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Contents

README

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BRCS18N20RA

Foshan Blue Rocket Elec · MOSFETs · TO-220

BRCS18N20RA from Foshan Blue Rocket Elec, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V maximum, with a gate threshold of 1.0 V min to 3.0 V max at VDS=VGS, ID=250 µA.
2 D passive Drain; drain-source voltage is rated at 200 V, with continuous drain current of 18 A at Tc=25℃ and 13 A at Tc=100℃.
3 S passive Source; body diode forward voltage is 1.45 V max at VGS=0V, IS=18A.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 200 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=200V VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 μA VDS=200V TJ=55℃ 2
Gate-Body Leakage Current Forward IGSS 100 nA VGS=±20V VDS=0V 2
Gate Threshold Voltage VGS(th) 1 3 V VDS=VGS ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 130 170 mΩ VGS=10V ID=9A 2
Drain-Source Diode Forward Voltage VSD 1.45 V VGS=0V IS=18A 2
Total Gate Charge Qg(10V) 27 40 nC VGS=10V VDS=100V ID=18A 3
Total Gate Charge Qg(4.5V) 12 20 nC VGS=10V VDS=100V ID=18A 3
Drain-Source Voltage VDSS 200 V Ta=25℃ 2
Drain Current ID 18 A Tc=25℃ 2
Drain Current ID 13 A Tc=100℃ 2
Drain Current - Pulsed IDM 45 A Ta=25℃ 2
Gate-Source Voltage VGSS -20 20 V Ta=25℃ 2
Single Pulsed Avalanche Energy EAS 125 mJ L=10mH 2
Avalanche Current IAS 9.5 A L=10mH 2
Power Dissipation PD 132 W Tc=25℃ 2
Power Dissipation PD 52 W Tc=100℃ 2
Operating and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Maximum Junction-to-Ambient RθJA 24 ℃/W t≤10s 2
Maximum Junction-to-Ambient RθJA 54 ℃/W Steady-State 2
Maximum Junction-to-Case RθJC 0.95 ℃/W Steady-State 2
Gate resistance Rg 6.5 Ω VGS=0V VDS=0V f=1MHz 3
Input Capacitance Ciss 832 pF VDS=25V VGS=0V f=1.0MHz 3
Output Capacitance Coss 149 pF VDS=25V VGS=0V f=1.0MHz 3
Reverse Transfer Capacitance Crss 65 pF VDS=25V VGS=0V f=1.0MHz 3
Gate Source Charge Qgs 7 nC VGS=10V VDS=100V ID=18A 3
Gate Drain Charge Qgd 3 nC VGS=10V VDS=100V ID=18A 3
Turn-On Delay Time td(on) 8 ns VGS=10V VDS=100V RL=5.5Ω RGEN=3Ω 3
Turn-On Rise Time tr 10 ns VGS=10V VDS=100V RL=5.5Ω RGEN=3Ω 3
Turn-Off Delay Time td(off) 30 ns VGS=10V VDS=100V RL=5.5Ω RGEN=3Ω 3
Turn-Off Fall Time tf 4 ns VGS=10V VDS=100V RL=5.5Ω RGEN=3Ω 3
Body Diode Reverse Recovery Time trr 60 ns IF=18A dI/dt=500A/μs 3
Body Diode Reverse Recovery Charge Qrr 800 nC IF=18A dI/dt=500A/μs 3

CAD (KiCad official)

  • Symbol: BRCS18N20RA
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: brcs18n20ra-etched.step / brcs18n20ra-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs18n20ra.step / brcs18n20ra.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256 70417399d6c96df0, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF