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BR4407

Foshan Blue Rocket Elec · MOSFETs · SOP-8

BR4407 from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; absolute maximum drain-source voltage VDSS is -30 V.
2 S passive Source terminal of the P-channel MOSFET; absolute maximum drain-source voltage VDSS is -30 V.
3 S passive Source terminal of the P-channel MOSFET; absolute maximum drain-source voltage VDSS is -30 V.
4 G input Gate terminal; gate-source voltage VGSS is limited to ±20 V.
5 D passive Drain terminal; continuous drain current ID is -12 A at Ta=25°C and pulsed drain current IDM is -60 A.
6 D passive Drain terminal; continuous drain current ID is -12 A at Ta=25°C and pulsed drain current IDM is -60 A.
7 D passive Drain terminal; continuous drain current ID is -12 A at Ta=25°C and pulsed drain current IDM is -60 A.
8 D passive Drain terminal; continuous drain current ID is -12 A at Ta=25°C and pulsed drain current IDM is -60 A.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOP-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V ID=-250μA VGS=0V 3
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-24V VGS=0V 3
Zero Gate Voltage Drain Current (TJ=55°C) IDSS -5 μA TJ=55°C, VDS=-24V VGS=0V 3
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V VGS=±20V 3
Gate Threshold Voltage VGS(th) -1 -1.5 -3 V VDS=VGS ID=-250μA 3
On State Drain Current ID(ON) 60 A VGS=-10V VDS=-5V 3
Static Drain-Source On-Resistance RDS(ON) 11 14 mΩ VGS=-10V ID=-10A 3
Static Drain-Source On-Resistance (TJ=125°C) RDS(ON) 15 19 mΩ VGS=-10V ID=-10A TJ=125°C 3
Static Drain-Source On-Resistance RDS(ON) 10 13 mΩ VGS=-20V ID=-10A 3
Diode Forward Voltage VSD -0.72 -1 V IS=-1A VGS=0V 3
Maximum Body-Diode Continuous Current IS -4.2 A 3
Total Gate Charge Qg 37.2 45 nC VGS=-10V VDS=-15V ID=-12A 3
Gate Resistance Rg 2 3 Ω VGS=0V VDS=0V f=1MHz 3
Input Capacitance Ciss 2076 2500 pF VGS=0V VDS=-15V f=1MHz 3
Body Diode Reverse Recovery Time trr 33 40 ns IF=-12A dI/dt=100A/μs 3
Drain-Source Voltage VDSS -30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID -12 A Ta=25°C 2
Continuous Drain Current ID -10 A Ta=70°C 2
Pulsed Drain Current IDM -60 A 2
Power Dissipation for Single Operation PD 3 W Ta=25°C 2
Power Dissipation for Single Operation PD 2.1 W Ta=100°C 2
Maximum Junction Temperature Tj 150 ℃ 2
Storage Temperature Range Tstg -55 150 ℃ 2
Thermal Resistance Junction to Ambient RθJA 40 ℃/W t≦10s 2
Thermal Resistance Junction to Ambient RθJA 75 ℃/W 2
Maximum Junction-to-Lead Thermal Resistance RθJL 30 ℃/W 2

CAD (KiCad official)

  • Symbol: BR4407
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: br4407-etched.step / br4407-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); br4407.step / br4407.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256 0de6e498d410a609, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF