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BQ25616JRTWT
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Texas Instruments Battery Management, WQFN-24(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+62@@ -0,0 +1,62 @@+# BQ25616JRTWT++**Texas Instruments** · Battery Management · WQFN-24(4x4)++BQ25616JRTWT from Texas Instruments, in a WQFN-24(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | VAC | power_in | Charger input voltage sensing; an optional external n-channel ACFET is placed between VAC and VBUS, and VAC is connected to VBUS if the ACFET is not used. The ACFET turns on when VAC is below the 14.2 V ACOV threshold and above UVLO. |+| 2 | ACDRV | output | Charge pump output that drives an external N-channel ACFET, providing 6 V above VBUS as gate drive; leave floating if external OVP is not used. |+| 3 | D+ | bidirectional | Positive line of the USB data pair used for D+/D- based host/charging port detection (DCD, BC1.2 primary and secondary detection, and nonstandard adapters). |+| 4 | D- | bidirectional | Negative line of the USB data pair used for D+/D- based host/charging port detection (DCD, BC1.2 primary and secondary detection, and nonstandard adapters). |+| 5 | STAT | output | Open-drain status output that must be pulled up to a logic rail through 10 kΩ; LOW indicates charge in progress, HIGH indicates charge complete or SLEEP, and 1 Hz blinking indicates charge suspend (fault). Sink current is limited to 6 mA. |+| 6 | OTG | input | Boost mode enable pin; boost mode is enabled when pulled HIGH, and the pin must not be left floating. |+| 7 | PG | output | Open-drain active-low power-good output, pulled up through 10 kΩ; LOW indicates a good input when VIN is between UVLO and ACOV, above the SLEEP threshold, and input current limit is above 30 mA. Sink current is limited to 6 mA. |+| 8 | ILIM | input | Sets the input current limit via a resistor to ground (IINDPM = KILIM/RILIM) when the adapter is detected as unknown; acceptable range is 500 mA to 3200 mA. |+| 9 | CE | input | Charge enable pin; battery charging is enabled when this pin is driven LOW. |+| 10 | ICHG | input | Sets the charge current limit via a resistor to ground (ICHG = KICHG/RICHG); acceptable charge current range is 300 mA to 3000 mA. |+| 11 | TS | input | Battery temperature qualification input for an NTC thermistor, with a resistor divider from REGN to TS to GND; charge and boost are suspended when the TS voltage is out of range (10 kΩ resistors to REGN and GND when unused). |+| 12 | VSET | input | Sets the default battery charge voltage via a resistor to GND: float = 4.208 V, short to GND = 4.352 V, 5 kΩ to 25 kΩ = 4.100 V. |+| 13 | BAT | power_in | Battery connection to the positive terminal of the battery pack; the internal current sense resistor is between SYS and BAT, and a 10 µF capacitor should be placed close to this pin. |+| 14 | BAT | power_in | Battery connection to the positive terminal of the battery pack; the internal current sense resistor is between SYS and BAT, and a 10 µF capacitor should be placed close to this pin. |+| 15 | SYS | power_out | System output connection point; the internal current sense resistor is between SYS and BAT, and a 10 µF (min) capacitor should be placed close to this pin. |+| 16 | SYS | power_out | System output connection point; the internal current sense resistor is between SYS and BAT, and a 10 µF (min) capacitor should be placed close to this pin. |+| 17 | GND | power_in | Power ground and signal ground. |+| 18 | GND | power_in | Power ground and signal ground. |+| 19 | SW | power_out | Switching node connecting to the output inductor, internally tied to the HSFET source and LSFET drain; connect the 0.047 µF bootstrap capacitor from SW to BTST. |+| 20 | SW | power_out | Switching node connecting to the output inductor, internally tied to the HSFET source and LSFET drain; connect the 0.047 µF bootstrap capacitor from SW to BTST. |+| 21 | BTST | power_in | PWM high-side driver positive supply, connected internally to the bootstrap diode cathode; connect the 0.047 µF bootstrap capacitor from SW to BTST. |+| 22 | REGN | power_out | PWM low-side driver positive supply output, connected to the bootstrap diode anode; connect a 4.7 µF (10 V rated) ceramic capacitor from REGN to analog GND close to the IC. |+| 23 | PMID | power_out | Connected to the drain of the reverse blocking MOSFET (RBFET) and the drain of HSFET; place a 10 µF capacitor from PMID to GND. |+| 24 | VBUS | power_in | Charger input voltage; the internal RBFET is between VBUS (source) and PMID, and a 1 µF ceramic capacitor should be placed from VBUS to GND as close as possible to the device. |+| 25 | PAD | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | Texas Instruments |+| Package | WQFN-24(4x4) |+| Category | Power Management (PMIC) |+| Pins | 25 |++## CAD (KiCad official)++- Symbol: `BQ25616JRTWT`+- Footprint: `Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.7x2.7mm`+- 3D model: WQFN-24(4x4) (KiCad packages3D, STEP)+- 3D model files: `bq25616jrtwt-etched.step` / `bq25616jrtwt-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bq25616jrtwt.step` / `bq25616jrtwt.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/bq25616) (50 pp, sha256 `7be49ad55a7694f6`, retrieved 2026-10-08, tier: lcsc)+- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/bq25616jrtwt-datasheet.pdf)
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The ACFET turns on when VAC is below the 14.2 V ACOV threshold and above UVLO."+ },+ {+ "number": "2",+ "name": "ACDRV",+ "type": "output",+ "description": "Charge pump output that drives an external N-channel ACFET, providing 6 V above VBUS as gate drive; leave floating if external OVP is not used."+ },+ {+ "number": "3",+ "name": "D+",+ "type": "bidirectional",+ "description": "Positive line of the USB data pair used for D+/D- based host/charging port detection (DCD, BC1.2 primary and secondary detection, and nonstandard adapters)."+ },+ {+ "number": "4",+ "name": "D-",+ "type": "bidirectional",+ "description": "Negative line of the USB data pair used for D+/D- based host/charging port detection (DCD, BC1.2 primary and secondary detection, and nonstandard adapters)."+ },+ {+ "number": "5",+ "name": "STAT",+ "type": "output",+ "description": "Open-drain status output that must be pulled up to a logic rail through 10 kΩ; LOW indicates charge in progress, HIGH indicates charge complete or SLEEP, and 1 Hz blinking indicates charge suspend (fault). Sink current is limited to 6 mA."+ },+ {+ "number": "6",+ "name": "OTG",+ "type": "input",+ "description": "Boost mode enable pin; boost mode is enabled when pulled HIGH, and the pin must not be left floating."+ },+ {+ "number": "7",+ "name": "PG",+ "type": "output",+ "description": "Open-drain active-low power-good output, pulled up through 10 kΩ; LOW indicates a good input when VIN is between UVLO and ACOV, above the SLEEP threshold, and input current limit is above 30 mA. Sink current is limited to 6 mA."+ },+ {+ "number": "8",+ "name": "ILIM",+ "type": "input",+ "description": "Sets the input current limit via a resistor to ground (IINDPM = KILIM/RILIM) when the adapter is detected as unknown; acceptable range is 500 mA to 3200 mA."+ },+ {+ "number": "9",+ "name": "CE",+ "type": "input",+ "description": "Charge enable pin; battery charging is enabled when this pin is driven LOW."+ },+ {+ "number": "10",+ "name": "ICHG",+ "type": "input",+ "description": "Sets the charge current limit via a resistor to ground (ICHG = KICHG/RICHG); acceptable charge current range is 300 mA to 3000 mA."+ },+ {+ "number": "11",+ "name": "TS",+ "type": "input",+ "description": "Battery temperature qualification input for an NTC thermistor, with a resistor divider from REGN to TS to GND; charge and boost are suspended when the TS voltage is out of range (10 kΩ resistors to REGN and GND when unused)."+ },+ {+ "number": "12",+ "name": "VSET",+ "type": "input",+ "description": "Sets the default battery charge voltage via a resistor to GND: float = 4.208 V, short to GND = 4.352 V, 5 kΩ to 25 kΩ = 4.100 V."+ },+ {+ "number": "13",+ "name": "BAT",+ "type": "power_in",+ "description": "Battery connection to the positive terminal of the battery pack; the internal current sense resistor is between SYS and BAT, and a 10 µF capacitor should be placed close to this pin."+ },+ {+ "number": "14",+ "name": "BAT",+ "type": "power_in",+ "description": "Battery connection to the positive terminal of the battery pack; the internal current sense resistor is between SYS and BAT, and a 10 µF capacitor should be placed close to this pin."+ },+ {+ "number": "15",+ "name": "SYS",+ "type": "power_out",+ "description": "System output connection point; the internal current sense resistor is between SYS and BAT, and a 10 µF (min) capacitor should be placed close to this pin."+ },+ {+ "number": "16",+ "name": "SYS",+ "type": "power_out",+ "description": "System output connection point; the internal current sense resistor is between SYS and BAT, and a 10 µF (min) capacitor should be placed close to this pin."+ },+ {+ "number": "17",+ "name": "GND",+ "type": "power_in",+ "description": "Power ground and signal ground."+ },+ {+ "number": "18",+ "name": "GND",+ "type": "power_in",+ "description": "Power ground and signal ground."+ },+ {+ "number": "19",+ "name": "SW",+ "type": "power_out",+ "description": "Switching node connecting to the output inductor, internally tied to the HSFET source and LSFET drain; connect the 0.047 µF bootstrap capacitor from SW to BTST."+ },+ {+ "number": "20",+ "name": "SW",+ "type": "power_out",+ "description": "Switching node connecting to the output inductor, internally tied to the HSFET source and LSFET drain; connect the 0.047 µF bootstrap capacitor from SW to BTST."+ },+ {+ "number": "21",+ "name": "BTST",+ "type": "power_in",+ "description": "PWM high-side driver positive supply, connected internally to the bootstrap diode cathode; connect the 0.047 µF bootstrap capacitor from SW to BTST."+ },+ {+ "number": "22",+ "name": "REGN",+ "type": "power_out",+ "description": "PWM low-side driver positive supply output, connected to the bootstrap diode anode; connect a 4.7 µF (10 V rated) ceramic capacitor from REGN to analog GND close to the IC."+ },+ {+ "number": "23",+ "name": "PMID",+ "type": "power_out",+ "description": "Connected to the drain of the reverse blocking MOSFET (RBFET) and the drain of HSFET; place a 10 µF capacitor from PMID to GND."+ },+ {+ "number": "24",+ "name": "VBUS",+ "type": "power_in",+ "description": "Charger input voltage; the internal RBFET is between VBUS (source) and PMID, and a 1 µF ceramic capacitor should be placed from VBUS to GND as close as possible to the device."+ },+ {+ "number": "25",+ "name": "PAD",+ "type": "passive",+ "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.3",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.3",+ "primary_model": "claude-haiku-5-5",+ "primary_mode": "text",+ "consensus_model": "claude-sonnet-5-5",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [+ "extractor flagged: The WQFN package has an exposed thermal pad (ground reference, also the heat path) that is not given; KiCad has no AIO class; D+ and D- (printed as analog input/output) are mapped to bidirectional. Pin ; Several pin types are judgment calls because the datasheet only gives P (power) or AI/AO/DI/DO: BAT ",+ "exposed pad 25 added from the footprint"+ ],+ "pages_sent": 13,+ "cost_usd": 0.0927,+ "at": "2026-10-08T20:19:26"+ },+ "datasheet": {+ "url": "https://www.ti.com/cn/lit/gpn/bq25616",+ "pages": 50,+ "sha256": "7be49ad55a7694f6",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 25,+ "described": 25,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ },+ "models_3d": [+ {+ "file": "bq25616jrtwt.step",+ "role": "plain",+ "up": "Z",+ "units": "mm",+ "origin": "footprint origin = pad-pattern centre",+ "seat": "z = 0",+ "extents_mm": [+ 4,+ 4,+ 0.77+ ],+ "zmin_mm": 0,+ "centre_offset_mm": 0,+ "footprint_binding": "identity",+ "sha256": "f7d256794c4147daf24dcae0554fae18510315e565ad1e239b475be7fef80d8b",+ "checked": "2026-10-08",+ "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"+ },+ {+ "file": "bq25616jrtwt-etched.step",+ "role": "eda",+ "up": "Z",+ "units": "mm",+ "origin": "footprint origin = pad-pattern centre",+ "seat": "z = 0",+ "extents_mm": [+ 4,+ 4,+ 0.77+ ],+ "zmin_mm": 0,+ "centre_offset_mm": 0,+ "footprint_binding": "identity",+ "sha256": "8ee149704e324c6cc9247ae980ca6dd26aa75c52a59c63c788926cd2eb81e062",+ "checked": "2026-10-08",+ "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"+ }+ ]+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}