component
BQ25302RTER
Public Made by Adomby adom
Texas Instruments Battery Management ICs, WQFN-16-EP(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownBQ25302RTER
Texas Instruments · Battery Management ICs · WQFN-16-EP(3x3)
BQ25302RTER from Texas Instruments, in a WQFN-16-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VBUS | power_in | Charger input voltage (4.1 V to 6.2 V operating, 28 V abs max) with the reverse-blocking MOSFET between VBUS and PMID; place a 2.2 µF ceramic capacitor from VBUS to GND as close to the IC as possible. |
| 2 | REGN | power_out | Low-side FET driver positive supply output; connect a 2.2 µF ceramic capacitor from REGN to GND close to the IC. |
| 3 | STAT | output | Open-drain charge status output, connected to REGN via a current-limiting resistor and LED: LOW while charging, open when charge complete or disabled, blinks on fault. |
| 4 | ICHG | input | Charge current program input; connect a 1% resistor to ground to set ICHG = 40,000 / RICHG, no capacitor allowed, and charging stops if the pin is open or shorted to ground. |
| 5 | POL | input | This pin must be left floating. |
| 6 | EN | input | Device disable input; the device is enabled with EN floating or pulled low and disabled when EN is pulled high. |
| 7 | TS | input | Battery temperature protection voltage input for an NTC thermistor (103AT-2 recommended) with a resistor divider from REGN to TS to GND; charge suspends when out of range, and if unused use 10 kΩ from REGN to TS and 10 kΩ from TS to GND. |
| 8 | NC | unconnected | No connection; keep this pin floating or grounded. |
| 9 | VSET | input | Charge voltage setting input programmed by a pull-down resistor to GND: floating 4.1 V, short to GND 4.2 V, 51 kΩ 4.35 V, 10 kΩ 4.4 V, with maximum 50 pF capacitance allowed. |
| 10 | BAT | input | Battery voltage sensing input connected to the positive battery terminal and inductor output node, with a 10 µF capacitor recommended. |
| 11 | GND | power_in | Ground, connected directly to the thermal pad on the top layer, with a single-point connection between power and analog ground near the IC GND pins. |
| 12 | GND | power_in | Ground, connected directly to the thermal pad on the top layer, with a single-point connection between power and analog ground near the IC GND pins. |
| 13 | SW | power_out | Switching node connected to the output inductor, internally the HSFET source and LSFET drain, with a 0.047 µF bootstrap capacitor from SW to BTST. |
| 14 | SW | power_out | Switching node connected to the output inductor, internally the HSFET source and LSFET drain, with a 0.047 µF bootstrap capacitor from SW to BTST. |
| 15 | BTST | passive | High-side FET driver supply connected internally to the bootstrap diode cathode; connect a 0.047 µF bootstrap capacitor from SW to BTST. |
| 16 | PMID | passive | Connection to the drain of the reverse-blocking MOSFET and the high-side MOSFET; place a 10 µF ceramic capacitor from PMID to GND as close to the IC as possible. |
| 17 | Thermal Pad | power_in | Ground reference and thermal pad that conducts heat from the device, to be tied externally to a ground plane through vias under the pad. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WQFN-16-EP(3x3) |
| Category | Power Supply Chip |
| Pins | 17 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VBUS voltage (converter not switching) | VBUS | -2 | 28 | V | converter not switching | 6 | |
| PMID voltage | PMID | -0.3 | 28 | V | converter not switching | 6 | |
| SW voltage | SW | -2 | 20 | V | -3V for 10ns transient | 6 | |
| BTST voltage | BTST | -0.3 | 25.5 | V | 6 | ||
| STAT voltage | STAT | -0.3 | 5.5 | V | 6 | ||
| BAT voltage | BAT | -0.3 | 11 | V | 6 | ||
| BTST to SW voltage | -0.3 | 5.5 | V | 6 | |||
| ICHG pin voltage | ICHG | -0.3 | 5.5 | V | 6 | ||
| REGN voltage | REGN | -0.3 | 5.5 | V | 6 | ||
| POL voltage | POL | -0.3 | 5.5 | V | 6 | ||
| EN voltage | /EN | -0.3 | 5.5 | V | 6 | ||
| TS voltage | TS | -0.3 | 5.5 | V | 6 | ||
| VSET voltage | VSET | -0.3 | 11 | V | 11V DC, up to 13V for max 100us | 6 | |
| STAT output sink current | 6 | mA | 6 | ||||
| REGN output sink current | 20 | mA | 6 | ||||
| Junction temperature | TJ | -40 | 150 | °C | 6 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 6 | ||
| ESD HBM | V(ESD) | -2000 | 2000 | V | HBM, all pins | 6 | |
| ESD CDM | V(ESD) | -250 | 250 | V | CDM, all pins | 6 | |
| Input voltage | VVBUS | 4.1 | 6.2 | V | 6 | ||
| Battery voltage | VBAT | 4.4 | V | 6 | |||
| Input current | IVBUS | 2 | A | 6 | |||
| Output current (SW) | ISW | 2 | A | 6 | |||
| Ambient temperature | TA | -40 | 85 | °C | 6 | ||
| Effective inductance | L | 0.7 | 1 | µH | 6 | ||
| Effective VBUS capacitance | CVBUS | 1.1 | 2.2 | µF | 6 | ||
| Effective PMID capacitance | CPMID | 5 | 10 | µF | 7 | ||
| Effective BAT capacitance | CBAT | 5 | 10 | µF | 7 | ||
| Junction-to-ambient thermal resistance | RθJA | 45.8 | °C/W | JEDEC | 7 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 48.5 | °C/W | 7 | |||
| Junction-to-board thermal resistance | RθJB | 19 | °C/W | 7 | |||
| Junction-to-top characterization parameter | ΨJT | 1.3 | °C/W | 7 | |||
| Junction-to-board characterization parameter | ΨJB | 19 | °C/W | 7 | |||
| Junction-to-case (bottom) thermal resistance | RθJC(bot) | 7.9 | °C/W | 7 | |||
| VBUS reverse current from BAT/SW to VBUS | IVBUS_REVS | 0.07 | 3 | µA | VBAT = VSW = 4.5V, VBUS shorted to GND, TJ = -40°C - 85°C | 7 | |
| VBUS leakage current in disable mode | IQ_VBUS_DIS | 4.1 | µA | VBUS = 5V, VBAT = 4V, charger disabled, /EN pulled high, TJ = -40°C - 85°C | 7 | ||
| Leakage current from battery in disable mode | IQ_BAT_DIS | 1 | µA | VBUS = 5V, VBAT = 4V, charger disabled, POL grounded, /EN floating, TJ = -40°C - 65°C | 7 | ||
| BAT and SW pin leakage current in HiZ mode | IQ_BAT_HIZ | 0.17 | 1 | µA | VBAT = VSW = 4.5V, VBUS floating, TJ = -40°C - 65°C | 7 | |
| VBUS operating range | VVBUS_OP | 4.1 | 6.2 | V | 7 | ||
| VBUS power on reset | VVBUS_UVLOZ | 3 | 3.8 | V | VBUS rising | 7 | |
| VBUS power on reset hysteresis | VVBUS_UVLOZ_HYS | 250 | mV | VBUS falling | 7 | ||
| Condition to turn on REGN | VVBUS_LOWV | 3.8 | 3.9 | 4 | V | VBUS rising, REGN turns on, VBAT = 3.2V | 7 |
| REGN turn-on hysteresis | VVBUS_LOWV_HYS | 300 | mV | VBUS falling, REGN turns off, VBAT = 3.2V | 7 | ||
| Enter sleep mode threshold | VSLEEP | 30 | 60 | 100 | mV | VBUS falling, VBUS - VBAT, VVBUS_LOWV < VBAT < VBATREG | 7 |
| Exit sleep mode threshold | VSLEEPZ | 110 | 157 | 250 | mV | VBUS rising, VBUS - VBAT, VVBUS_LOWV < VBAT < VBATREG | 7 |
| VBUS overvoltage rising threshold | VVBUS_OVP_RISE | 6.2 | 6.4 | 6.6 | V | VBUS rising, converter stops switching | 7 |
| VBUS overvoltage falling hysteresis | VVBUS_OVP_HYS | 500 | mV | VBUS falling, converter stops switching | 7 | ||
| Q1 on-resistance VBUS to PMID | RDSON_Q1 | 40 | 65 | mΩ | VREGN = 5V | 7 | |
| Q2 high-side on-resistance | RDSON_Q2 | 50 | 82 | mΩ | VREGN = 5V | 7 | |
| Q3 low-side on-resistance | RDSON_Q3 | 45 | 72 | mΩ | VREGN = 5V | 8 | |
| Charge voltage regulation (VSET floating) | VBATREG | 4.078 | 4.1 | 4.118 | V | VSET pin floating, TJ = -40°C to +85°C | 8 |
| Charge voltage regulation (VSET grounded) | VBATREG | 4.178 | 4.2 | 4.218 | V | VSET pin is grounded, TJ = -40°C to +85°C | 8 |
| Charge voltage regulation (VSET 51kΩ) | VBATREG | 4.328 | 4.35 | 4.371 | V | Connect VSET pin to 51kΩ resistor, TJ = -40°C to +85°C | 8 |
| Charge voltage regulation (VSET 10kΩ) | VBATREG | 4.376 | 4.4 | 4.418 | V | Connect VSET pin to 10kΩ resistor, TJ = -40°C to +85°C | 8 |
| Charge current regulation 1.72A | ICHG | 1.55 | 1.72 | 1.89 | A | ICHG set at 1.72A with RICHG=23.2kΩ, VBAT = 3.8V, VBUS = 5V | 8 |
| Charge current regulation 1.0A | ICHG | 0.9 | 1 | 1.1 | A | ICHG set at 1.0A with RICHG=40.2kΩ, VBAT = 3.8V, VBUS = 5V | 8 |
| Charge current regulation 0.5A | ICHG | 0.4 | 0.517 | 0.6 | A | ICHG set at 0.5A with RICHG=78.7kΩ, VBAT = 3.8V, VBUS = 5V | 8 |
| Termination current (1.72A) | ITERM | 138 | 172 | 206 | mA | ICHG = 1.72A, 10% of ICHG, RICHG=23.2kΩ, BATREG = 4.2V, VBUS = 5V | 8 |
| Termination current (1.0A) | ITERM | 70 | 100 | 130 | mA | ICHG = 1.0A, 10% of ICHG, RICHG=40.2kΩ, BATREG = 4.2V, VBUS = 5V | 8 |
| Termination current (500mA) | ITERM | 33 | 63 | 93 | mA | ICHG=500mA, ITERM =63mA RICHG=78.7kΩ, BATREG = 4.2V, VBUS = 5V | 8 |
| Precharge current (RICHG=23.2kΩ) | IPRECHG | 115 | 172 | 225 | mA | ICHG = 1.72A, 10% of ICHG, RICHG=23.2kΩ, VBATREG = 4.2V, VBAT = 2.5V, VBUS = 5V | 8 |
| Precharge current (RICHG=40.2kΩ) | IPRECHG | 50 | 100 | 150 | mA | ICHG = 1.72A, 10% of ICHG, RICHG=40.2kΩ, VBATREG = 4.2V, VBAT = 2.5V, VBUS = 5V | 8 |
| Precharge current (RICHG=78.7kΩ) | IPRECHG | 28 | 63 | 98 | mA | ICHG = 1.72A, 10% of ICHG, RICHG=78.7kΩ, VBATREG = 4.2V, VBAT = 2.5V, VBUS = 5V | 8 |
| VBAT short rising threshold | VBAT_SHORT_RISE | 2.05 | 2.2 | 2.35 | V | Short to precharge | 8 |
| VBAT short falling threshold | VBAT_SHORT_FALL | 1.85 | 2 | 2.15 | V | Precharge to battery short | 8 |
| Battery short current | IBAT_SHORT | 24 | 30 | 36 | mA | VBAT < VBAT_SHORT_FALL, VBUS = 5V | 8 |
| VBAT low-voltage rising threshold | VBAT_LOWV_RISE | 2.9 | 3 | 3.1 | V | Precharge to fast charge | 8 |
| VBAT low-voltage falling threshold | VBAT_LOWV_FALL | 2.6 | 2.7 | 2.8 | V | Fast charge to precharge | 8 |
| Recharge hysteresis below VBATREG | VRECHG_HYS | 110 | 160 | 216 | mV | VBAT falling | 8 |
| Minimum input voltage regulation | VINDPM_MIN | 4 | 4.07 | 4.2 | V | VBAT = 3.5V, measured at PMID pin | 8 |
| Input voltage regulation | VINDPM | 4.15 | 4.28 | 4.41 | V | VBAT = 4V, measured at PMID pin, VINDPM = 1.044*VBAT + 0.125V | 8 |
| Input current regulation | IINDPM_2A_5V | 2.1 | 2.25 | 2.4 | A | VVBUS = 5V | 8 |
| Battery overvoltage rising threshold | VBAT_OVP_RISE | 101.9 | 103.5 | 105 | % | VBAT rising, as percentage of VBATREG | 8 |
| Battery overvoltage falling threshold | VBAT_OVP_FALL | 100 | 101.6 | 103.1 | % | VBAT falling, as percentage of VBATREG | 8 |
| Bootstrap refresh comparator threshold | VBTST_REFRESH | 2.7 | 3 | 3.3 | V | (VBTST - VSW) when LSFET refresh pulse is requested, VBUS = 5V | 9 |
| HSFET cycle by cycle over current limit threshold | IHSFET_OCP | 5.2 | 6.2 | 6.7 | A | 9 | |
| Junction temperature regulation accuracy | TREG | 111 | 120 | 133 | °C | 9 | |
| PWM switching frequency | FSW | 1.02 | 1.2 | 1.38 | MHz | SW node frequency | 9 |
| ICHG pin regulated voltage | VICHG | 993 | 998 | 1003 | mV | 9 | |
| RICHG threshold to clamp precharge and termination current | RICHG_HIGH | 60 | 65 | 70 | kΩ | RICHG > RICHG_HIGH | 9 |
| Charge current ratio (1.72A) | KICHG | 36000 | 40000 | 44000 | AxΩ | ICHG set at 1.72A with RICHG = 23.2kΩ, VBAT=3.8V, VBUS=5V, ICHG = KICHG / RICHG | 9 |
| Charge current ratio (1.0A) | KICHG | 36000 | 40280 | 44000 | AxΩ | ICHG set at 1.0A with RICHG = 40.2kΩ, VBAT = 3.8V, VBUS = 5V, ICHG = KICHG / RICHG | 9 |
| Charge current ratio (0.5A) | KICHG | 32000 | 40700 | 48000 | AxΩ | ICHG set at 0.5A with RICHG = 78.7kΩ, VBAT = 3.8V, VBUS = 5V, ICHG = KICHG / RICHG | 9 |
| TCOLD threshold rising | VT1% | 72.68 | 73.5 | 74.35 | % | VTS rising, as percentage to VREGN | 9 |
| TCOLD threshold falling | VT1% | 70.68 | 71.5 | 72.33 | % | VTS falling As Percentage to VREGN | 9 |
| THOT threshold falling | VT3% | 46.35 | 47.25 | 48.15 | % | VTS falling, as percentage to VREGN | 9 |
| THOT threshold rising | VT3% | 47.35 | 48.25 | 49.15 | % | VTS rising As percentage to VREGN | 10 |
| Fast charge safety timer | tSAFETY_FAST | 15 | 20 | 24 | hr | Fast charge safety timer 20 hours | 10 |
| Precharge safety timer | tSAFETY_PRE | 1.5 | 2 | 2.5 | hr | Precharge safety timer | 10 |
| Input low threshold | VILO | 0.4 | V | Falling | 10 | ||
| Input high threshold | VIH | 1.3 | V | Rising | 10 | ||
| High-level leakage current at /EN pin | IBIAS | 1 | µA | /EN pin is pulled up to 1.8 V | 10 | ||
| VBUS OVP reaction time | tVBUS_OV | 200 | ns | VBUS rising above VBUS_OV threshold to converter turnoff | 10 | ||
| Delay from enable at /EN pin to charger power on | tCHG_ON_EN | 245 | ms | /EN pin voltage rising | 10 | ||
| Delay from VBUS to charge start | tCHG_ON_VBUS | 275 | ms | /EN pin is grounded, batttery present | 10 | ||
| STAT pin sink current | ISTAT_SINK | 6 | mA | 9 | |||
| Thermal shutdown rising threshold | TSHUT | 150 | °C | Temperature increasing | 9 | ||
| Maximum PWM duty cycle | DMAX | 97 | % | 9 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | • Place input capacitor as close as possible to PMID pin and GND pin and use shortest copper trace | 27 |
CAD (KiCad official)
- Symbol:
BQ25302RTER - Footprint:
Package_DFN_QFN:QFN-16-1EP_3x3mm_P0.5mm_EP1.7x1.7mm - 3D model: WQFN-16-EP(3x3) (KiCad packages3D, STEP)
- 3D model files:
bq25302rter-etched.step/bq25302rter-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bq25302rter.step/bq25302rter.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (38 pp, sha256
b57f7cefbc2b08bd, retrieved 2026-10-22, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).