component
BQ24312DSGR
Public Made by Adomby adom
Texas Instruments Battery Management ICs, WSON-8-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBQ24312DSGR
Texas Instruments · Battery Management ICs · WSON-8-EP(2x2)
BQ24312DSGR from Texas Instruments, in a WSON-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IN | power_in | Input power connection to the external DC supply, which requires at least a 1 µF ceramic capacitor to VSS; the absolute maximum input voltage is 30 V with respect to VSS. |
| 2 | VSS | power_in | Ground terminal that must be held at ground at all times, with the exposed thermal pad connected to the same potential. |
| 3 | NC | unconnected | Contains internal test circuits; no external connection should be made to this pin for normal operation. |
| 4 | FAULT | output | Active-low open-drain status output that goes low on input overvoltage, input overcurrent, battery overvoltage, or thermal shutdown, with a maximum sink current of 15 mA. |
| 5 | CE | input | Active-low chip enable input that is internally pulled down; when driven high the input FET is turned off. |
| 6 | VBAT | power_in | Battery voltage sense input, connected to the pack positive terminal through a resistor, with an absolute maximum rating of 7 V with respect to VSS. |
| 7 | ILIM | bidirectional | Input overcurrent threshold programming pin, where a resistor from ILIM to VSS sets the threshold with RILIM between 15 kΩ and 90 kΩ. |
| 8 | OUT | power_out | Output terminal to the charging system, which requires at least a 1 µF ceramic capacitor to VSS, with an absolute maximum output current of 2 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-8-EP(2x2) |
| Category | Power Supply Chip |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage, IN pin (with respect to VSS) | VI | -0.3 | 30 | V | With respect to VSS | 4 | |
| Input voltage, OUT pin (with respect to VSS) | VI | -0.3 | 12 | V | With respect to VSS | 4 | |
| Input voltage, ILIM, FAULT, CE, VBAT pins (with respect to VSS) | VI | -0.3 | 7 | V | With respect to VSS | 4 | |
| Input current, IN pin | II | -1.8 | 2 | A | Negative current specified for max 50 hours at TJ = 175°C | 4 | |
| Output current, OUT pin | IO | 2 | A | 4 | |||
| Output sink current, FAULT pin | 15 | mA | 4 | ||||
| Junction temperature | TJ | -40 | 150 | °C | 4 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| Input voltage range | VIN | 3 | 30 | V | 4 | ||
| Input current, IN pin | IIN | 1.5 | A | 4 | |||
| Output current, OUT pin | IOUT | 1.5 | A | 4 | |||
| OCP programming resistor | RILIM | 15 | 90 | kΩ | 4 | ||
| Junction temperature | TJ | -40 | 125 | °C | 4 | ||
| Undervoltage lock-out threshold, input power detected (VIN increasing) | 2.6 | 2.7 | 2.8 | V | CE = Low, VIN increasing from 0 V to 3 V | 5 | |
| Hysteresis on UVLO | Vhys(UVLO) | 200 | 260 | 300 | mV | CE = Low, VIN decreasing from 3 V to 0 V | 5 |
| Operating current | IDD | 400 | 600 | μA | CE = Low, No load on OUT pin, VIN = 5 V, RILIM = 24.9 kΩ | 5 | |
| Standby current | ISTDBY | 65 | 95 | μA | CE = High, VIN = 5 V | 5 | |
| Drop-out voltage IN to OUT | VDO | 170 | 280 | mV | CE = Low, VIN = 5 V, IOUT = 1 A | 5 | |
| Input overvoltage protection threshold | VOVP | 5.71 | 5.85 | 6 | V | CE = Low, VIN increasing from 5 V to 7.5 V | 5 |
| Hysteresis on OVP | Vhys(OVP) | 20 | 60 | 110 | mV | CE = Low, VIN decreasing from 7.5 V to 5 V | 5 |
| Input overcurrent protection threshold range | 300 | 1500 | mA | 5 | |||
| Input overcurrent protection threshold | IOCP | 900 | 1000 | 1100 | mA | CE = Low, RILIM = 24.9 kΩ, 3 V ≤ VIN < VOVP, Vhys(OVP) | 5 |
| Thermal shutdown temperature | TJ(OFF) | 140 | 150 | °C | 5 | ||
| Battery overvoltage protection threshold | BVOVP | 4.3 | 4.35 | 4.4 | V | CE = Low, VIN > 4.4 V | 5 |
| Hysteresis on BVOVP | Vhys(Bovp) | 200 | 275 | 320 | mV | CE = Low, VIN > 4.4 V | 5 |
| Low-level input voltage, CE | VIL | 0 | 0.4 | V | 5 | ||
| High-level input voltage, CE | VIH | 1.4 | V | 5 | |||
| Low-level input current, CE | IIL | 1 | μA | VCE = 0 V | 5 | ||
| High-level input current, CE | IIH | 15 | μA | VCE = 1.8 V | 5 | ||
| Output low voltage, FAULT | VOL | 0.2 | V | ISINK = 5 mA | 5 | ||
| Leakage current, FAULT pin HI-Z | IHI-Z | 10 | μA | VFAULT = 5 V | 5 | ||
| Deglitch time, input power detected status | TDGL(PGOOD) | 8 | ms | CE = Low. Time measured from VIN 0 V → 5 V 1 μs rise-time, to output turning ON | 5 | ||
| Blanking time on OVP | tBLANK(OVP) | 64 | μs | CE = Low, Time measured from VIN 5 V → 7.5 V, 1 μs fall-time to output turning OFF | 5 | ||
| Recovery time from input overvoltage condition | tON(OVP) | 8 | ms | CE = Low, Time measured from VIN 7.5 V → 5 V, 1 μs fall-time | 5 | ||
| Programmable current limit factor | KILIM | 25 | AkΩ | 5 | |||
| Blanking time, input overcurrent detected | tBLANK(OCP) | 176 | μs | 5 | |||
| Recovery time from input overcurrent condition | tREC(OCP) | 64 | ms | 5 | |||
| Input bias current on VBAT pin | IVBAT | 10 | nA | VBAT = 4.4 V, TJ = 25°C | 5 | ||
| Deglitch time, battery overvoltage detected | TDGL(Bovp) | 176 | μs | CE = Low, VIN > 4.4 V. Time measured from VVBAT rising from 4.1 V to 4.4 V to FAULT going low. | 5 | ||
| Thermal shutdown hysteresis | TJ(OFF-HYS) | 20 | °C | 5 | |||
| Junction-to-ambient thermal resistance | RθJA | 64 | °C/W | 4 | |||
| Junction-to-case (top) thermal resistance | RθJC(top) | 84.1 | °C/W | 4 | |||
| Junction-to-board thermal resistance | RθJB | 33.9 | °C/W | 4 | |||
| Junction-to-top characterization parameter | ψJT | 1.9 | °C/W | 4 | |||
| Junction-to-board characterization parameter | ψJB | 34.3 | °C/W | 4 | |||
| Junction-to-case (bottom) thermal resistance | RθJC(bot) | 5.6 | °C/W | 4 |
CAD (KiCad official)
- Symbol:
BQ24312DSGR - Footprint:
Package_SON:WSON-8-1EP_2x2mm_P0.5mm_EP0.9x1.6mm - 3D model: WSON-8-EP(2x2) (KiCad packages3D, STEP)
- 3D model files:
bq24312dsgr-etched.step/bq24312dsgr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bq24312dsgr.step/bq24312dsgr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (27 pp, sha256
be491c008aaca8c3, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).