# BQ24610RGET

**Texas Instruments** · Battery Management ICs · VQFN-24-EP(4x4)

BQ24610RGET from Texas Instruments, in a VQFN-24-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ACN | input | Adapter current-sense resistor negative input, with a 0.1-μF ceramic capacitor from ACN to ACP for differential-mode filtering and an optional 0.1-μF capacitor from ACN to GND for common-mode filtering. |
| 2 | ACP | input | Adapter current-sense resistor positive input, with a 0.1-μF ceramic capacitor from ACN to ACP for differential-mode filtering and a 0.1-μF capacitor from ACP to GND for common-mode filtering. |
| 3 | ACDRV | output | AC adapter-to-system MOSFET driver output, connected through a 1-kΩ resistor to the gates of the ACFET and reverse-blocking P-channel MOSFETs, with internal break-before-make logic with respect to BATDRV. |
| 4 | CE | input | Charge enable active-HIGH logic input, where HIGH enables charge and LOW disables it, with an internal 1-MΩ pulldown resistor. |
| 5 | STAT1 | output | Open-drain charge status output that indicates charger operation as defined in Table 2 (ON during charge in progress). |
| 6 | TS | input | Temperature qualification voltage input for a battery-pack NTC thermistor, with the hot and cold window programmed by a resistor divider from VREF to TS to GND; the absolute maximum rating is -0.3 V to 7 V. |
| 7 | TTC | input | Safety timer and termination control input, with a capacitor from TTC to GND setting the timer; when LOW the timer and termination are disabled, and when HIGH the timer is disabled but termination is allowed. |
| 8 | PG | output | Open-drain power-good status output that is active LOW when VCC is valid (not in UVLO, ACOV, or SLEEP mode) and active HIGH when VCC is invalid. |
| 9 | STAT2 | output | Open-drain charge status output that indicates charger operation as defined in Table 2 (ON during charge complete). |
| 10 | VREF | power_out | 3.3-V regulated voltage output that requires a 1-μF ceramic capacitor to GND close to the IC and can be used to program voltage, current, and the TS threshold. |
| 11 | ISET1 | input | Fast-charge current-set input whose voltage programs the fast-charge current regulation set point; the absolute maximum rating is 3.6 V and the recommended maximum is 3.3 V. |
| 12 | VFB | input | Output voltage analog feedback input, fed from a resistive divider on the battery terminals to set the battery regulation voltage, with a series resistor required if the battery pack voltage may exceed 16 V. |
| 13 | SRN | input | Charge current-sense resistor negative input, with a 0.1-μF ceramic capacitor from SRN to SRP for differential-mode filtering and an optional 0.1-μF capacitor from SRN to GND for common-mode filtering. |
| 14 | SRP | input | Charge current-sense resistor positive input, with a 0.1-μF ceramic capacitor from SRN to SRP for differential-mode filtering and a 0.1-μF capacitor from SRP to GND for common-mode filtering. |
| 15 | ISET2 | input | Precharge and termination current-set input whose voltage programs the precharge current regulation set point and the termination current trigger point. |
| 16 | ACSET | input | Adapter current-set input whose voltage programs the input current regulation set point during Dynamic Power Management (DPM). |
| 17 | GND | power_in | Low-current sensitive analog and digital ground, to be connected to the thermal pad underneath the IC on the PCB. |
| 18 | REGN | power_out | PWM low-side driver positive 6-V supply output, requiring a 1-μF ceramic capacitor to GND close to the IC and a small-signal Schottky diode to BTST for the bootstrap. |
| 19 | LODRV | output | PWM low-side driver output, connected to the gate of the low-side power MOSFET with a short trace; the absolute maximum rating is -0.3 V to 7 V relative to GND. |
| 20 | PH | passive | PWM high-side driver negative supply, connected to the phase-switching node (low-side MOSFET drain, high-side MOSFET source, and output inductor); the recommended range is -2 V to 30 V. |
| 21 | HIDRV | output | PWM high-side driver output, connected to the gate of the high-side power MOSFET with a short trace; the recommended range with respect to GND is -0.3 V to 34 V. |
| 22 | BTST | power_in | PWM high-side driver positive supply, with a 0.1-μF bootstrap capacitor from PH to BTST and a bootstrap Schottky diode from REGN to BTST; the recommended range with respect to GND is -0.3 V to 34 V. |
| 23 | BATDRV | output | Battery-to-system MOSFET driver output, connected through a 1-kΩ resistor to the gate of the input BAT P-channel MOSFET, with internal break-before-make logic with respect to ACDRV. |
| 24 | VCC | power_in | IC power positive supply, connected through a 10-Ω resistor to the diode-OR common-source point, with a 1-μF ceramic capacitor from VCC to the GND pin close to the IC; the BQ24610 recommended range is -0.3 V to 28 V. |
| 25 | Thermal pad | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | VQFN-24-EP(4x4) |
| Category | Power Supply Chip |
| Pins | 25 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VCC, ACP, ACN, SRP, SRN, BATDRV, ACDRV, CE, STAT1, STAT2, PG |  | -0.3 |  | 33 | V | over operating free-air temperature range (unless otherwise noted) | 5 |
| PH |  | -2 |  | 36 | V | over operating free-air temperature range (unless otherwise noted) | 5 |
| VFB |  | -0.3 |  | 16 | V | over operating free-air temperature range (unless otherwise noted) | 5 |
| REGN, LODRV, ACSET, TS, TTC |  | -0.3 |  | 7 | V | over operating free-air temperature range (unless otherwise noted) | 5 |
| BTST, HIDRV with respect to GND |  | -0.3 |  | 39 | V | over operating free-air temperature range (unless otherwise noted) | 5 |
| VREF, ISET1, ISET2 |  | -0.3 |  | 3.6 | V | over operating free-air temperature range (unless otherwise noted) | 5 |
| Maximum difference voltage ACP-ACN, SRP-SRN |  | -0.5 |  | 0.5 | V |  | 5 |
| Junction temperature | TJ | -40 |  | 155 | °C |  | 5 |
| Storage temperature | Tstg | -55 |  | 155 | °C |  | 5 |
| BQ24610: VCC, ACP, ACN, SRP, SRN, BATDRV, ACDRV, CE, STAT1, STAT2, PG |  | -0.3 |  | 28 | V |  | 6 |
| PH |  | -2 |  | 30 | V |  | 6 |
| VFB |  | -0.3 |  | 14 | V |  | 6 |
| REGN, LODRV, ACSET, TS, TTC |  | -0.3 |  | 6.5 | V |  | 6 |
| BTST, HIDRV with respect to GND |  | -0.3 |  | 34 | V |  | 6 |
| ISET1, ISET2 |  | -0.3 |  | 3.3 | V |  | 6 |
| Maximum difference voltage ACP-ACN, SRP-SRN |  | -0.2 |  | 0.2 | V |  | 6 |
| Junction temperature (recommended) | TJ | 0 |  | 125 | °C |  | 6 |
| VCC input voltage operating range (610) | VVCC_OP | 5 |  | 28 | V |  | 7 |
| Total battery discharge current (sum of currents into VCC, BTST, PH, ACP, ACN, SRP, SRN, VFB) | IBAT |  |  | 15 | μA | VFB ≤ 2.1 V; VVCC < VSRN, VVCC > VUVLO (SLEEP) | 7 |
| Battery discharge current (sum of currents into BTST, PH, SRP, SRN, VFB) |  |  |  | 5 | μA | VFB ≤ 2.1 V; VVCC > VSRN, VVCC > VUVLO, CE = LOW | 7 |
| Battery discharge current (sum of currents into BTST, PH, SRP, SRN, VFB), charge done |  |  |  | 5 | μA | VFB ≤ 2.1 V; VVCC > VSRN, VVCC > VVCCLOW, CE = HIGH, charge done | 7 |
| Adapter supply current (current into VCC, ACP, ACN pin), IC quiescent | IAC |  | 1 | 1.5 | mA | VVCC > VSRN, VVCC > VUVLO, CE = LOW (IC quiescent current) | 7 |
| Adapter supply current (current into VCC, ACP, ACN pin), charge done | IAC |  | 2 | 5 | mA | VVCC > VSRN, VVCC >VVCCLOW, CE = HIGH, charge done | 7 |
| Adapter supply current (current into VCC, ACP, ACN pin), charging | IAC |  |  | 25 | mA | VVCC > VSRN, VVCC >VVCCLOW, CE = HIGH, charging, Qg_total = 20 nC | 7 |
| Charge voltage regulation accuracy |  | -0.5 |  | 0.5 | % | TJ = 0°C to 85°C | 7 |
| Charge voltage regulation accuracy |  | -0.7 |  | 0.7 | % | TJ = -40°C to 125°C | 7 |
| Leakage current into VFB pin | IVFB |  |  | 100 | nA | VFB = 2.1 V | 7 |
| SRP-SRN current-sense voltage range | VIREG_CHG |  |  | 100 | mV | VIREG_CHG = VSRP, VSRN | 7 |
| Charge current regulation accuracy |  | -3 |  | 3 | % | VIREG_CHG = 40 mV | 7 |
| Charge current regulation accuracy |  | -4 |  | 4 | % | VIREG_CHG = 20 mV | 7 |
| Charge current regulation accuracy |  | -25 |  | 25 | % | VIREG_CHG = 5 mV | 7 |
| Charge current regulation accuracy |  | -40 |  | 40 | % | VIREG_CHG = 1.5 mV (VSRN > 3.1 V) | 7 |
| Precharge current regulation accuracy |  | -4 |  | 4 | % | VIREG_PRECH = 20 mV | 7 |
| Precharge current regulation accuracy |  | -25 |  | 25 | % | VIREG_PRECH = 5 mV | 7 |
| Precharge current regulation accuracy |  | -55 |  | 55 | % | VIREG_PRECH = 1.5 mV (VSRN < 3.1 V) | 7 |
| Termination current accuracy |  | -4 |  | 4 | % | VITERM = 20 mV | 8 |
| Termination current accuracy |  | -25 |  | 25 | % | VITERM = 5 mV | 8 |
| Termination current accuracy |  | -45 |  | 45 | % | VITERM = 1.5 mV | 8 |
| Input current regulation accuracy |  | -3 |  | 3 | % | VIREG_DPM = 40 mV | 8 |
| Input current regulation accuracy |  | -4 |  | 4 | % | VIREG_DPM = 20 mV | 8 |
| Input current regulation accuracy |  | -25 |  | 25 | % | VIREG_DPM = 5 mV | 8 |
| ACP-ACN current-sense voltage range | VIREG_DPM |  |  | 100 | mV | VIREG_DPM = VACP, VACN | 8 |
| AC undervoltage rising threshold | VUVLO | 3.65 | 3.85 | 4 | V | Measure on VCC | 8 |
| SLEEP falling threshold | VSLEEP_FALL | 40 | 100 | 150 | mV | VVCC, VSRN to enter SLEEP | 8 |
| ACN to SRN falling threshold | VACN-SRN_FALL | 100 | 200 | 310 | mV | VACN, VSRN to turn on BATFET | 8 |
| Precharge to fast-charge transition (LOWV threshold) | VLOWV | 1.534 | 1.55 | 1.566 | V | Measured on VFB pin, rising | 8 |
| AC overvoltage rising threshold on VCC (BQ24610) | VACOV | 31.04 | 32 | 32.96 | V |  | 9 |
| Cold temperature rising threshold | VLTF | 72.5 | 73.5 | 74.5 | % | As Percentage to VVREF | 9 |
| Hot temperature rising threshold | VHTF | 36.2 | 37 | 37.8 | % | As Percentage to VVREF | 9 |
| VREF regulator voltage | VVREF_REG | 3.267 | 3.3 | 3.333 | V | VVCC > VUVLO, (0- to 35-mA load) | 10 |
| REGN regulator voltage | VREGN_REG | 5.7 | 6 | 6.3 | V | VVCC > 10 V, CE = HIGH, (0- to 40-mA load) | 10 |
| Precharge safety timer range |  | 1440 | 1800 | 2160 | s | Precharge time before fault occurs | 10 |
| Fast charge safety timer range, with +/- 10% accuracy | TCHARGE | 1 |  | 10 | h | Tchg = CTTC × KTTC | 10 |
| Fast charge timer accuracy |  | -10 |  | 10 | % | 0.01 μF ≤ CTTC ≤ 0.11 μF | 10 |
| PWM switching frequency |  | 510 | 600 | 690 | kHz |  | 11 |
| Junction-to-ambient thermal resistance | RθJA |  | 43 |  | °C/W | RGE [VQFN], 24 pins | 6 |
| Junction-to-case (top) thermal resistance | RθJC(top) |  | 54.3 |  | °C/W | RGE [VQFN], 24 pins | 6 |
| Junction-to-board thermal resistance | RθJB |  | 20 |  | °C/W | RGE [VQFN], 24 pins | 6 |
| Junction-to-case (bottom) thermal resistance | RθJC(bot) |  | 4 |  | °C/W | RGE [VQFN], 24 pins | 6 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper |  | 3. Place the inductor input terminal as close as possible to the switching MOSFET output terminal. Minimize the copper area of this trace to lower electrical and magnetic field radiation, but make the | 34 |

## CAD (KiCad official)

- Symbol: `BQ24610RGET`
- Footprint: `Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm`
- 3D model: VQFN-24-EP(4x4) (KiCad packages3D, STEP)
- 3D model files: `bq24610rget-etched.step` / `bq24610rget-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bq24610rget.step` / `bq24610rget.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/bq24610) (45 pp, sha256 `3ae7b6131566362b`, retrieved 2026-10-30, tier: manufacturer)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bq24610rget-datasheet.pdf)