component
BQ25713RSNT
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Texas Instruments Battery Management, QFN-32-EP(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+70@@ -0,0 +1,70 @@+# BQ25713RSNT++**Texas Instruments** · Battery Management · QFN-32-EP(4x4)++BQ25713RSNT from Texas Instruments, in a QFN-32-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | VBUS | power_in | Charger input voltage (recommended operating range 0 V to 24 V), and a 1 Ω and 0.47 µF (minimum) input low-pass filter is recommended. |+| 2 | ACN | input | Input current-sense resistor negative input; an R-C low-pass filter is required between the sense resistor and ACN to suppress high-frequency noise, and ACP/ACN leakage is matched. |+| 3 | ACP | input | Input current-sense resistor positive input; an R-C low-pass filter is required between the sense resistor and ACP to suppress high-frequency noise, and ACP/ACN leakage is matched. |+| 4 | CHRG_OK | output | Active-high open-drain indicator that goes high when VBUS rises above 3.5 V (after 50 ms deglitch) or falls below 24.5 V, and goes low when VBUS falls below 3.2 V or rises above 26 V; pull up through 10 kΩ. |+| 5 | OTG/VAP | input | Active-high enable for OTG or VAP mode, selected by REG0x34[5] (OTG enabled with REG0x35[4]=1 when REG0x34[5]=1; VAP enabled when REG0x34[5]=0). |+| 6 | ILIM_HIZ | input | Input current-limit programming pin set by a resistor divider with V(ILIM_HIZ) = 1 V + 40 × IDPM × RAC; the device enters high-impedance mode below 0.4 V and exits above 0.8 V. |+| 7 | VDDA | power_in | Internal reference bias pin, fed from REGN through a 10 Ω resistor and decoupled to ground with a 1 µF ceramic capacitor. |+| 8 | IADPT | output | Adapter current monitor output, V(IADPT) = 20 or 40 × (V(ACP) - V(ACN)), clamped below 3.3 V, with a resistor to ground selected per inductor (137 kΩ for 2.2 µH) and a 100 pF or smaller decoupling capacitor. |+| 9 | IBAT | output | Battery current monitor output, V(IBAT) = 8 or 16 × (V(SRP) - V(SRN)) while charging, clamped below 3.3 V, with a 100 pF or smaller decoupling capacitor, and may be left floating if unused. |+| 10 | PSYS | output | Current-mode system power monitor output proportional to total adapter and battery power, clamped below 3.3 V, with a resistor to ground to generate the voltage and an optional parallel filter capacitor, and may be left floating if unused. |+| 11 | PROCHOT | output | Active-low open-drain processor hot indicator that monitors adapter current, battery discharge current and system voltage, with the minimum pulse width programmable in REG0x23[6:3]. |+| 12 | SDA | bidirectional | I2C open-drain data I/O; connect a 10 kΩ pull-up resistor per the I2C specification, with an input-low threshold of 0.4 V and input-high threshold of 1.3 V. |+| 13 | SCL | input | I2C clock input; connect a 10 kΩ pull-up resistor per the I2C specification, with an input-low threshold of 0.4 V and input-high threshold of 1.3 V. |+| 14 | CMPIN | input | Independent comparator input compared against an internal reference (selectable 2.3 V or 1.2 V); tie to ground if the comparator is not used. |+| 15 | CMPOUT | output | Independent comparator open-drain output that requires a pull-up to a supply rail, with reference, polarity and deglitch time selectable through I2C. |+| 16 | COMP1 | input | Buck-boost converter compensation pin 1; the RC network is specified in the BQ2571X EVM schematic. |+| 17 | COMP2 | input | Buck-boost converter compensation pin 2; the RC network is specified in the BQ2571X EVM schematic. |+| 18 | CELL_BATPRESZ | input | Cell-count selection input for 1 to 4 cell configurations biased from VDDA, which also sets SYSOVP to 5 V (1S), 12 V (2S) and 19.5 V (3S/4S), and battery removal is indicated when the pin falls below VCELL_BATPRESZ_FALL (15%). |+| 19 | SRN | input | Charge-current sense resistor negative input that is also used for battery voltage sensing, with an optional 0.1 µF common-mode capacitor to ground and a 0.1 µF differential capacitor to SRP. |+| 20 | SRP | input | Charge-current sense resistor positive input, with an optional 0.1 µF common-mode capacitor to ground and a 0.1 µF differential capacitor to SRN, and SRP/SRN leakage is matched. |+| 21 | BATDRV | output | P-channel battery FET (BATFET) gate driver output that turns the BATFET off when shorted to VSYS and fully on at 10 V below VSYS, with recommended Ciss of 1 nF to 3 nF and less than 5 nF allowed. |+| 22 | VSYS | power_in | Charger system voltage sense input, where the system voltage regulation limit is programmed in REG0x05/04 and REG0x0D/0C. |+| 23 | SW2 | passive | Boost-mode high-side MOSFET driver source connection to the source of the high-side N-channel MOSFET, rated from -2 V to 24 V for operation. |+| 24 | HIDRV2 | output | Boost-mode high-side power MOSFET (Q4) driver output connected to the high-side N-channel MOSFET gate. |+| 25 | BTST2 | power_in | Boost-mode high-side driver bootstrap supply, with a 0.047 µF capacitor connected between SW2 and BTST2 and an integrated bootstrap diode from REGN. |+| 26 | LODRV2 | output | Boost-mode low-side power MOSFET (Q3) driver output connected to the low-side N-channel MOSFET gate. |+| 27 | PGND | power_in | Device power ground. |+| 28 | REGN | power_out | 6 V linear regulator output powered from VBUS or VSYS that drives the power-stage gates, requiring a 2.2 µF or 3.3 µF ceramic capacitor to ground. |+| 29 | LODRV1 | output | Buck-mode low-side power MOSFET (Q2) driver output connected to the low-side N-channel MOSFET gate. |+| 30 | BTST1 | power_in | Buck-mode high-side driver bootstrap supply, with a 0.047 µF capacitor connected between SW1 and BTST1 and an integrated bootstrap diode from REGN. |+| 31 | HIDRV1 | output | Buck-mode high-side power MOSFET (Q1) driver output connected to the high-side N-channel MOSFET gate. |+| 32 | SW1 | passive | Buck-mode high-side MOSFET driver source connection to the source of the high-side N-channel MOSFET. |+| 33 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | Texas Instruments |+| Package | QFN-32-EP(4x4) |+| Category | Power Management (PMIC) |+| Pins | 33 |++## CAD (KiCad official)++- Symbol: `BQ25713RSNT`+- Footprint: `Package_DFN_QFN:QFN-32-1EP_4x4mm_P0.4mm_EP2.9x2.9mm`+- 3D model: QFN-32-EP(4x4) (KiCad packages3D, STEP)+- 3D model files: `bq25713rsnt-etched.step` / `bq25713rsnt-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bq25713rsnt.step` / `bq25713rsnt.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/bq25713b) (92 pp, sha256 `545440f19c8407fe`, retrieved 2026-10-08, tier: lcsc)+- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/bq25713rsnt-datasheet.pdf)
page.jsonadded+351@@ -0,0 +1,351 @@+{+ "slug": "bq25713rsnt",+ "version": "0.1.0",+ "type": "component",+ "description": "Texas Instruments Battery Management, QFN-32-EP(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "tags": [+ "component",+ "power management (pmic)",+ "bq25713rsnt",+ "factory-2.0.0",+ "extractor-text"+ ],+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "bq25713rsnt.kicad_sym",+ "bq25713rsnt.kicad_mod",+ "bq25713rsnt.glb",+ "bq25713rsnt.step",+ "bq25713rsnt.lbr",+ "docs/hero.png",+ "docs/bq25713rsnt-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html",+ "bq25713rsnt-hero.glb",+ "bq25713rsnt-hero.overlay.json"+ ],+ "component": {+ "mpn": "BQ25713RSNT",+ "manufacturer": "Texas Instruments",+ "package": "QFN-32-EP(4x4)",+ "pin_count": 33,+ "category": "Power Management (PMIC)",+ "subcategory": "Battery Management",+ "datasheet": "https://www.ti.com/cn/lit/gpn/bq25713b",+ "parts": {+ "symbol": "bq25713rsnt.kicad_sym",+ "footprint": "bq25713rsnt.kicad_mod",+ "model_3d": "bq25713rsnt-hero.glb",+ "model_3d_plain": "bq25713rsnt.glb",+ "model_3d_step": "bq25713rsnt-etched.step",+ "model_3d_step_plain": "bq25713rsnt.step",+ "lbr": "bq25713rsnt.lbr"+ },+ "distributor_links": {+ "lcsc": "C2878934",+ "digikey": "296-50241-2-ND",+ "mouser": "595-BQ25713RSNT"+ },+ "distributor_check": {+ "checked_at": "2026-10-08T03:43:03Z",+ "source": "Component Ocean /api/assign-pns",+ "digikey": {+ "pn": "296-50241-2-ND",+ "status": "found",+ "lifecycle": "Active"+ },+ "mouser": {+ "pn": "595-BQ25713RSNT",+ "status": "found"+ }+ },+ "pins": [+ {+ "number": "1",+ "name": "VBUS",+ "type": "power_in",+ "description": "Charger input voltage (recommended operating range 0 V to 24 V), and a 1 Ω and 0.47 µF (minimum) input low-pass filter is recommended."+ },+ {+ "number": "2",+ "name": "ACN",+ "type": "input",+ "description": "Input current-sense resistor negative input; an R-C low-pass filter is required between the sense resistor and ACN to suppress high-frequency noise, and ACP/ACN leakage is matched."+ },+ {+ "number": "3",+ "name": "ACP",+ "type": "input",+ "description": "Input current-sense resistor positive input; an R-C low-pass filter is required between the sense resistor and ACP to suppress high-frequency noise, and ACP/ACN leakage is matched."+ },+ {+ "number": "4",+ "name": "CHRG_OK",+ "type": "output",+ "description": "Active-high open-drain indicator that goes high when VBUS rises above 3.5 V (after 50 ms deglitch) or falls below 24.5 V, and goes low when VBUS falls below 3.2 V or rises above 26 V; pull up through 10 kΩ."+ },+ {+ "number": "5",+ "name": "OTG/VAP",+ "type": "input",+ "description": "Active-high enable for OTG or VAP mode, selected by REG0x34[5] (OTG enabled with REG0x35[4]=1 when REG0x34[5]=1; VAP enabled when REG0x34[5]=0)."+ },+ {+ "number": "6",+ "name": "ILIM_HIZ",+ "type": "input",+ "description": "Input current-limit programming pin set by a resistor divider with V(ILIM_HIZ) = 1 V + 40 × IDPM × RAC; the device enters high-impedance mode below 0.4 V and exits above 0.8 V."+ },+ {+ "number": "7",+ "name": "VDDA",+ "type": "power_in",+ "description": "Internal reference bias pin, fed from REGN through a 10 Ω resistor and decoupled to ground with a 1 µF ceramic capacitor."+ },+ {+ "number": "8",+ "name": "IADPT",+ "type": "output",+ "description": "Adapter current monitor output, V(IADPT) = 20 or 40 × (V(ACP) - V(ACN)), clamped below 3.3 V, with a resistor to ground selected per inductor (137 kΩ for 2.2 µH) and a 100 pF or smaller decoupling capacitor."+ },+ {+ "number": "9",+ "name": "IBAT",+ "type": "output",+ "description": "Battery current monitor output, V(IBAT) = 8 or 16 × (V(SRP) - V(SRN)) while charging, clamped below 3.3 V, with a 100 pF or smaller decoupling capacitor, and may be left floating if unused."+ },+ {+ "number": "10",+ "name": "PSYS",+ "type": "output",+ "description": "Current-mode system power monitor output proportional to total adapter and battery power, clamped below 3.3 V, with a resistor to ground to generate the voltage and an optional parallel filter capacitor, and may be left floating if unused."+ },+ {+ "number": "11",+ "name": "PROCHOT",+ "type": "output",+ "description": "Active-low open-drain processor hot indicator that monitors adapter current, battery discharge current and system voltage, with the minimum pulse width programmable in REG0x23[6:3]."+ },+ {+ "number": "12",+ "name": "SDA",+ "type": "bidirectional",+ "description": "I2C open-drain data I/O; connect a 10 kΩ pull-up resistor per the I2C specification, with an input-low threshold of 0.4 V and input-high threshold of 1.3 V."+ },+ {+ "number": "13",+ "name": "SCL",+ "type": "input",+ "description": "I2C clock input; connect a 10 kΩ pull-up resistor per the I2C specification, with an input-low threshold of 0.4 V and input-high threshold of 1.3 V."+ },+ {+ "number": "14",+ "name": "CMPIN",+ "type": "input",+ "description": "Independent comparator input compared against an internal reference (selectable 2.3 V or 1.2 V); tie to ground if the comparator is not used."+ },+ {+ "number": "15",+ "name": "CMPOUT",+ "type": "output",+ "description": "Independent comparator open-drain output that requires a pull-up to a supply rail, with reference, polarity and deglitch time selectable through I2C."+ },+ {+ "number": "16",+ "name": "COMP1",+ "type": "input",+ "description": "Buck-boost converter compensation pin 1; the RC network is specified in the BQ2571X EVM schematic."+ },+ {+ "number": "17",+ "name": "COMP2",+ "type": "input",+ "description": "Buck-boost converter compensation pin 2; the RC network is specified in the BQ2571X EVM schematic."+ },+ {+ "number": "18",+ "name": "CELL_BATPRESZ",+ "type": "input",+ "description": "Cell-count selection input for 1 to 4 cell configurations biased from VDDA, which also sets SYSOVP to 5 V (1S), 12 V (2S) and 19.5 V (3S/4S), and battery removal is indicated when the pin falls below VCELL_BATPRESZ_FALL (15%)."+ },+ {+ "number": "19",+ "name": "SRN",+ "type": "input",+ "description": "Charge-current sense resistor negative input that is also used for battery voltage sensing, with an optional 0.1 µF common-mode capacitor to ground and a 0.1 µF differential capacitor to SRP."+ },+ {+ "number": "20",+ "name": "SRP",+ "type": "input",+ "description": "Charge-current sense resistor positive input, with an optional 0.1 µF common-mode capacitor to ground and a 0.1 µF differential capacitor to SRN, and SRP/SRN leakage is matched."+ },+ {+ "number": "21",+ "name": "BATDRV",+ "type": "output",+ "description": "P-channel battery FET (BATFET) gate driver output that turns the BATFET off when shorted to VSYS and fully on at 10 V below VSYS, with recommended Ciss of 1 nF to 3 nF and less than 5 nF allowed."+ },+ {+ "number": "22",+ "name": "VSYS",+ "type": "power_in",+ "description": "Charger system voltage sense input, where the system voltage regulation limit is programmed in REG0x05/04 and REG0x0D/0C."+ },+ {+ "number": "23",+ "name": "SW2",+ "type": "passive",+ "description": "Boost-mode high-side MOSFET driver source connection to the source of the high-side N-channel MOSFET, rated from -2 V to 24 V for operation."+ },+ {+ "number": "24",+ "name": "HIDRV2",+ "type": "output",+ "description": "Boost-mode high-side power MOSFET (Q4) driver output connected to the high-side N-channel MOSFET gate."+ },+ {+ "number": "25",+ "name": "BTST2",+ "type": "power_in",+ "description": "Boost-mode high-side driver bootstrap supply, with a 0.047 µF capacitor connected between SW2 and BTST2 and an integrated bootstrap diode from REGN."+ },+ {+ "number": "26",+ "name": "LODRV2",+ "type": "output",+ "description": "Boost-mode low-side power MOSFET (Q3) driver output connected to the low-side N-channel MOSFET gate."+ },+ {+ "number": "27",+ "name": "PGND",+ "type": "power_in",+ "description": "Device power ground."+ },+ {+ "number": "28",+ "name": "REGN",+ "type": "power_out",+ "description": "6 V linear regulator output powered from VBUS or VSYS that drives the power-stage gates, requiring a 2.2 µF or 3.3 µF ceramic capacitor to ground."+ },+ {+ "number": "29",+ "name": "LODRV1",+ "type": "output",+ "description": "Buck-mode low-side power MOSFET (Q2) driver output connected to the low-side N-channel MOSFET gate."+ },+ {+ "number": "30",+ "name": "BTST1",+ "type": "power_in",+ "description": "Buck-mode high-side driver bootstrap supply, with a 0.047 µF capacitor connected between SW1 and BTST1 and an integrated bootstrap diode from REGN."+ },+ {+ "number": "31",+ "name": "HIDRV1",+ "type": "output",+ "description": "Buck-mode high-side power MOSFET (Q1) driver output connected to the high-side N-channel MOSFET gate."+ },+ {+ "number": "32",+ "name": "SW1",+ "type": "passive",+ "description": "Buck-mode high-side MOSFET driver source connection to the source of the high-side N-channel MOSFET."+ },+ {+ "number": "33",+ "name": "EP",+ "type": "passive",+ "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.3",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.3",+ "primary_model": "claude-haiku-5-5",+ "primary_mode": "text",+ "consensus_model": "claude-sonnet-5-5",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [+ "extractor flagged: The exposed thermal pad below the IC is listed in the datasheet pin table with no pin number, so it ; The datasheet gives PWR/I/O/O/GND classes only in the pin table, not KiCad ERC types. Types were map; The source datasheet is in Chinese; descriptions were translated into English from the Chinese text,",+ "exposed pad 33 added from the footprint"+ ],+ "pages_sent": 60,+ "cost_usd": 0.3357,+ "at": "2026-10-08T03:42:47"+ },+ "datasheet": {+ "url": "https://www.ti.com/cn/lit/gpn/bq25713b",+ "pages": 92,+ "sha256": "545440f19c8407fe",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 33,+ "described": 33,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ },+ "models_3d": [+ {+ "file": "bq25713rsnt.step",+ "role": "plain",+ "up": "Z",+ "units": "mm",+ "origin": "footprint origin = pad-pattern centre",+ "seat": "z = 0",+ "extents_mm": [+ 4,+ 4,+ 0.6+ ],+ "zmin_mm": 0,+ "centre_offset_mm": 0,+ "footprint_binding": "identity",+ "sha256": "7b482a511cdf2cf875c31931f9fea7f745b8dac2ea6203531cd6604f40a290cb",+ "checked": "2026-10-08",+ "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"+ },+ {+ "file": "bq25713rsnt-etched.step",+ "role": "eda",+ "up": "Z",+ "units": "mm",+ "origin": "footprint origin = pad-pattern centre",+ "seat": "z = 0",+ "extents_mm": [+ 4,+ 4,+ 0.6+ ],+ "zmin_mm": 0,+ "centre_offset_mm": 0,+ "footprint_binding": "identity",+ "sha256": "1f6ece6a5436cded239e5527e0bed0acf01e2342601b660107fb821cb31cb2e8",+ "checked": "2026-10-08",+ "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"+ }+ ]+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}