component
BQ29700DSER
Public Made by Adomby adom
Texas Instruments Battery Management, WSON-6(1.5x1.5). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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BQ29700DSER
Texas Instruments · Battery Management · WSON-6(1.5x1.5)
BQ29700DSER from Texas Instruments, in a WSON-6(1.5x1.5). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | NC | unconnected | No connection pin, electrically open, so it is left unconnected. |
| 2 | COUT | output | Charge FET gate drive output driven from the BAT supply, transitioning high to low on a fault, with a 5MΩ resistor to Pack- to discharge the gate when the FET is off. |
| 3 | DOUT | output | Discharge FET gate drive output driven from the BAT supply, transitioning high to low on a fault, with a 5MΩ resistor to VSS to discharge the gate when the FET is off. |
| 4 | VSS | power_in | Cell negative ground reference; internal cell voltage measurement and overcurrent sensing are referenced to this node. |
| 5 | BAT | power_in | Input supply connected to the battery pack positive terminal, with an operating range of 1.5V to 8V (BAT-VSS) and a 0.1µF capacitor to ground for noise filtering. |
| 6 | V- | power_in | Sense node for overcurrent and load short detection, measured differentially against VSS, with a 2.2kΩ resistor to Pack- in the application; negative input range is BAT-25V to BAT. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-6(1.5x1.5) |
| Category | Power Management (PMIC) |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage BAT | -0.3 | 12 | V | 4 | |||
| Operating temperature | TFUNC | -40 | 85 | °C | 4 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 4 | ||
| Positive input voltage BAT | -0.3 | 8 | V | 5 | |||
| Operating temperature | TAmb | -40 | 85 | °C | 5 | ||
| Storage temperature | TS | -55 | 150 | °C | 5 | ||
| Lead temperature (soldering 10s) | 300 | °C | soldering 10s | 5 | |||
| VBAT device operating range | VBAT | 1.5 | 8 | V | BAT, VSS | 5 | |
| VBAT device operating range | VBAT | 1.5 | 28 | V | BAT, V- | 5 | |
| Current consumption in NORMAL mode | INORMAL | 4 | 5.5 | µA | BAT = 3.8V, V- = 0V | 5 | |
| Charge FET low output | VOL | 0.4 | 0.5 | V | IOL = 30µA, BAT = 3.8V | 5 | |
| Charge FET high output | VOH | 3.4 | 3.7 | V | IOH = -30µA, BAT = 3.8V | 5 | |
| Discharge FET low output | VOL | 0.2 | 0.5 | V | IOL = 30µA, BAT = 2V | 5 | |
| Discharge FET high output | VOH | 3.4 | 3.7 | V | IOH = -30µA, BAT = 3.8V | 5 | |
| Resistance between V- and VBAT | RV-D | 100 | 300 | 550 | kΩ | VBAT = 1.8V, V- = 0V | 5 |
| Current sink on V- to VSS | IV-S | 8 | 24 | µA | VBAT = 3.8V | 5 | |
| 0V battery charging start voltage | V0CHG | 1.7 | V | 0V battery charging function allowed | 6 | ||
| 0V battery charging inhibit voltage threshold | V0INH | 0.75 | V | 0V battery charging function disallowed | 6 | ||
| Overcharge detection voltage accuracy | VOVP | -10 | 10 | mV | TA = 25°C | 6 | |
| Overcharge detection voltage accuracy | VOVP | -20 | 20 | mV | TA = 0°C to 60°C | 6 | |
| Overcharge release hysteresis voltage | VOVP-Hys | -20 | 20 | mV | 100mV and (VSS, V-) > OCC (min) for release, TA = 25°C | 6 | |
| Over-discharge detection voltage | VUVP | -50 | 50 | mV | TA = 25°C | 6 | |
| Over-discharge release hysteresis voltage | VUVP+Hys | -50 | 50 | mV | 100mV and (BAT, V-) > 1V for release, TA = 25°C | 6 | |
| Discharging overcurrent detection voltage | VOCD | -10 | 10 | mV | TA = 25°C | 6 | |
| Discharging overcurrent detection voltage | VOCD | -15 | 15 | mV | TA = -40°C to 85°C | 6 | |
| Charging overcurrent detection voltage | VOCC | -10 | 10 | mV | TA = 25°C | 6 | |
| Charging overcurrent detection voltage | VOCC | -15 | 15 | mV | TA = -40°C to 85°C | 6 | |
| Short Circuit detection voltage | VSCC | -100 | 100 | mV | TA = 25°C | 6 | |
| Overcharge detection delay time | tOVPD | -20 | 20 | % | Factory Device Configuration: 0.25s, 1s, 1.25s, 4.5s | 6 | |
| Over-discharge detection delay time | tUVPD | -20 | 20 | % | Factory Device Configuration: 20ms, 96ms, 125ms, 144ms | 6 | |
| Discharging overcurrent detection delay time | tOCDD | -20 | 20 | % | Factory Device Configuration: 8ms, 16ms, 20ms, 48ms | 6 | |
| Charging overcurrent detection delay time | tOCCD | -20 | 20 | % | Factory Device Configuration: 4ms, 6ms, 8ms, 16ms | 6 | |
| Short Circuit detection delay time | tSCCD | -50 | 50 | % | 250µs (fixed) | 6 | |
| Overcharge detection voltage setting (BQ29700) | VOVP | 4.275 | V | Factory-programmed OVP threshold for BQ29700 | 3 | ||
| Over-discharge detection voltage setting (BQ29700) | VUVP | 2.8 | V | Factory-programmed UVP threshold for BQ29700 | 3 | ||
| Charging overcurrent detection voltage setting (BQ29700) | VOCC | -0.1 | V | Factory-programmed OCC threshold for BQ29700 | 3 | ||
| Discharging overcurrent detection voltage setting (BQ29700) | VOCD | 0.1 | V | Factory-programmed OCD threshold for BQ29700 | 3 | ||
| Short Circuit detection voltage setting (BQ29700) | VSCC | 0.5 | V | Factory-programmed SCD threshold for BQ29700 | 3 | ||
| Overcharge detection delay time setting (BQ29700) | tOVPD | 1.25 | s | Factory-programmed OVP delay for BQ29700 | 3 | ||
| Over-discharge detection delay time setting (BQ29700) | tUVPD | 144 | ms | Factory-programmed UVP delay for BQ29700 | 3 | ||
| Charging overcurrent detection delay time setting (BQ29700) | tOCCD | 8 | ms | Factory-programmed OCC delay for BQ29700 | 3 | ||
| Discharging overcurrent detection delay time setting (BQ29700) | tOCDD | 20 | ms | Factory-programmed OCD delay for BQ29700 | 3 | ||
| Short Circuit detection delay time setting (BQ29700) | tSCCD | 250 | µs | Factory-programmed SCD delay for BQ29700 | 3 | ||
| Junction-to-ambient thermal resistance, high K | RθJA | 190.5 | °C/W | DSE (WSON) package | 5 | ||
| Thermal resistance junction to ambient | θJA | 250 | °C/W | Listed in Recommended Operating Conditions | 5 | ||
| Junction-to-case(top) thermal resistance | RθJC(top) | 94.9 | °C/W | DSE (WSON) package | 5 | ||
| Junction-to-board thermal resistance | RθJB | 149.3 | °C/W | DSE (WSON) package | 5 | ||
| Junction-to-top characterization parameter | ψJT | 6.4 | °C/W | DSE (WSON) package | 5 | ||
| Junction-to-board characterization parameter | ψJB | 152.8 | °C/W | DSE (WSON) package | 5 |
CAD (KiCad official)
- Symbol:
BQ29700DSER - Footprint:
Package_SON:WSON-6_1.5x1.5mm_P0.5mm - 3D model: WSON-6(1.5x1.5) (KiCad packages3D, STEP)
- 3D model files:
bq29700dser-etched.step/bq29700dser-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bq29700dser.step/bq29700dser.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (35 pp, sha256
011527de4b541f4c, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).