component
BR4953
Public Made by Adomby adom
Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BR4953
Foshan Blue Rocket Elec · MOSFETs · SOP-8
BR4953 from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first P-channel MOSFET, rated for a drain-source voltage VDSS of -30 V. |
| 2 | G1 | passive | Gate terminal of the first P-channel MOSFET, with gate-source voltage VGSS rated at ±20 V. |
| 3 | S2 | passive | Source terminal of the second P-channel MOSFET, rated for a drain-source voltage VDSS of -30 V. |
| 4 | G2 | passive | Gate terminal of the second P-channel MOSFET, with gate-source voltage VGSS rated at ±20 V. |
| 5 | D2 | passive | Drain terminal of the second P-channel MOSFET, with continuous drain current ID rated at -4.9 A. |
| 6 | D2 | passive | Drain terminal of the second P-channel MOSFET, with continuous drain current ID rated at -4.9 A. |
| 7 | D1 | passive | Drain terminal of the first P-channel MOSFET, with continuous drain current ID rated at -4.9 A. |
| 8 | D1 | passive | Drain terminal of the first P-channel MOSFET, with continuous drain current ID rated at -4.9 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -4.9 | A | Surface mounted on 1in² pad, t≤10 s | 2 | ||
| Pulsed Drain Current | IDM | -20 | A | 2 | |||
| Diode Continuous Forward Current | IS | -2 | A | 2 | |||
| Power Dissipation for Single Operation | PD | 2 | W | Ta=25℃; surface mounted on 1in² pad, t≤10 s | 2 | ||
| Power Dissipation for Single Operation | PD | 0.8 | W | Ta=100℃; surface mounted on 1in² pad, t≤10 s | 2 | ||
| Maximum Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 62.5 | ℃/W | Surface mounted on 1in² pad, t≤10 s | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V IDS=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-24V VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=85°C) | IDSS | -30 | μA | VDS=-24V VGS=0V TJ=85°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.45 | -2 | V | VDS=VGS IDS=-250μA | 2 |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 53 | 60 | mΩ | VGS=-10V IDS=-4.9A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 80 | 95 | mΩ | VGS=-4.5V IDS=-3.6A | 2 | |
| Diode Forward Voltage | VSD | -0.7 | -1.3 | V | VGS=0V ISD=-3.0A | 2 | |
| Total Gate Charge | Qg | 22.6 | 30 | nC | VDS=-15V VGS=-10V IDS=-4.9A | 2 | |
| Turn-on Delay Time | td(ON) | 10 | 18 | ns | VDD=-15V RL=15Ω IDS=-1A VGEN=-10V RG=6Ω | 3 | |
| Turn-on Rise Time | Tr | 15 | 20 | ns | VDD=-15V RL=15Ω IDS=-1A VGEN=-10V RG=6Ω | 3 | |
| Turn-off Delay Time | Td(OFF) | 22 | 38 | ns | VDD=-15V RL=15Ω IDS=-1A VGEN=-10V RG=6Ω | 3 | |
| Turn-off Fall Time | Tf | 15 | 25 | ns | VDD=-15V RL=15Ω IDS=-1A VGEN=-10V RG=6Ω | 3 | |
| Gate-Source Charge | Qgs | 4.7 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 2 | nC | 2 | |||
| Gate Resistance | RG | 11 | Ω | VGS=0V VDS=0V F=1MHz | 3 | ||
| Input Capacitance | Ciss | 1260 | pF | VGS=0V VDS=-25V Frequency=1.0MHz | 3 | ||
| Output Capacitance | Coss | 400 | pF | 3 | |||
| Reverse Transfer Capacitance | Crss | 220 | pF | 3 |
CAD (KiCad official)
- Symbol:
BR4953 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
br4953-etched.step/br4953-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);br4953.step/br4953.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256
6330a5cbf372d5fd, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BR4953
**Foshan Blue Rocket Elec** · MOSFETs · SOP-8
BR4953 from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first P-channel MOSFET, rated for a drain-source voltage VDSS of -30 V. |
| 2 | G1 | passive | Gate terminal of the first P-channel MOSFET, with gate-source voltage VGSS rated at ±20 V. |
| 3 | S2 | passive | Source terminal of the second P-channel MOSFET, rated for a drain-source voltage VDSS of -30 V. |
| 4 | G2 | passive | Gate terminal of the second P-channel MOSFET, with gate-source voltage VGSS rated at ±20 V. |
| 5 | D2 | passive | Drain terminal of the second P-channel MOSFET, with continuous drain current ID rated at -4.9 A. |
| 6 | D2 | passive | Drain terminal of the second P-channel MOSFET, with continuous drain current ID rated at -4.9 A. |
| 7 | D1 | passive | Drain terminal of the first P-channel MOSFET, with continuous drain current ID rated at -4.9 A. |
| 8 | D1 | passive | Drain terminal of the first P-channel MOSFET, with continuous drain current ID rated at -4.9 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | -30 | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current | ID | | | -4.9 | A | Surface mounted on 1in² pad, t≤10 s | 2 |
| Pulsed Drain Current | IDM | | | -20 | A | | 2 |
| Diode Continuous Forward Current | IS | | | -2 | A | | 2 |
| Power Dissipation for Single Operation | PD | | | 2 | W | Ta=25℃; surface mounted on 1in² pad, t≤10 s | 2 |
| Power Dissipation for Single Operation | PD | | | 0.8 | W | Ta=100℃; surface mounted on 1in² pad, t≤10 s | 2 |
| Maximum Junction Temperature | Tj | | | 150 | ℃ | | 2 |
| Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 2 |
| Thermal Resistance-Junction to Ambient | RθJA | | | 62.5 | ℃/W | Surface mounted on 1in² pad, t≤10 s | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V IDS=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-24V VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TJ=85°C) | IDSS | | | -30 | μA | VDS=-24V VGS=0V TJ=85°C | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.45 | -2 | V | VDS=VGS IDS=-250μA | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V VDS=0V | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 53 | 60 | mΩ | VGS=-10V IDS=-4.9A | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 80 | 95 | mΩ | VGS=-4.5V IDS=-3.6A | 2 |
| Diode Forward Voltage | VSD | | -0.7 | -1.3 | V | VGS=0V ISD=-3.0A | 2 |
| Total Gate Charge | Qg | | 22.6 | 30 | nC | VDS=-15V VGS=-10V IDS=-4.9A | 2 |
| Turn-on Delay Time | td(ON) | | 10 | 18 | ns | VDD=-15V RL=15Ω IDS=-1A VGEN=-10V RG=6Ω | 3 |
| Turn-on Rise Time | Tr | | 15 | 20 | ns | VDD=-15V RL=15Ω IDS=-1A VGEN=-10V RG=6Ω | 3 |
| Turn-off Delay Time | Td(OFF) | | 22 | 38 | ns | VDD=-15V RL=15Ω IDS=-1A VGEN=-10V RG=6Ω | 3 |
| Turn-off Fall Time | Tf | | 15 | 25 | ns | VDD=-15V RL=15Ω IDS=-1A VGEN=-10V RG=6Ω | 3 |
| Gate-Source Charge | Qgs | | 4.7 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 2 | | nC | | 2 |
| Gate Resistance | RG | | 11 | | Ω | VGS=0V VDS=0V F=1MHz | 3 |
| Input Capacitance | Ciss | | 1260 | | pF | VGS=0V VDS=-25V Frequency=1.0MHz | 3 |
| Output Capacitance | Coss | | 400 | | pF | | 3 |
| Reverse Transfer Capacitance | Crss | | 220 | | pF | | 3 |
## CAD (KiCad official)
- Symbol: `BR4953`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `br4953-etched.step` / `br4953-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `br4953.step` / `br4953.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Foshan Blue Rocket Elec datasheet](docs/br4953-datasheet.pdf) (8 pp, sha256 `6330a5cbf372d5fd`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/br4953-datasheet.pdf)