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BR24H128FVT-5ACE2

Public Made by Adom

by adom

ROHM Semicon EEPROM, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BR24H128FVT-5ACE2

ROHM Semicon · EEPROM · TSSOP-8

BR24H128FVT-5ACE2 from ROHM Semicon, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A0 input Slave address setting input that must be connected to VCC or GND; it has an internal pull-down, so an open pin behaves as GND.
2 A1 input Slave address setting input that must be connected to VCC or GND; it has an internal pull-down, so an open pin behaves as GND.
3 A2 input Slave address setting input that must be connected to VCC or GND; it has an internal pull-down, so an open pin behaves as GND.
4 GND power_in Reference voltage of all inputs and outputs, 0 V.
5 SDA bidirectional Serial data input/output; it is an NMOS open-drain output and therefore requires a pull-up resistor.
6 SCL input Serial clock input for the I2C bus.
7 WP input Write protect input that must be connected to VCC or GND or driven HIGH or LOW; it has an internal pull-down and an open pin is recognized as LOW.
8 VCC power_in Connect to the power source; the datasheet gives an operating supply range of 1.7 V to 5.5 V.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TSSOP-8
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VCC 1.7 5.5 V 6
Ambient Operating Temperature Ta -40 125 °C 6
Bypass Capacitor C 0.1 μF 6
Input/Output Capacitance (SDA) CI/O 8 pF VI/O = GND 6
Input Capacitance (SCL, A0, A1, A2, WP) CIN 8 pF VIN = GND 6
Input Impedance 1 ZIH 500 kΩ 0.7VCC ≤ VIN (A0, A1, A2, WP) 6
Input Impedance 2 ZIL 30 kΩ VIN ≤ 0.3VCC (A0, A1, A2, WP) 6
Write Cycles 4e+06 Times Ta = 25 °C 6
Write Cycles 1.2e+06 Times Ta = 85 °C 6
Write Cycles 500000 Times Ta = 105 °C 6
Write Cycles 300000 Times Ta = 125 °C 6
Data Retention 100 Years Ta = 25 °C 6
Data Retention 60 Years Ta = 105 °C 6
Data Retention 50 Years Ta = 125 °C 6
Input Low Voltage VIL -0.3 V 6
Output Low Voltage 1 VOL1 0.4 V IOL = 3.2 mA, 2.5 V ≤ VCC ≤ 5.5 V (SDA) 6
Output Low Voltage 2 VOL2 0.2 V IOL = 1.0 mA, 1.7 V ≤ VCC < 2.5 V (SDA) 6
Input Leakage Current 1 ILI1 -2 2 μA VIN = 0 V or VCC (A0, A1, A2, WP) 6
Input Leakage Current 2 ILI2 -2 2 μA VIN = 0 V to VCC (SCL) 6
Output Leakage Current ILO -2 2 μA VOUT = 0 V to VCC (SDA) 6
Supply Current (Write) ICC1 1.7 mA VCC = 5.5 V, fSCL = 1 MHz, tWR = 3.5 ms; Byte Write, Page Write 6
Supply Current (Read) ICC2 2 mA VCC = 5.5 V, fSCL = 1 MHz; Random Read, Current Read, Sequential Read 6
Standby Current ISB 10 μA VCC = 5.5 V, SDA, SCL = VCC; A0, A1, A2, WP = 0 V 6
Clock Frequency fSCL 1 MHz 7
Data Clock High Period tHIGH 260 ns 7
Data Clock Low Period tLOW 500 ns 7
SDA, SCL (input) Rise Time tR 120 ns 7
SDA, SCL (input) Fall Time tF1 120 ns 7
SDA (output) Fall Time tF2 120 ns 7
Start Condition Hold Time tHD:STA 250 ns 7
Start Condition Setup Time tSU:STA 200 ns 7
Input Data Hold Time tHD:DAT 0 ns 7
Input Data Setup Time tSU:DAT 50 ns 7
Output Data Delay Time tPD 50 450 ns 7
Output Data Hold Time tDH 50 ns 7
Stop Condition Setup Time tSU:STO 250 ns 7
Bus Free Time tBUF 500 ns 7
Write Cycle Time tWR 3.5 ms 7
Noise Suppression Time (SCL, SDA) tI 50 ns 7
WP Hold Time tHD:WP 1 μs 7
WP Setup Time tSU:WP 0.1 μs 7
WP High Period tHIGH:WP 1 μs 7
Supply Voltage VCC -0.3 6.5 V Ta = 25 °C 4
Input Voltage / Output Voltage -0.3 V Ta = 25 °C 4
Input Voltage / Output Voltage (pulse width 50 ns or less) -1 V Pulse width 50 ns or less 4
Electro Static Discharge (Human Body Model) VESD -4000 4000 V Ta = 25 °C 4
Maximum Output Low Current (SDA) IOLMAX 10 mA Ta = 25 °C 4
Maximum Junction Temperature Tjmax 150 °C 4
Storage Temperature Range Tstg -65 150 °C 4
Junction to Ambient (TSSOP-B8) θJA 251.9 °C/W 1s board (JESD51-3) 4
Junction to Ambient (TSSOP-B8) θJA 152.1 °C/W 2s2p board (JESD51-7) 4
Junction to Top Characterization Parameter (TSSOP-B8) ΨJT 31 °C/W 1s board (JESD51-3) 4
Junction to Top Characterization Parameter (TSSOP-B8) ΨJT 20 °C/W 2s2p board (JESD51-7) 4

CAD (KiCad official)

  • Symbol: BR24H128FVT-5ACE2
  • Footprint: Package_SO:TSSOP-8_3x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: br24h128fvt-5ace2-etched.step / br24h128fvt-5ace2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); br24h128fvt-5ace2.step / br24h128fvt-5ace2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (41 pp, sha256 69af84c30756a3a6, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF