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BQ25070DQCT

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Texas Instruments Battery Management, WSON-10-EP(2x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BQ25070DQCT

Texas Instruments · Battery Management · WSON-10-EP(2x3)

BQ25070DQCT from Texas Instruments, in a WSON-10-EP(2x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IN power_in Input power supply connected to the external DC supply (AC adapter or USB port), which must be bypassed to GND with at least a 0.1 µF ceramic capacitor; recommended operating range is 3.75 V to 28 V with 10.5 V input over-voltage protection (absolute maximum 30 V).
2 IMON output Current monitoring output where a 1 kΩ resistor from IMON to GND sets a voltage from 0 V to 1 V corresponding to an input current of 0 A to 1 A.
3 GND power_in Ground terminal that must be connected to the thermal pad and the circuit ground plane.
4 LDO power_out LDO output regulated to 4.9 V that drives up to 50 mA, bypassed to GND with a 0.1 µF ceramic capacitor, and enabled when VUVLO < VIN < VOVP.
5 TS input Battery pack NTC monitoring input that connects to the center tap of a resistor divider from LDO to GND with the NTC in parallel with the bottom resistor to set the charge temperature window.
6 BAT power_out Battery connection output and sense input that must be connected to the battery and bypassed to GND with a 1 µF ceramic capacitor.
7 CTRL input Single-input interface that is driven with pulses to enable/disable the device, enable/disable VIN-DPM, and select the input current limit.
8 CHG output Open-drain charge status output that is pulled low while charging and goes high impedance when the battery is fully charged, with ICHG required to stay below 5 mA.
9 GND power_in Ground terminal that must be connected to the thermal pad and the circuit ground plane.
10 OUT power_out System output connection that must be tied to BAT and bypassed to GND with a 1 µF ceramic capacitor.
11 PAD passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WSON-10-EP(2x3)
Category Power Management (PMIC)
Pins 11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
IN voltage range VIN 3.75 28 V 2
IN operating voltage range VIN 3.75 10.2 V 2
Input current, IN IIN 1 A 2
Output current in charge mode, OUT IOUT 1 A 2
Junction temperature TJ 0 125 °C 2
Input voltage IN (with respect to GND) -0.3 30 V 2
Voltage CTRL, TS (with respect to GND) -0.3 7 V 2
Voltage BAT, OUT, LDO, CHG, IMON (with respect to GND) -0.3 7 V 2
Input current (continuous) IN 1.2 A 2
Output current (continuous) BAT 1.2 A 2
Output current (continuous) LDO 100 mA 2
Output sink current CHG 5 mA 2
Junction temperature TJ -40 150 °C 2
Storage temperature TSTG -65 150 °C 2
Under-voltage lock-out VUVLO 3.15 3.3 3.55 V VIN: 0 V → 4 V 3
Valid input source threshold, input power good if VIN > VBAT + VIN-SLP VIN-SLP 30 75 150 mV VBAT = 3.6 V, VIN: 3.5 V → 4 V 3
Hysteresis on VIN-SLP VHYS-INSLP 18 32 54 mV VBAT = 3.6 V, VIN: 4 V → 3.5 V 3
Input over-voltage protection threshold VOVP 10.2 10.5 10.8 V VIN: 5 V → 11 V 3
Battery float charge voltage VBAT(REG) 3.465 3.5 3.535 V TA = 0°C to 125°C 3
Battery float charge voltage VBAT(REG) 3.465 3.5 3.529 V TA = 25°C 3
Battery overcharge voltage threshold VBAT(OVCH) 3.62 3.7 3.78 V 3
Input current limit (selected by CTRL interface) IIN(LIM) 87 93 100 mA 4 pulses on CTRL 3
Input current limit (selected by CTRL interface) IIN(LIM) 174 187 200 mA 5 pulses on CTRL 3
Input current limit (selected by CTRL interface) IIN(LIM) 261 280 300 mA 6 pulses on CTRL 3
Input current limit (selected by CTRL interface) IIN(LIM) 348 374 400 mA 7 pulses on CTRL 3
Input current limit (selected by CTRL interface) IIN(LIM) 435 467 500 mA 8 pulses on CTRL 3
Input current limit (selected by CTRL interface) IIN(LIM) 608 654 700 mA 9 pulses on CTRL 3
Input current limit (selected by CTRL interface) IIN(LIM) 739 794 850 mA 10 pulses on CTRL 3
Input current limit (selected by CTRL interface) IIN(LIM) 869 935 1000 mA 11 pulses on CTRL 3
VIN, VOUT dropout VDO(IN-OUT) 500 1400 mV VIN = 3.5 V, IOUT = 0.75 A 3
Maximum IMON voltage VIMON(MAX) 1.2 1.25 V IMON open 3
IMON accuracy IMON -25 25 % IIN < 100 mA 3
IMON accuracy IMON -10 10 % IIN = 100 mA to 1 A 3
Pre-charge to fast-charge transition threshold VLOWV 2.4 2.5 2.6 V 3
Precharge current to BAT during precharge mode IPRECHARGE 41.5 45 48.5 mA VBAT = 0 V to 0.7 V 4
Recharge detection threshold VRCH 3.1 3.3 3.5 V VBAT falling 4
LDO output voltage VLDO 4.7 4.9 5.1 V VIN = 5 V to 10.5 V, ILDO = 0 mA to 50 mA 4
Dropout voltage VDO 200 350 mV VIN = 4.5V, ILDO = 50mA 4
High duration on CTRL tHI_MIN 50 1000 μs 4
Low time duration on CTRL tLO_MIN 50 1000 μs 4
TS cold threshold VCOLD 24.5 25 25.5 %VLDO VTS rising 4
TS hot threshold VHOT 12 12.5 13 %VLDO VTS falling 4
Quiescent current (row label missing in extracted text) 120 150 μA VIN = 0 V, VCHG = High, TS Enabled 3
Battery current into BAT, no input connected IBAT(PDWN) 6 μA VIN = 0 V, VCHG = Low, TS Disabled, TJ = 85°C 3
Standby current into IN pin IIN(STDBY) 0.25 mA CTRL = HI, VIN = 5.5V 3
Standby current into IN pin IIN(STDBY) 0.5 mA CTRL = HI, VIN ≤ VOVP 3
Standby current into IN pin IIN(STDBY) 2 mA CTRL = HI, VIN > VOVP 3
Active supply current, IN pin ICC 3 mA VIN = 6 V, No load on OUT pin, VBAT > VBAT(REG), IC enabled 3
Maximum LDO output current ILDO 60 mA 4
CTRL pulldown resistor RPULLDOWN 260 kΩ 4
Logic LOW input voltage VIL 0.4 V 4
Logic HIGH input voltage VIH 1.4 V 4
TS cold cutoff threshold VCUTOFF 1 %VLDO VTS falling 4
CHG output LOW voltage VOL 0.45 V ISINK = 1 mA 4
Temperature regulation limit TJ(REG) 125 °C TJ rising 4
Thermal shutdown temperature TJ(OFF) 155 °C TJ rising 4
Thermal shutdown hysteresis TJ(OFF-HYS) 20 °C TJ falling 4
Input current monitor ratio KIMON 1 mA/A RIMON = 1kΩ, current programmed using CTRL 3
Junction-to-ambient thermal resistance θJA 58.7 °C/W 2
Junction-to-case (top) thermal resistance θJCtop 3.9 °C/W 2

CAD (KiCad official)

  • Symbol: BQ25070DQCT
  • Footprint: Package_SON:WSON-10-1EP_2x3mm_P0.5mm_EP0.84x2.4mm
  • 3D model: WSON-10-EP(2x3) (KiCad packages3D, STEP)
  • 3D model files: bq25070dqct-etched.step / bq25070dqct-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bq25070dqct.step / bq25070dqct.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (22 pp, sha256 6ee178215c499079, retrieved 2026-10-21, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF