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BRCS080C03SC

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Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BRCS080C03SC

Foshan Blue Rocket Elec · MOSFETs · SOP-8

BRCS080C03SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (VDS 30V, ID 15.5A, RDS(on) typ. 7.5mΩ at VGS=10V).
2 G1 input Gate of the N-channel MOSFET (VGS max ±20V, threshold 1.0 to 2.5V).
3 S2 passive Source of the P-channel MOSFET (VDS -30V, ID -11.5A, RDS(on) typ. 12mΩ at VGS=-10V).
4 G2 input Gate of the P-channel MOSFET (VGS max ±20V, threshold -1.0 to -2.5V).
5 D2 passive Drain of the P-channel MOSFET (VDSS -30V, pulsed ID -37A), shorted internally with pin 6.
6 D2 passive Drain of the P-channel MOSFET (VDSS -30V, pulsed ID -37A), shorted internally with pin 5.
7 D1 passive Drain of the N-channel MOSFET (VDSS 30V, pulsed ID 49A), shorted internally with pin 8.
8 D1 passive Drain of the N-channel MOSFET (VDSS 30V, pulsed ID 49A), shorted internally with pin 7.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-Source Breakdown Voltage BVDSS 30 35.5 V VGS=0V ID=250μA 3
N-ch Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V VGS=0V 3
N-ch Gate-Body leakage current IGSS -100 100 nA VGS=±20V VDS=0V 3
N-ch Gate Threshold Voltage VGS(th) 1 1.8 2.5 V VDS=VGS ID=250μA 3
N-ch Static On-Resistance RDS(on) 7.5 8 mΩ VGS=10V ID=10A 3
N-ch Static On-Resistance RDS(on) 11 15 mΩ VGS=4.5V ID=10A 3
N-ch Diode Forward Voltage VSD 1.4 V VGS=0V IS=1.0A 3
P-ch Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=-250μA 6
P-ch Zero Gate Voltage Drain Current IDSS -1 μA VDS=-4030VGS=0V 6
P-ch Gate-Body leakage current IGSS -100 100 nA VGS=±20V VDS=0V 6
P-ch Gate Threshold Voltage VGS(th) -1 -1.5 -2.5 V VDS=VGS ID=-250μA 6
P-ch Static On-Resistance RDS(on) 12 13 mΩ VGS=-10V ID=-10A 6
P-ch Static On-Resistance RDS(on) 17 20 mΩ VGS=-4.5V ID=-10A 6
P-ch Diode Forward Voltage VSD -1.4 V VGS=0V IS=-1.0A 6
N-ch Drain-Source Voltage VDSS 30 V Ta=25℃ 2
P-ch Drain-Source Voltage VDSS -30 V Ta=25℃ 2
Gate-Source Voltage VGSS -20 20 V Ta=25℃ 2
N-ch Continuous Drain Current ID 15.5 A Ta=25℃ 2
P-ch Continuous Drain Current ID -11.5 A Ta=25℃ 2
N-ch Pulsed Drain Current IDM 49 A Ta=25℃ 2
P-ch Pulsed Drain Current IDM -37 A Ta=25℃ 2
N-ch Power Dissipation PD 3.2 W Ta=25℃ 2
P-ch Power Dissipation PD 3 W Ta=25℃ 2
Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ Ta=25℃ 2
Maximum Junction-to-Ambient Thermal Resistance RθJA 90 ℃/W 2
N-ch Input Capacitance Ciss 1170 pF VDS=25V VGS=0V f=1.0MHz 3
N-ch Output Capacitance Coss 110 pF VDS=25V VGS=0V f=1.0MHz 3
N-ch Reverse Transfer Capacitance Crss 100 pF VDS=25V VGS=0V f=1.0MHz 3
N-ch Gate resistance Rg 3.7 Ω VDS=0V VGS=0V f=1.0MHz 3
N-ch Total Gate Charge Qg(10V) 40 nC VGS=10V VDS=15V ID=10A 3
N-ch Total Gate Charge Qg(4.5V) 22 nC VGS=10V VDS=15V ID=10A 3
N-ch Gate-Source Charge Qgs 11 nC VGS=10V VDS=15V ID=10A 3
N-ch Gate-Drain Charge Qgd 5 nC VGS=10V VDS=15V ID=10A 3
N-ch Turn-On Delay Time td(on) 11 ns VDS=15V VGS=10V RL=0.75Ω RGEN=3Ω 3
N-ch Turn-On Rise Time tr 14 ns VDS=15V VGS=10V RL=0.75Ω RGEN=3Ω 3
N-ch Turn-Off Delay Time td(off) 38 ns VDS=15V VGS=10V RL=0.75Ω RGEN=3Ω 3
N-ch Turn-Off Fall Time tf 10 ns VDS=15V VGS=10V RL=0.75Ω RGEN=3Ω 3
P-ch Input Capacitance Ciss 2100 pF VDS=-25V VGS=0V f=1.0MHz 6
P-ch Output Capacitance Coss 1900 pF VDS=-25V VGS=0V f=1.0MHz 6
P-ch Reverse Transfer Capacitance Crss 640 pF VDS=-25V VGS=0V f=1.0MHz 6
P-ch Gate resistance Rg 4 Ω VDS=0V VGS=0V f=1.0MHz 6
P-ch Total Gate Charge Qg(10V) 35 nC VGS=-10V VDS=-15V ID=-10A 6
P-ch Total Gate Charge Qg(4.5V) 17 nC VGS=-10V VDS=-15V ID=-10A 6
P-ch Gate-Source Charge Qgs 5.7 nC VGS=-10V VDS=-15V ID=-10A 6
P-ch Gate-Drain Charge Qgd 8.8 nC VGS=-10V VDS=-15V ID=-10A 6
P-ch Turn-On Delay Time td(on) 11 ns VDS=-15V VGS=-10V RL=1Ω RGEN=3Ω 6
P-ch Turn-On Rise Time tr 7.5 ns VDS=-15V VGS=-10V RL=1Ω RGEN=3Ω 6
P-ch Turn-Off Delay Time td(off) 43.5 ns VDS=-15V VGS=-10V RL=1Ω RGEN=3Ω 6
P-ch Turn-Off Fall Time tf 17.5 ns VDS=-15V VGS=-10V RL=1Ω RGEN=3Ω 6

CAD (KiCad official)

  • Symbol: BRCS080C03SC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: brcs080c03sc-etched.step / brcs080c03sc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs080c03sc.step / brcs080c03sc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (11 pp, sha256 b0faf112e9e54e7b, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF