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BRCS3400MA

Public Made by Adom

by adom

Foshan Blue Rocket Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BRCS3400MA

Foshan Blue Rocket Elec · MOSFETs · SOT-23

BRCS3400MA from Foshan Blue Rocket Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage VGS is rated at ±12 V.
2 S passive Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level limit for this terminal.
3 D passive Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated at 30 V with continuous drain current ID of 5.8 A at Ta=25℃.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 2
Drain Current, Continuous ID 5.8 A 2
Drain Current, Continuous (Ta=70℃) ID(Ta=70℃) 4.9 A Ta=70℃ 2
Pulsed Drain Current IDM 30 A 2
Gate-Source Voltage VGS -12 12 V 2
Total Power Dissipation PD 1.4 W 2
Total Power Dissipation (Ta=70℃) PD(Ta=70℃) 1 W Ta=70℃ 2
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=24V VGS=0V 2
Zero Gate Voltage Drain Current (TJ=55℃) IDSS 5 μA VDS=24V VGS=0V TJ=55℃ 2
Gate-Body Leakage IGSS -0.1 0.1 μA VGS=±12V VDS=0V 2
On-State Drain Current ID(on) 30 A VGS=4.5V VDS=5V 2
Gate Threshold Voltage VGS(th) 0.7 1.1 1.4 V VDS=VGS ID=250μA 2
Static Drain-Source On-Resistance RDS(on)(1) 22.8 28 mΩ VGS=10V ID=5.8A 2
Static Drain-Source On-Resistance (TJ=125℃) RDS(on)(2) 32 39 mΩ VGS=10V ID=5.8A TJ=125℃ 2
Static Drain-Source On-Resistance RDS(on)(3) 27.3 33 mΩ VGS=4.5V ID=5A 2
Static Drain-Source On-Resistance RDS(on)(4) 43.3 52 mΩ VGS=2.5V ID=4A 2
Forward Transconductance gFS 10 15 S VDS=5V ID=5A 2
Drain-Source Diode Forward Voltage VSD 0.77 1 V VGS=0V IS=1A 2
Input Capacitance Ciss 823 1030 pF VDS=15V VGS=0V f=1MHz 3
Gate resistance Rg 1.2 3.6 Ω VGS=0V VDS=0V f=1MHz 3
Total Gate Charge Qg 9.7 12 nC VGS=4.5V VDS=15V ID=5.8A 3
Turn-On Delay Time td(on) 3.3 5 ns VGS=10V RL=2.7Ω VDS=15V RGEN=3Ω 3
Turn-On Rise Time tr 4.8 7 ns VGS=10V RL=2.7Ω VDS=15V RGEN=3Ω 3
Turn-Off Delay Time td(off) 26.3 40 ns VGS=10V RL=2.7Ω VDS=15V RGEN=3Ω 3
Turn-Off Fall Time tf 4.1 6 ns VGS=10V RL=2.7Ω VDS=15V RGEN=3Ω 3
Body Diode Reverse Recovery Time trr 16 20 ns IF=5A dI/dt=100A/μs 3
Body Diode Reverse Recovery Charge Qrr 8.9 12 nC IF=5A dI/dt=100A/μs 3
Output Capacitance Coss 99 pF VDS=15V VGS=0V f=1MHz 3
Reverse Transfer Capacitance Crss 77 pF VDS=15V VGS=0V f=1MHz 3
Gate Source Charge Qgs 1.6 nC VGS=4.5V VDS=15V ID=5.8A 3
Gate Drain Charge Qgd 3.1 nC VGS=4.5V VDS=15V ID=5.8A 3

CAD (KiCad official)

  • Symbol: BRCS3400MA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: brcs3400ma-etched.step / brcs3400ma-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs3400ma.step / brcs3400ma.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (7 pp, sha256 871de08805888cae, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF