component
BQ25713RSNR
Public Made by Adomby adom
Texas Instruments Battery Management, QFN-32-EP(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBQ25713RSNR
Texas Instruments · Battery Management · QFN-32-EP(4x4)
BQ25713RSNR from Texas Instruments, in a QFN-32-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VBUS | power_in | Charger input voltage from adapter with 3.5V to 24V operating range. |
| 2 | ACN | passive | Input current detection resistor negative input with matched leakage current to ACP pin. |
| 3 | ACP | passive | Input current detection resistor positive input with matched leakage current to ACN pin. |
| 4 | CHRG_OK | output | Open drain active high indicator output, high when valid input present, low when VBUS <3.2V or >26V with 50ms deglitch. |
| 5 | OTG/VAP | input | Active high enable input for OTG or VAP mode operation based on register REG0x34[5] and REG0x35[4] settings. |
| 6 | ILIM_HIZ | input | Input current limit setting pin with voltage range 1.15V to 4.0V; enters high impedance mode below 0.4V. |
| 7 | VDDA | power_in | Internal reference bias pin requiring 1μF ceramic capacitor to ground for signal conditioning. |
| 8 | IADPT | output | Adapter current monitor output with selectable 20V/V or 40V/V gain, clamped to 3.3V maximum output voltage. |
| 9 | IBAT | output | Battery current monitor output with selectable 8V/V or 16V/V gain for charge/discharge current, clamped to 3.3V. |
| 10 | PSYS | output | System power monitor output current proportional to total input and battery power, gain selectable to 1μA/W or 0.25μA/W. |
| 11 | PROCHOT | output | Low active open drain output for processor thermal throttling, monitors adapter current, battery discharge current, and system voltage. |
| 12 | SDA | bidirectional | I2C open drain data I/O line requiring 10kΩ pull-up resistor; supports standard and fast mode up to 400kbit/s. |
| 13 | SCL | input | I2C clock input requiring 10kΩ pull-up resistor; supports standard and fast mode up to 400kbit/s. |
| 14 | CMPIN | input | Independent comparator input with internal 1.2V or 2.3V threshold reference selectable via REG0x30[7]. |
| 15 | CMPOUT | output | Independent comparator open drain output with programmable deglitch time from 1μs to 5s via REG0x30[5:4]. |
| 16 | COMP1 | passive | Buck/boost converter error amplifier compensation network connection pin 1. |
| 17 | COMP2 | passive | Buck/boost converter error amplifier compensation network connection pin 2. |
| 18 | CELL_BATPRESZ | input | Cell configuration detection pin biased from REGN; determines 1S to 4S battery selection and sets SYSOVP threshold (5V to 19.5V). |
| 19 | SRN | passive | Charge current detection resistor negative input also used for battery voltage sensing with matched leakage to SRP. |
| 20 | SRP | passive | Charge current detection resistor positive input with matched leakage current to SRN pin for dual-function sensing. |
| 21 | BATDRV | output | P-channel battery MOSFET gate driver output with 10V drive voltage when fully on; enables ideal diode in supplement mode. |
| 22 | VSYS | power_in | System voltage sensing connection for output regulation with range 1.024V to 19.2V and integrated OVP protection. |
| 23 | SW2 | passive | Boost mode high-side MOSFET driver source node connection to Q4 source terminal. |
| 24 | HIDRV2 | output | Boost mode high-side MOSFET (Q4) gate driver output connecting to high-side N-channel MOSFET gate. |
| 25 | BTST2 | power_in | Boost mode bootstrap supply for high-side gate driver requiring 0.047μF capacitor between SW2 and BTST2. |
| 26 | LODRV2 | output | Boost mode low-side MOSFET (Q3) gate driver output connecting to low-side N-channel MOSFET gate. |
| 27 | PGND | power_in | Device power ground connection to PCB ground plane and thermal pad ground plane via multiple vias. |
| 28 | REGN | power_in | 6V linear regulator output requiring 2.2μF to 3.3μF ceramic capacitor for stability; powers gate drivers. |
| 29 | LODRV1 | output | Buck mode low-side MOSFET (Q2) gate driver output connecting to low-side N-channel MOSFET gate. |
| 30 | BTST1 | power_in | Buck mode bootstrap supply for high-side gate driver requiring 0.047μF capacitor between SW1 and BTST1. |
| 31 | HIDRV1 | output | Buck mode high-side MOSFET (Q1) gate driver output connecting to high-side N-channel MOSFET gate. |
| 32 | SW1 | passive | Buck mode high-side MOSFET driver source node connection to Q1 source terminal. |
| 33 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | QFN-32-EP(4x4) |
| Category | Power Management (PMIC) |
| Pins | 33 |
CAD (KiCad official)
- Symbol:
BQ25713RSNR - Footprint:
Package_DFN_QFN:QFN-32-1EP_4x4mm_P0.4mm_EP2.9x2.9mm - 3D model: QFN-32-EP(4x4) (KiCad packages3D, STEP)
- 3D model files:
bq25713rsnr-etched.step/bq25713rsnr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bq25713rsnr.step/bq25713rsnr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (92 pp, sha256
545440f19c8407fe, retrieved 2026-09-24, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).