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BRCS080N03DSC

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Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BRCS080N03DSC

Foshan Blue Rocket Elec · MOSFETs · SOP-8

BRCS080N03DSC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the first N-channel MOSFET (Q1), pinned as PIN1 in the datasheet pinning.
2 G1 input Gate terminal of the first N-channel MOSFET (Q1), pinned as PIN2 in the datasheet pinning.
3 S2 passive Source terminal of the second N-channel MOSFET (Q2), pinned as PIN3 in the datasheet pinning.
4 G2 input Gate terminal of the second N-channel MOSFET (Q2), pinned as PIN4 in the datasheet pinning.
5 D2 passive Drain terminal of the second N-channel MOSFET (Q2), pinned as PIN5 in the datasheet pinning.
6 D2 passive Drain terminal of the second N-channel MOSFET (Q2), pinned as PIN6 in the datasheet pinning.
7 D1 passive Drain terminal of the first N-channel MOSFET (Q1), pinned as PIN7 in the datasheet pinning.
8 D1 passive Drain terminal of the first N-channel MOSFET (Q1), pinned as PIN8 in the datasheet pinning.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 16 A 2
Pulsed Drain Current IDM 59 A 2
Power Dissipation PD 3.2 W 2
Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Maximum Junction-to-Ambient (Steady-State) RθJA 39 ℃/W Steady-State 2
Drain-Source Breakdown Voltage BVDSS 30 35 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V VGS=0V 2
Gate-Body leakage current IGSS -100 100 nA VGS=±20V VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.7 2.5 V VDS=VGS ID=250μA 2
Static Drain-Source On-Resistance (VGS=10V) RDS(on) 7.6 8 mΩ VGS=10V ID=20A 2
Static Drain-Source On-Resistance (VGS=4.5V) RDS(on) 10.8 12 mΩ VGS=4.5V ID=10A 2

CAD (KiCad official)

  • Symbol: BRCS080N03DSC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: brcs080n03dsc-etched.step / brcs080n03dsc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs080n03dsc.step / brcs080n03dsc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256 415eb1a15cbfb756, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF