0V 6
P-ch Gate Threshold Voltage VGS(th) -0.5 -0.7 -1.3 V VDS=VGS ID=-250μA 6
P-ch On state drain current ID(on) 6 A VDS=-4.5V VGS=-5.0V 6
P-ch Static Drain-Source On-Resistance RDS(on) 52 65 mΩ VGS=-10V ID=-6.0A 6
P-ch Static Drain-Source On-Resistance RDS(on) 57 86 mΩ VGS=-10V ID=-6.0A TJ=125℃ 6
P-ch Static Drain-Source On-Resistance RDS(on) 59 75 mΩ VGS=-4.5V ID=-5.0A 6
P-ch Diode Forward Voltage VSD -0.76 -1 V VGS=0V IS=-1.0A 6
P-ch Forward Transconductance gFS 12 S VDS=-5.0V ID=-5.0A 6
P-ch Input Capacitance Ciss 920 pF VDS=-15V VGS=0V f=1.0MHz 6
P-ch Output Capacitance Coss 190 pF VDS=-15V VGS=0V f=1.0MHz 6
P-ch Reverse Transfer Capacitance Crss 122 pF VDS=-15V VGS=0V f=1.0MHz 6
P-ch Gate resistance Rg 3.6 Ω VDS=0V VGS=0V f=1.0MHz 6

CAD (KiCad official)

  • Symbol: BRCS4606SC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: brcs4606sc-etched.step / brcs4606sc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs4606sc.step / brcs4606sc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (11 pp, sha256 8c338c493a76e211, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF