component
BQ24313DSGR
Public Made by Adomby adom
Texas Instruments Battery Management ICs, WSON-8-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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| bq24313dsgr-etched.step | 3d ago |
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BQ24313DSGR
Texas Instruments · Battery Management ICs · WSON-8-EP(2x2)
BQ24313DSGR from Texas Instruments, in a WSON-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IN | power_in | Input power; connect to the external DC supply and bypass to VSS with a 1µF ceramic capacitor (minimum). |
| 2 | VSS | power_in | Ground terminal; must be connected to ground at all times. |
| 3 | NC | unconnected | May have internal circuits used for test purposes; do not make any external connection for normal operation. |
| 4 | FAULT | output | Open-drain active-low status output that goes low when input FET Q1 is off due to input overvoltage, input overcurrent, battery overvoltage, or thermal shutdown, and is high impedance in normal operation; needs a pullup resistor. |
| 5 | CE | input | Active-low chip enable input; CE high disables the IC and turns the input FET off, CE low is normal operation, and it is internally pulled down. |
| 6 | VBAT | power_in | Battery voltage sense input; connect to the battery pack positive terminal through a resistor. |
| 7 | ILIM | passive | Input overcurrent threshold programming; connect a resistor (15 to 90 kΩ) from ILIM to VSS to set the threshold, IOCP = 25 ÷ R(ILIM) (A, kΩ). |
| 8 | OUT | power_out | Output terminal to the charging system; connect to the external load and bypass to VSS with a 1µF ceramic capacitor (minimum). |
| 9 | PAD | passive | Exposed thermal pad internally connected to VSS; must be connected to the same potential as VSS on the PCB and not used as the primary ground input. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-8-EP(2x2) |
| Category | Power Supply Chip |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage range | VIN | 3.3 | 30 | V | 2 | ||
| Input current, IN pin | IIN | 1.5 | A | 2 | |||
| Output current, OUT pin | IOUT | 1.5 | A | 2 | |||
| OCP programming resistor | R(ILIM) | 15 | 90 | kΩ | 2 | ||
| Junction temperature (operating) | TJ | -40 | 125 | °C | 2 | ||
| IN input voltage | VI | -0.3 | 30 | V | IN with respect to VSS | 2 | |
| OUT input voltage | VI | -0.3 | 12 | V | OUT with respect to VSS | 2 | |
| ILIM, FAULT, CE, VBAT voltage | VI | -0.3 | 7 | V | with respect to VSS | 2 | |
| Input current IN | II | 2 | A | IN | 2 | ||
| Output current OUT | IO | 2 | A | OUT | 2 | ||
| Output sink current FAULT | 15 | mA | FAULT | 2 | |||
| ESD HBM | 2000 | V | All, JESD22-A114-E | 2 | |||
| ESD MM | 200 | V | All, JESD22-A115-E | 2 | |||
| ESD CDM | 500 | V | All, JESD22-C101-C | 2 | |||
| ESD IEC 61000-4-2 air | 15 | kV | IN bypassed to VSS with 1-µF low-ESR ceramic, air discharge | 2 | |||
| ESD IEC 61000-4-2 contact | 8 | kV | IN bypassed to VSS with 1-µF low-ESR ceramic, contact | 2 | |||
| Junction temperature (abs max) | TJ | -40 | 150 | °C | 2 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 2 | ||
| Thermal resistance junction-to-case | RθJC | 5 | °C/W | DSG 2×2 SON | 2 | ||
| Thermal resistance junction-to-ambient | RθJA | 75 | °C/W | DSG 2×2 SON | 2 | ||
| Undervoltage lock-out threshold | UVLO | 2.6 | 2.7 | 2.8 | V | CE = Low, VIN increasing from 0V to 3V | 3 |
| Hysteresis on UVLO | Vhys(UVLO) | 200 | 260 | 300 | mV | CE = Low, VIN decreasing from 3V to 0V | 3 |
| Deglitch time, input power detected | tDGL(PGOOD) | 8 | ms | CE = Low. Time measured from VIN 0V → 5V rise-time 1µs, to output turning ON | 3 | ||
| Operating current | IDD | 400 | 600 | µA | CE = Low, No load on OUT pin, VIN = 5V, R(ILIM) = 25kΩ | 3 | |
| Standby current | ISTDBY | 65 | 95 | µA | CE = High, VIN = 5V | 3 | |
| Drop-out voltage IN to OUT | VDO | 170 | 280 | mV | CE = Low, VIN = 5V, IOUT = 1A | 3 | |
| Output voltage | VO(REG) | 5.67 | 5.85 | 6.03 | V | CE = Low, VIN = 6.5V, IOUT = 1A, bq24313 | 3 |
| Input overvoltage protection threshold | VOVP | 10.2 | 10.5 | 10.8 | V | CE = Low, VIN increasing from 5V to 11V, bq24313 | 3 |
| Input OV propagation delay | tPD(OVP) | 200 | ns | CE = Low; not tested in production, specified by design | 3 | ||
| Hysteresis on OVP | Vhys(OVP) | 60 | 120 | 180 | mV | CE = Low, VIN decreasing from 11V to 5V, bq24313 | 3 |
| Recovery time from input overvoltage | tON(OVP) | 8 | ms | CE = Low, Time measured from VIN 7.5V → 5V, 1µs fall-time | 3 | ||
| Input overcurrent protection threshold range | IOCP | 300 | 1500 | mA | 3 | ||
| Input overcurrent protection threshold | IOCP | 900 | 1000 | 1100 | mA | CE = Low, R(ILIM) = 24.9kΩ, 3 V ≤ VIN < VOVP, Vhys(OVP) | 3 |
| Adjustable current limit factor | K(ILIM) | 25 | A·kΩ | 3 | |||
| Blanking time, input overcurrent | tBLANK(OCP) | 176 | µs | 3 | |||
| Recovery time from input overcurrent | tREC(OCP) | 64 | ms | 3 | |||
| Battery overvoltage protection threshold | BVOVP | 4.3 | 4.35 | 4.4 | V | CE = Low, VIN > 4.4V | 3 |
| Hysteresis on BVOVP | Vhys(Bovp) | 200 | 275 | 320 | mV | CE = Low, VIN > 4.4V | 3 |
| Input bias current on VBAT pin | I(VBAT) | 10 | nA | V(VBAT) = 4.4V, TJ = 25°C | 3 | ||
| Deglitch time, battery overvoltage | tDGL(Bovp) | 176 | µs | CE = Low, VIN > 4.4V. V(VBAT) rising from 4.1V to 4.4V to FAULT going low | 3 | ||
| Thermal shutdown temperature | TJ(OFF) | 140 | 150 | °C | 3 | ||
| Thermal shutdown hysteresis | TJ(OFF-HYS) | 20 | °C | 3 | |||
| Low-level input voltage CE | VIL | 0 | 0.4 | V | 3 | ||
| High-level input voltage CE | VIH | 1.4 | V | 3 | |||
| Low-level input current CE | IIL | 1 | µA | V(/CE) = 0V | 3 | ||
| High-level input current CE | IIH | 15 | µA | V(/CE) = 1.8V | 4 | ||
| FAULT output low voltage | VOL | 0.2 | V | ISINK = 5mA | 4 | ||
| Leakage current, FAULT pin HI-Z | Ilkg | 10 | µA | V(/FAULT) = 5V | 4 |
CAD (KiCad official)
- Symbol:
BQ24313DSGR - Footprint:
Package_SON:WSON-8-1EP_2x2mm_P0.5mm_EP0.9x1.6mm - 3D model: WSON-8-EP(2x2) (KiCad packages3D, STEP)
- 3D model files:
bq24313dsgr-etched.step/bq24313dsgr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bq24313dsgr.step/bq24313dsgr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (24 pp, sha256
a4ecae64eb31413a, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).