component

BRCS4435SC

Public Made by Adom

by adom

Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 29d ago
viewers brcs4435sc: viewers · Ray 29d ago
brcs4435sc-etched.glb brcs4435sc: factory component page (tier=lcsc) · Ray 29d ago
brcs4435sc-etched.step brcs4435sc: factory component page (tier=lcsc) · Ray 29d ago
brcs4435sc-hero.glb brcs4435sc: hero GLB from the etched model (keeps the MPN mark) · Ray 29d ago
brcs4435sc-hero.overlay.json Publish 0.1.0 · Ray 29d ago
brcs4435sc.glb Publish 0.1.0 · Ray 29d ago
brcs4435sc.kicad_mod Publish 0.1.0 · Ray 29d ago
brcs4435sc.kicad_sym Publish 0.1.0 · Ray 29d ago
brcs4435sc.lbr Publish 0.1.0 · Ray 29d ago
brcs4435sc.step Publish 0.1.0 · Ray 29d ago
package.json Publish 0.1.0 · Ray 29d ago
page.json brcs4435sc: specified limits as data (metadata.characteristics, 29 rows from the datasheet) · Ray 23d ago
README.md brcs4435sc: specified limits as data (metadata.characteristics, 29 rows from the datasheet) · Ray 23d ago

BRCS4435SC

Foshan Blue Rocket Elec · MOSFETs · SOP-8

BRCS4435SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; pins 1 to 3 are all source and should be connected together.
2 S passive Source terminal of the P-channel MOSFET; pins 1 to 3 are all source and should be connected together.
3 S passive Source terminal of the P-channel MOSFET; pins 1 to 3 are all source and should be connected together.
4 G input Gate terminal of the P-channel MOSFET; the datasheet gives a gate-source voltage rating of ±20 V.
5 D passive Drain terminal of the P-channel MOSFET; pins 5 to 8 are all drain and should be connected together, with a drain-source voltage rating of -30 V.
6 D passive Drain terminal of the P-channel MOSFET; pins 5 to 8 are all drain and should be connected together, with a drain-source voltage rating of -30 V.
7 D passive Drain terminal of the P-channel MOSFET; pins 5 to 8 are all drain and should be connected together, with a drain-source voltage rating of -30 V.
8 D passive Drain terminal of the P-channel MOSFET; pins 5 to 8 are all drain and should be connected together, with a drain-source voltage rating of -30 V.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID -8.8 A Ta=25°C 2
Continuous Drain Current ID -7 A Ta=70°C 2
Pulsed Drain Current IDM -50 A Repetitive rating, pulse width limited by junction temperature 2
Power Dissipation for Single Operation PD 2.5 W Single operation, Ta=25℃ 2
Power Dissipation for Single Operation PD 1.2 W Single operation, Ta=70℃ 2
Avalanche Current IAR -20 A 2
Repetitive avalanche energy EAR 50 mJ 0.3 mH 2
Maximum Junction Temperature Tj 150 ℃ 2
Storage Temperature Range Tstg -55 150 ℃ 2
Thermal Resistance-Junction to Ambient RθJA 50 /W ℃ See Note A: 1 in² FR-4 board, 2oz Cu, still air, TA=25°C 2
Thermal Resistance-Junction to Ambient RθJA 125 /W ℃ See Note A: 1 in² FR-4 board, 2oz Cu, still air, TA=25°C 2
Maximum Junction-to-Lead RθJL 25 /W ℃ 2
Drain-Source Breakdown Voltage BVDSS -30 V ID=-250μA VGS=0V 3
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V VGS=0V 3
Zero Gate Voltage Drain Current IDSS -5 μA VDS=-30V VGS=0V, TJ=55°C 3
Gate-Body leakage current IGSS -100 100 nA VDS=0V VGS=±20V 3
Gate Threshold Voltage VGS(th) -1 -1.7 -3 V VDS=VGS ID=-250μA 3
Static Drain-Source On-Resistance RDS(ON) 18 23 mΩ VGS=-10V ID=-8.8A 3
Static Drain-Source On-Resistance RDS(ON) 25 32 mΩ VGS=-10V ID=-8.8A, TJ=125°C 3
Static Drain-Source On-Resistance RDS(ON) 27 35 mΩ VGS=-4.5V ID=-6.7A 3
Diode Forward Voltage VSD -0.73 -1.2 V IS=-2.1A VGS=0V 3
Maximum Body-Diode Continuous Current IS -2.1 A 3
Total Gate Charge Qg 17 24 nC VGS=-5V VDS=-15V ID=-8.8A 3
Turn-on Delay Time td(ON) 13 23 ns VGS=-10V VDS=-15V ID=-1A RGEN=6Ω 3
Turn-on Rise Time tr 13.5 24 ns VGS=-10V VDS=-15V ID=-1A RGEN=6Ω 3
Turn-off Delay Time td(OFF) 42 68 ns VGS=-10V VDS=-15V ID=-1A RGEN=6Ω 3
Turn-off Fall Time tf 25 40 ns VGS=-10V VDS=-15V ID=-1A RGEN=6Ω 3

CAD (KiCad official)

  • Symbol: BRCS4435SC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: brcs4435sc-etched.step / brcs4435sc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs4435sc.step / brcs4435sc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (9 pp, sha256 9558cffa8d8aa63b, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF