# BRCS4294SC

**Foshan Blue Rocket Elec** · MOSFETs · SOP-8

BRCS4294SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (pins 1, 2, 3 are all source); VDS max 100 V, continuous drain current 11.5 A at TA=25℃. |
| 2 | S | passive | Source of the N-channel MOSFET (pins 1, 2, 3 are all source); VDS max 100 V, continuous drain current 11.5 A at TA=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET (pins 1, 2, 3 are all source); VDS max 100 V, continuous drain current 11.5 A at TA=25℃. |
| 4 | G | input | Gate of the N-channel MOSFET; gate-source voltage limit ±20 V, threshold VGS(th) 1.0 V min to 2.5 V max at ID=250μA. |
| 5 | D | passive | Drain of the N-channel MOSFET (pins 5, 6, 7, 8 are all drain); VDS max 100 V, pulsed drain current 46 A. |
| 6 | D | passive | Drain of the N-channel MOSFET (pins 5, 6, 7, 8 are all drain); VDS max 100 V, pulsed drain current 46 A. |
| 7 | D | passive | Drain of the N-channel MOSFET (pins 5, 6, 7, 8 are all drain); VDS max 100 V, pulsed drain current 46 A. |
| 8 | D | passive | Drain of the N-channel MOSFET (pins 5, 6, 7, 8 are all drain); VDS max 100 V, pulsed drain current 46 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | μA | VDS=100V VGS=0V TJ=55℃ | 2 |
| Gate-Body Leakage Current Forward | IGSS |  |  | 100 | nA | VGS=20V VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 2.5 | V | VDS=VGS ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 10 | 12 | mΩ | VGS=10V ID=11.5A | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 21 |  | mΩ | VGS=10V ID=11.5A TJ=125℃ | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 13 | 15.5 | mΩ | VGS=4.5V ID=9.5A | 2 |
| Forward Transconductance | gFS |  | 45 |  | S | VDS=5.0V ID=11.5A | 2 |
| Diode Forward Voltage | VSD |  | 0.71 | 1.2 | V | IS=12A VGS=0V | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 4 | A |  | 2 |
| Gate resistance | Rg | 0.2 | 0.55 | 0.9 | Ω | f=1.0MHz | 3 |
| Total Gate Charge(10V) | Qg |  | 33 | 50 | nC | VDD=10V ID=11.5A VDS=50V | 3 |
| Total Gate Charge(4.5V) | Qg |  | 15 | 25 | nC | VDD=10V ID=11.5A VDS=50V | 3 |
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 2 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Continuous Drain Current | ID |  |  | 11.5 | A | TA=25℃ | 2 |
| Continuous Drain Current | ID |  |  | 9 | A | TA=70℃ | 2 |
| Pulsed Drain Current | IDM |  |  | 46 | A |  | 2 |
| Avalanche Current | IAS |  |  | 20 | A |  | 2 |
| Avalanche energy | EAS |  |  | 20 | mJ | L=0.1mH | 2 |
| VDS Spike | VSPIKE |  |  | 120 | V | 10μS | 2 |
| Power Dissipation | PD |  |  | 3.1 | W | TA=25℃ | 2 |
| Power Dissipation | PD |  |  | 2 | W | TA=70℃ | 2 |
| Operating and Junction Temperature Range | Tj Tstg | -55 |  | 150 | ℃ |  | 2 |
| Maximum Junction-to-Ambient | RθJA |  |  | 40 | ℃/W | t≤10S | 2 |
| Maximum Junction-to-Ambient | RθJA |  |  | 75 | ℃/W | Steady-State | 2 |
| Maximum Junction-to Lead | RθJL |  |  | 24 | ℃/W | Steady-State | 2 |
| Input Capacitance | Ciss |  | 2420 |  | pF | VDS=50V VGS=0V f=1.0MHz | 3 |
| Output Capacitance | Coss |  | 170 |  | pF | VDS=50V VGS=0V f=1.0MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 11 |  | pF | VDS=50V VGS=0V f=1.0MHz | 3 |
| Gate-Source Charge | Qgs |  | 7 |  | nC | VDD=10V ID=11.5A VDS=50V | 3 |
| Gate-Drain Charge | Qgd |  | 4 |  | nC | VDD=10V ID=11.5A VDS=50V | 3 |
| Turn-On Delay Time | td(on) |  | 8 |  | ns | VDD=10V VDS=50V RL=4.35Ω RGEN=3.0Ω | 3 |
| Turn-On Rise Time | tr |  | 3 |  | ns | VDD=10V VDS=50V RL=4.35Ω RGEN=3.0Ω | 3 |
| Turn-Off Delay Time | td(off) |  | 25 |  | ns | VDD=10V VDS=50V RL=4.35Ω RGEN=3.0Ω | 3 |
| Turn-Off Fall Time | tf |  | 4 |  | ns | VDD=10V VDS=50V RL=4.35Ω RGEN=3.0Ω | 3 |
| Body Diode Reverse Recovery Time | trr |  | 25 |  | ns | IF=11.5A dI/dt=500A/μs | 3 |
| Body Diode Reverse Recovery Charge | Qrr |  | 110 |  | nC | IF=11.5A dI/dt=500A/μs | 3 |

## CAD (KiCad official)

- Symbol: `BRCS4294SC`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `brcs4294sc-etched.step` / `brcs4294sc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `brcs4294sc.step` / `brcs4294sc.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Foshan Blue Rocket Elec datasheet](docs/brcs4294sc-datasheet.pdf) (9 pp, sha256 `1e0bcca7a068e90b`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/brcs4294sc-datasheet.pdf)