component
BQ25606RGER
Public Made by Adomby adom
Texas Instruments Battery Management, VQFN-24-EP(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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page.json+16−13@@ -54,7 +54,7 @@ }, { "number": "4",- "name": "D\u2013",+ "name": "D–", "type": "bidirectional", "description": "Negative line of USB data pair for BC1.2 and nonstandard adapter detection to determine input current limit; voltage range -0.3V to 7V." },@@ -74,7 +74,7 @@ "number": "7", "name": "PG", "type": "tri_state",- "description": "Open-drain active-low power good indicator; outputs LOW when input voltage between UVLO and ACOV, above sleep threshold, and input current >30mA; requires 10k\u03a9 pull-up resistor."+ "description": "Open-drain active-low power good indicator; outputs LOW when input voltage between UVLO and ACOV, above sleep threshold, and input current >30mA; requires 10kΩ pull-up resistor." }, { "number": "8",@@ -92,7 +92,7 @@ "number": "10", "name": "ICHG", "type": "input",- "description": "Analog input to set charge current limit via resistor to ground; ICHG = KICHG/RICHG with acceptable range 300mA to 3000mA and \u00b16% regulation accuracy."+ "description": "Analog input to set charge current limit via resistor to ground; ICHG = KICHG/RICHG with acceptable range 300mA to 3000mA and ±6% regulation accuracy." }, { "number": "11",@@ -104,13 +104,13 @@ "number": "12", "name": "VSET", "type": "input",- "description": "Analog input to set default battery charge voltage via resistor pull-down to GND: >50k\u03a9 yields 4.208V, <500\u03a9 yields 4.352V, 5-25k\u03a9 yields 4.400V; regulation accuracy \u00b10.5%."+ "description": "Analog input to set default battery charge voltage via resistor pull-down to GND: >50kΩ yields 4.208V, <500Ω yields 4.352V, 5-25kΩ yields 4.400V; regulation accuracy ±0.5%." }, { "number": "13", "name": "BAT", "type": "power_in",- "description": "Battery positive terminal connection point; internal current sensing resistor connected between SYS and BAT with 19.5m\u03a9 on-resistance; connect 10\u00b5F capacitor closely to pin."+ "description": "Battery positive terminal connection point; internal current sensing resistor connected between SYS and BAT with 19.5mΩ on-resistance; connect 10µF capacitor closely to pin." }, { "number": "14",@@ -122,7 +122,7 @@ "number": "15", "name": "SYS", "type": "power_out",- "description": "Converter regulated output connection point maintaining system voltage typically 50mV above battery or clamped at 3.5V minimum; internal current sensing resistor between SYS and BAT; connect 20\u00b5F capacitor close to pin."+ "description": "Converter regulated output connection point maintaining system voltage typically 50mV above battery or clamped at 3.5V minimum; internal current sensing resistor between SYS and BAT; connect 20µF capacitor close to pin." }, { "number": "16",@@ -146,7 +146,7 @@ "number": "19", "name": "SW", "type": "passive",- "description": "Switching node connecting to output inductor; internally connected to source of HSFET and drain of LSFET; connect 0.047\u00b5F bootstrap capacitor from SW to BTST; voltage range -2V to 16V."+ "description": "Switching node connecting to output inductor; internally connected to source of HSFET and drain of LSFET; connect 0.047µF bootstrap capacitor from SW to BTST; voltage range -2V to 16V." }, { "number": "20",@@ -158,31 +158,31 @@ "number": "21", "name": "BTST", "type": "power_in",- "description": "Bootstrap voltage supply for high-side MOSFET gate drive; internally connected to bootstrap diode cathode; connect 0.047\u00b5F capacitor from SW to BTST; voltage range 0-22V absolute, -0.3 to 7V relative to SW."+ "description": "Bootstrap voltage supply for high-side MOSFET gate drive; internally connected to bootstrap diode cathode; connect 0.047µF capacitor from SW to BTST; voltage range 0-22V absolute, -0.3 to 7V relative to SW." }, { "number": "22", "name": "REGN", "type": "power_out",- "description": "Regulated voltage output for gate drive and internal bias circuits; supplies bias rail to TS external resistors; output voltage 5.6-6.65V at 9V input or 4.6-4.9V at 5V input; connect 4.7\u00b5F (10V) ceramic capacitor close to IC."+ "description": "Regulated voltage output for gate drive and internal bias circuits; supplies bias rail to TS external resistors; output voltage 5.6-6.65V at 9V input or 4.6-4.9V at 5V input; connect 4.7µF (10V) ceramic capacitor close to IC." }, { "number": "23", "name": "PMID", "type": "passive",- "description": "Power path mid-point node connected to drain of RBFET and HSFET in buck converter; connect 10\u00b5F ceramic capacitor between PMID and GND; voltage range -0.3V to 22V."+ "description": "Power path mid-point node connected to drain of RBFET and HSFET in buck converter; connect 10µF ceramic capacitor between PMID and GND; voltage range -0.3V to 22V." }, { "number": "24", "name": "VBUS", "type": "power_in",- "description": "Charger input voltage from USB/adapter with operating range 3.9V to 13.5V and absolute maximum 22V; internal RBFET connected between VBUS and PMID; place 1\u00b5F ceramic capacitor from VBUS to GND close to IC."+ "description": "Charger input voltage from USB/adapter with operating range 3.9V to 13.5V and absolute maximum 22V; internal RBFET connected between VBUS and PMID; place 1µF ceramic capacitor from VBUS to GND close to IC." }, { "number": "25", "name": "Thermal Pad", "type": "power_in",- "description": "Exposed pad providing electrical ground connection and low thermal impedance heat dissipation path from die to PCB ground plane; junction-to-board thermal resistance 9.2\u00b0C/W; must be soldered to ground with sufficient thermal vias."+ "description": "Exposed pad providing electrical ground connection and low thermal impedance heat dissipation path from die to PCB ground plane; junction-to-board thermal resistance 9.2°C/W; must be soldered to ground with sufficient thermal vias." } ], "provenance": {@@ -260,5 +260,8 @@ "docs/bq25606rger-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }