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BRCS4354SC

Foshan Blue Rocket Elec · MOSFETs · SOP-8

BRCS4354SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (VDS=30V, ID=23A).
2 S passive Source terminal of the N-channel MOSFET (VDS=30V, ID=23A).
3 S passive Source terminal of the N-channel MOSFET (VDS=30V, ID=23A).
4 G input Gate terminal; absolute maximum VGS is ±20V with RDS(on) ≤5.5mΩ at VGS=10V.
5 D passive Drain terminal; VDS maximum 30V, continuous drain current 23A at TC=25℃.
6 D passive Drain terminal; VDS maximum 30V, continuous drain current 23A at TC=25℃.
7 D passive Drain terminal; VDS maximum 30V, continuous drain current 23A at TC=25℃.
8 D passive Drain terminal; VDS maximum 30V, continuous drain current 23A at TC=25℃.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V VGS=0V 2
Gate-Body Leakage Current Forward IGSS -100 100 nA VGS=±20V VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.5 V VDS=VGS ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 4.3 5.5 mΩ VGS=10V ID=20A 2
Static Drain-Source On-Resistance RDS(on) 5.5 7 mΩ VGS=4.5V ID=12A 2
Forward Transconductance gFS 30 S VDS=25V ID=10A 2
Diode Forward Voltage VSD 0.7 1.2 V IS=1A VGS=0V 2
Total Gate Charge (10V) Qg(10V) 36 49 nC VGS=10V ID=20A VDS=15V 3
Total Gate Charge (4.5V) Qg(4.5V) 17 23 nC VGS=10V ID=20A VDS=15V 3
Drain-Source Voltage VDS 30 V Ta=25℃ 2
Gate-Source Voltage VGS -20 20 V Ta=25℃ 2
Continuous Drain Current ID 23 A TC=25℃ 2
Pulsed Drain Current IDM 120 A Pulse width ≤ 300μs, Duty cycle ≤ 2% 2
Avalanche Current IAS 30 A 2
Avalanche energy EAS 70 mJ 2
Power Dissipation PD 5 W TC=25℃ 2
Operating and Junction Temperature Range Tj Tstg -55 150 ℃ 2
Thermal resistance, junction - ambient RθJA 75 / W ℃ 2
Thermal resistance, junction - case RθJC 25 / W ℃ 2
Input Capacitance Ciss 4000 pF VDS=25V VGS=0V f=1.0MHz 3
Output Capacitance Coss 420 pF VDS=25V VGS=0V f=1.0MHz 3
Reverse Transfer Capacitance Crss 280 pF VDS=25V VGS=0V f=1.0MHz 3
Gate resistance Rg 0.55 Ω f=1.0MHz 3
Gate-Source Charge Qgs 6 nC VGS=10V ID=20A VDS=15V 3
Gate-Drain Charge Qgd 8 nC VGS=10V ID=20A VDS=15V 3
Turn-On Delay Time td(on) 7.5 ns VGS=10V VDS=15V RL=0.75Ω RGEN=3.0Ω 3
Turn-On Rise Time tr 4 ns VGS=10V VDS=15V RL=0.75Ω RGEN=3.0Ω 3
Turn-Off Delay Time td(off) 37 ns VGS=10V VDS=15V RL=0.75Ω RGEN=3.0Ω 3
Turn-Off Fall Time tf 7.5 ns VGS=10V VDS=15V RL=0.75Ω RGEN=3.0Ω 3
Body Diode Reverse Recovery Time trr 14 ns IF=20A dI/dt=500A/μs 3
Body Diode Reverse Recovery Charge Qrr 20.3 nC IF=20A dI/dt=500A/μs 3

CAD (KiCad official)

  • Symbol: BRCS4354SC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: brcs4354sc-etched.step / brcs4354sc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs4354sc.step / brcs4354sc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256 73984be816c03852, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF