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BQ26500PWR

Texas Instruments · Battery Management ICs · TSSOP-8

BQ26500PWR from Texas Instruments, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 RBI input Register back-up input; the datasheet states no voltage or current limits for this pin in the text provided.
2 VCC power_in VCC supply input; the electrical characteristics are specified for 2.6 V ≤ VCC ≤ 4.5 V.
3 VSS power_in Ground input for the device.
4 HDQ bidirectional Single-wire HDQ serial interface; VOL max 0.4 V at IOL = 2 mA, with an internal pull-down current of 3 µA.
5 BAT input Battery voltage sense input; the datasheet states no voltage limits for this pin in the text provided.
6 SRN input Current sense input (negative); the voltage-to-frequency input (VSRP − VSRN) is specified from −100 mV to 100 mV.
7 SRP input Current sense input (positive); the voltage-to-frequency input (VSRP − VSRN) is specified from −100 mV to 100 mV.
8 GPIO bidirectional General-purpose input/output port; VIH min 1.9 V, VIL max 0.7 V, VOL max 0.4 V at IOL = 0.3 mA, and it receives the 20-22 V EEPROM programming voltage during programming.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package TSSOP-8
Category Power Supply Chip
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage range, VCC (all with respect to VSS) VCC -0.3 7 V all with respect to VSS 2
Input voltage range at SRP, SRN, RBI, and BAT (all with respect to VSS) -0.3 V all with respect to VSS; maximum printed as VCC + 0.3 V 2
Input voltage HDQ, GPIO (with respect to VSS) -0.3 7 V with respect to VSS 2
Input voltage GPIO (with respect to VSS) during EEPROM programming only -0.3 22 V during EEPROM programming only 2
Output sink current at GPIO, HDQ 5 mA 2
Operating free-air temperature range, TA TA -20 70 °C 2
Storage temperature range, Tstg Tstg -65 150 °C 2
Junction temperature range, TJ TJ -40 125 °C 2
Lead temperature 300 °C 1.6 mm (1/16 inch) from case for 10 seconds 2
Supply voltage, VCC VCC 2.6 4.5 V 2
Operating free-air temperature, TJ TJ -20 70 °C 2
Input voltage range at SRP and SRN, (with respect to VSS) -100 100 mV with respect to VSS 2
Active current ICC(ACT) 60 100 µA VCC > VCC(min) 2
Sleep current ICC(SLP) 1.2 2.5 µA 2
Ship current ICC(SHP) 0.9 1.7 µA 2
Hibernate current ICC(POR) 0.6 1.5 µA 0 V < VCC < V(POR) 2
RBI current 20 nA RBI pin only, VCC < V(POR) 2
POR threshold V(POR) 2.05 2.55 V 2
Measurement range VI(BAT) 2.6 4.5 V VCC = VI(BAT) 2
Reported accuracy -20 20 mV 2
Reported temperature accuracy -3 3 °K 2
Internal oscillator frequency fOSC -3.5 1 2.5 % 3
Internal oscillator frequency fOSC -2.5 1 2.5 % TA = 0°C to 50°C 3
Voltage-to-frequency converter offset 15 µV 3
Voltage-to-frequency input VSRP − VSRN -100 100 mV 3
Programming voltage high time tPROG 20 100 ms VPROG = 21 V 3
Programming voltage VPROG 20 22 V Applied to GPIO pin 3
EEPROM programming current IPROG 3 mA Current into GPIO pin 3
High-level input voltage VIH 1.9 V 3
Low-level input voltage VIL 0.7 V 3
GPIO low-level output voltage VOL 0.4 V IOL = 0.3 mA 3
HDQ low-level output voltage VOL 0.4 V IOL = 2 mA 3
HDQ internal pull-down current IHDQPD 3 µA 3
Break timing t(B) 190 µs 3
Break recovery time t(BR) 40 µs 3
Host bit window timing t(CYCH) 190 µs 3
Host sends 1 time t(HW1) 17 50 µs 3
Host sends 0 time t(HW0) 100 145 µs 3
bq26500 to host response time t(RSPS) 190 320 µs 3
bq26500 bit window timing t(CYCD) 190 260 µs 3
bq26500 sends 1 time t(DW1) 32 50 µs 3
bq26500 sends 0 time t(DW0) 80 145 µs 3
Maximum number of EEPROM programming cycles 10 cycles 3
EEPROM data retention time 10 years TA = 85°C 3
POR threshold hysteresis 100 mV 2
Input impedance on BAT pin 10 MΩ 2
Input impedance on SRP, SRN pins 10 MΩ 2
Reported voltage resolution 1 mV 2
Voltage update time 2 s 2
Reported temperature resolution 0.25 °K 2
Temperature update time 2 s 2
Voltage-to-frequency converter gain variability 1 % Footnote (3): not a production tested parameter 3
EEPROM programming voltage rise time tRISE 1 ms 3
EEPROM programming voltage fall time tFALL 1 ms 3

CAD (KiCad official)

  • Symbol: BQ26500PWR
  • Footprint: Package_SO:TSSOP-8_4.4x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: bq26500pwr-etched.step / bq26500pwr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bq26500pwr.step / bq26500pwr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (33 pp, sha256 08b475b082295a94, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF