component
BRCS3401MCQ
Public Made by Adomby adom
Foshan Blue Rocket Elec MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BRCS3401MCQ
Foshan Blue Rocket Elec · MOSFETs · SOT-23-3
BRCS3401MCQ from Foshan Blue Rocket Elec, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated at ±12 V (absolute maximum). |
| 2 | S | passive | Source of the P-channel MOSFET; the datasheet gives no separate pin-level limit, and the body diode forward voltage is specified source-to-drain (VSD -1.0 V max at IS = -1 A). |
| 3 | D | passive | Drain of the P-channel MOSFET; rated at VDS = -30 V with continuous drain current ID = -4.2 A at TA = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 2 | |||
| Drain Current - Continuous | ID | -4.2 | A | 2 | |||
| Drain Current - Continuous | ID(Ta=70℃) | -3.5 | A | Ta=70℃ | 2 | ||
| Pulsed Drain Current | IDM | -30 | A | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Total Power Dissipation | PD | 1.4 | W | 2 | |||
| Total Power Dissipation | PD(Ta=70℃) | 1 | W | Ta=70℃ | 2 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 2 | ||
| Maximum Junction-to-Ambient | RθJA | 125 | ℃/W | Ta=70℃ | 2 | ||
| Maximum Junction-to-Lead | RθJL | 60 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-24V VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | μA | VDS=-24V VGS=0V TJ=55℃ | 2 | ||
| Gate-Body Leakage | IGSS | -0.1 | 0.1 | μA | VGS=±12V VDS=0V | 2 | |
| On-State Drain Current | ID(on) | -25 | A | VGS=-4.5V VDS=-5V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.7 | -1 | -1.3 | V | VDS=VGS ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on)(1) | 52 | 60 | mΩ | VGS=-10V ID=-4.2A | 2 | |
| Static Drain-Source On-Resistance | RDS(on)(2) | 75 | mΩ | VGS=-10V ID=-4.2A TJ=125℃ | 2 | ||
| Static Drain-Source On-Resistance | RDS(on)(3) | 60 | 65 | mΩ | VGS=-4.5V ID=-4A | 2 | |
| Static Drain-Source On-Resistance | RDS(on)(4) | 75 | 120 | mΩ | VGS=-2.5V ID=-1A | 2 | |
| Forward Transconductance | gFS | 4 | 8 | S | VDS=-5V ID=-5A | 2 | |
| Drain-Source Diode Forward Voltage | VSD | -0.75 | -1 | V | VGS=0V IS=-1A | 2 |
CAD (KiCad official)
- Symbol:
BRCS3401MCQ - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
brcs3401mcq-etched.step/brcs3401mcq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);brcs3401mcq.step/brcs3401mcq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256
4b27892ada89957d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BRCS3401MCQ
**Foshan Blue Rocket Elec** · MOSFETs · SOT-23-3
BRCS3401MCQ from Foshan Blue Rocket Elec, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated at ±12 V (absolute maximum). |
| 2 | S | passive | Source of the P-channel MOSFET; the datasheet gives no separate pin-level limit, and the body diode forward voltage is specified source-to-drain (VSD -1.0 V max at IS = -1 A). |
| 3 | D | passive | Drain of the P-channel MOSFET; rated at VDS = -30 V with continuous drain current ID = -4.2 A at TA = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | | | V | | 2 |
| Drain Current - Continuous | ID | -4.2 | | | A | | 2 |
| Drain Current - Continuous | ID(Ta=70℃) | -3.5 | | | A | Ta=70℃ | 2 |
| Pulsed Drain Current | IDM | -30 | | | A | | 2 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 2 |
| Total Power Dissipation | PD | | | 1.4 | W | | 2 |
| Total Power Dissipation | PD(Ta=70℃) | | | 1 | W | Ta=70℃ | 2 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 2 |
| Maximum Junction-to-Ambient | RθJA | | | 125 | ℃/W | Ta=70℃ | 2 |
| Maximum Junction-to-Lead | RθJL | | | 60 | ℃/W | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-24V VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -5 | μA | VDS=-24V VGS=0V TJ=55℃ | 2 |
| Gate-Body Leakage | IGSS | -0.1 | | 0.1 | μA | VGS=±12V VDS=0V | 2 |
| On-State Drain Current | ID(on) | -25 | | | A | VGS=-4.5V VDS=-5V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.7 | -1 | -1.3 | V | VDS=VGS ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on)(1) | | 52 | 60 | mΩ | VGS=-10V ID=-4.2A | 2 |
| Static Drain-Source On-Resistance | RDS(on)(2) | | | 75 | mΩ | VGS=-10V ID=-4.2A TJ=125℃ | 2 |
| Static Drain-Source On-Resistance | RDS(on)(3) | | 60 | 65 | mΩ | VGS=-4.5V ID=-4A | 2 |
| Static Drain-Source On-Resistance | RDS(on)(4) | | 75 | 120 | mΩ | VGS=-2.5V ID=-1A | 2 |
| Forward Transconductance | gFS | | 4 | 8 | S | VDS=-5V ID=-5A | 2 |
| Drain-Source Diode Forward Voltage | VSD | | -0.75 | -1 | V | VGS=0V IS=-1A | 2 |
## CAD (KiCad official)
- Symbol: `BRCS3401MCQ`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `brcs3401mcq-etched.step` / `brcs3401mcq-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `brcs3401mcq.step` / `brcs3401mcq.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Foshan Blue Rocket Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604429956403646464) (8 pp, sha256 `4b27892ada89957d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/brcs3401mcq-datasheet.pdf)