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BRCS200P03DSC

Foshan Blue Rocket Elec · MOSFETs · SOP-8

BRCS200P03DSC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of P-channel MOSFET 1 (dual P-channel device rated VDS = -30 V, ID = -7.1 A).
2 G1 input Gate terminal of P-channel MOSFET 1; gate-source voltage is rated VGS = ±20 V.
3 S2 passive Source terminal of P-channel MOSFET 2 (dual P-channel device rated VDS = -30 V, ID = -7.1 A).
4 G2 input Gate terminal of P-channel MOSFET 2; gate-source voltage is rated VGS = ±20 V.
5 D2 passive Drain terminal of P-channel MOSFET 2; pin 5 and pin 6 are both designated D2 and are internally the same drain.
6 D2 passive Drain terminal of P-channel MOSFET 2; pin 6 is designated D2 together with pin 5.
7 D1 passive Drain terminal of P-channel MOSFET 1; pin 7 and pin 8 are both designated D1.
8 D1 passive Drain terminal of P-channel MOSFET 1; pin 8 is designated D1 together with pin 7.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 2
Drain Current - Continuous ID -7.1 A 2
Drain Current - Pulsed IDM -40 A 2
Gate-Source Voltage VGS -20 20 V 2
Power Dissipation PD 2 W 2
Single Pulse Avalanche Energy EAS 152 mJ L=0.5mH 2
Avalanche Current IAS -19.5 A L=0.5mH 2
Junction and Storage Temperature Range Tj, Tstg -55 150 ℃ 2
Thermal resistance, junction - ambient RθJA 62.5 ℃/W t ≤ 10s 2
Thermal resistance, junction - ambient RθJA 90 ℃/W Steady-State 2
Thermal resistance, junction - lead RθJL 40 ℃/W Steady-State 2
Gate Threshold Voltage VGS(th) -1 -1.3 -2.5 V VDS=VGS ID=-250μA 2
Static Drain-Source On-Resistance RDS(ON) 20 22 mΩ VGS=-10V, ID=-20A 2
Static Drain-Source On-Resistance RDS(ON) 28 35 mΩ VGS=-4.5V, ID=-10A 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Drain-Source Breakdown Voltage BVDSS -30 V ID=-250μA VGS=0V 2
Zero Gate Voltage Drain Current IDSS -1 uA VDS=-30V VGS=0V 2
Diode Forward Voltage VSD -1.2 V IS=-1A, VGS=0V 2
Input Capacitance Ciss 1430 pF VDS=-25V VGS=0V f=1.0MHz 2
Output Capacitance Coss 580 pF VDS=-25V VGS=0V f=1.0MHz 2
Reverse Transfer Capacitance Crss 350 pF VDS=-25V VGS=0V f=1.0MHz 2
Gate resistance Rg 13 Ω VGS=0V VDS=0V f=1MHz 2
Total Gate Charge Qg(10V) 20 nC VGS=-10V, VDS=-15V, ID=-7.1A 2
Total Gate Charge Qg(4.5V) 9.8 nC 2
Gate Source Charge Qgs 3.7 nC 2
Gate Drain Charge Qgd 4.5 nC 2
Turn-On Delay Time td(on) 11 ns VGS=-10V VDS=-15V RL=0.75Ω RGEN=3Ω 3
Turn-On Rise Time tr 5.6 ns VGS=-10V VDS=-15V RL=0.75Ω RGEN=3Ω 3
Turn-Off Delay Time td(off) 28 ns VGS=-10V VDS=-15V RL=0.75Ω RGEN=3Ω 3
Turn-Off Fall Time tf 11 ns VGS=-10V VDS=-15V RL=0.75Ω RGEN=3Ω 3

CAD (KiCad official)

  • Symbol: BRCS200P03DSC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: brcs200p03dsc-etched.step / brcs200p03dsc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs200p03dsc.step / brcs200p03dsc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256 e4a6aa6066d990a7, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF