component
BQ24308DSGR
Public Made by Adomby adom
Texas Instruments Battery Management ICs, WSON-8-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BQ24308DSGR
Texas Instruments · Battery Management ICs · WSON-8-EP(2x2)
BQ24308DSGR from Texas Instruments, in a WSON-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IN | power_in | Input power, connect to external DC supply with an external 0.1μF (minimum) ceramic capacitor to VSS; absolute maximum 30 V and recommended operating range 3.3 V to 26 V. |
| 2 | VSS | power_in | Ground terminal, which must be connected to ground at all times. |
| 3 | PGATE | output | Gate drive for optional external P-FET for input reverse-polarity protection. |
| 4 | NC | unconnected | Do not connect to any external circuit; this pin may have internal connections used for test purposes. |
| 5 | CE | input | Chip enable input, active low, internally pulled down; when CE is high the input FET is off. |
| 6 | VBAT | power_in | Battery voltage sense input, connect to the pack positive terminal through a resistor. |
| 7 | ILIM | input | Input overcurrent threshold programming; an optional resistor to VSS increases the OCP threshold (RILIM max 31 kΩ). |
| 8 | OUT | power_out | Output terminal to the charging system, with an external 1μF (minimum) ceramic capacitor to VSS. |
| 9 | Thermal Pad | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-8-EP(2x2) |
| Category | Power Supply Chip |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Undervoltage lock-out threshold | VUVLO | 2.5 | 2.7 | 2.8 | V | CE= Low, VIN: 0 V → 3 V | 5 |
| Hysteresis on UVLO | VHYS-UVLO | 200 | 260 | 300 | mV | CE= Low, VIN: 3 V → 0 V | 5 |
| Operating current | IDD | 410 | 500 | μA | CE= Low, VIN = 5 V, no load on OUT pin | 5 | |
| Standby current | ISTDBY | 65 | 95 | μA | CE= High, VIN = 5 V | 5 | |
| Drop-out voltage IN to OUT | VDO | 45 | 75 | mV | CE = Low, VIN = 4 V, IOUT = 250 mA | 5 | |
| Input overvoltage protection threshold | VOVP | 6.1 | 6.3 | 6.5 | V | CE= Low, VIN: 4 V to 10 V | 5 |
| Hysteresis on OVP | VHYS-OVP | 20 | 60 | 110 | mV | CE= Low, VIN: 10 V to 4 V | 5 |
| Output voltage | VO(REG) | 4.85 | 5 | 5.15 | V | CE = Low, VIN= 6 V, IOUT = 250 mA | 5 |
| Internal input overcurrent protection threshold | IOCP | 630 | 700 | 770 | mA | CE= Low, VIN = 5V, ILIM floating; TJ = 0°C to 125°C | 5 |
| Input overcurrent protection range | IOCP | 630 | 1500 | mA | CE = Low, VIN = 5V; TJ = 0°C to 125°C | 5 | |
| OCP threshold accuracy | ΔIOCP | -10 | 10 | % | TJ = 0°C to 125°C | 5 | |
| OCP threshold accuracy | ΔIOCP | -13 | 13 | % | TJ = -40°C to 125°C | 5 | |
| Battery overvoltage protection threshold | BVOVP | 4.3 | 4.35 | 4.4 | V | CE = Low, VIN > 4.4 V, VVBAT: 4.2 V → 4.5 V | 5 |
| Hysteresis on BVOVP | VHYS-BOVP | 200 | 275 | 320 | mV | CE= Low, VIN > 4.4 V, VVBAT: 4.5 V → 3.9 V | 5 |
| Thermal shutdown temperature | TJ(OFF) | 140 | 150 | °C | 5 | ||
| Gate driver clamp voltage | VGCLMP | 13 | 15 | 17 | V | VIN > 17 V | 5 |
| Low-level input voltage | VIL | 0 | 0.4 | V | 6 | ||
| High-level input voltage | VIH | 1.4 | V | 6 | |||
| Low-level input current | IIL | 1 | μA | 6 | |||
| High-level input current | IIH | 15 | μA | VCE = 1.8 V | 6 | ||
| Deglitch time, input power detected | tDGL(PGOOD) | 8 | ms | CE = Low, VIN 0 V → 4 V, 1 µs rise-time, to output turning ON | 5 | ||
| Input OVP propagation delay | tPD(OVP) | 0.2 | 1 | μs | CE= Low, VIN 4 V → 10 V, 1µs rising time, to output turning OFF | 5 | |
| Recovery time from input overvoltage | tON(OVP) | 8 | ms | CE = Low, VIN 10 V → 4V, 1 µs fall-time, to output turning ON | 5 | ||
| Blanking time, input overcurrent detected | tBLANK(OCP) | 5 | ms | CE= Low | 5 | ||
| Recovery time from input overcurrent | tREC(OCP) | 64 | ms | CE = Low | 5 | ||
| Input bias current on VBAT pin | IVBAT | 10 | nA | VVBAT = 4.4 V, TJ = 25°C | 5 | ||
| Deglitch time, battery overvoltage detected | tDGL(BOVP) | 176 | μs | CE= Low, VIN > 4.4 V, VVBAT 4.2 V → 4.5 V, 1 µs rising time, to output turning OFF | 5 | ||
| Thermal shutdown hysteresis | TJ(OFF-HYS) | 20 | °C | 5 | |||
| Input voltage IN, PGATE | -0.3 | 30 | V | with respect to VSS | 4 | ||
| Input voltage OUT | -0.3 | 12 | V | with respect to VSS | 4 | ||
| Input voltage ILIM, CE, VBAT | -0.3 | 7 | V | with respect to VSS | 4 | ||
| Input current IN | 2 | A | 4 | ||||
| Output current OUT | 2 | A | 4 | ||||
| Output current PGATE | 5 | mA | 4 | ||||
| Junction temperature | TJ | -40 | 150 | °C | 4 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| Input voltage range | VIN | 3.3 | 26 | V | 4 | ||
| Input current, IN pin | IIN | 1.5 | A | 4 | |||
| Output current, OUT pin | IOUT | 1.5 | A | 4 | |||
| OCP programming resistor | RILIM | 31 | kΩ | 4 | |||
| Junction temperature | TJ | -40 | 125 | °C | 4 | ||
| Junction-to-ambient thermal resistance | RθJA | 58.6 | °C/W | DSG (WSON) 8 pins | 4 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 67.9 | °C/W | DSG (WSON) 8 pins | 4 | ||
| Junction-to-board thermal resistance | RθJB | 29.7 | °C/W | DSG (WSON) 8 pins | 4 | ||
| Junction-to-case (bottom) thermal resistance | RθJC(bot) | 7.6 | °C/W | DSG (WSON) 8 pins | 4 |
CAD (KiCad official)
- Symbol:
BQ24308DSGR - Footprint:
Package_SON:WSON-8-1EP_2x2mm_P0.5mm_EP0.9x1.6mm - 3D model: WSON-8-EP(2x2) (KiCad packages3D, STEP)
- 3D model files:
bq24308dsgr-etched.step/bq24308dsgr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bq24308dsgr.step/bq24308dsgr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (27 pp, sha256
c58cf49318e7c538, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BQ24308DSGR
**Texas Instruments** · Battery Management ICs · WSON-8-EP(2x2)
BQ24308DSGR from Texas Instruments, in a WSON-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IN | power_in | Input power, connect to external DC supply with an external 0.1μF (minimum) ceramic capacitor to VSS; absolute maximum 30 V and recommended operating range 3.3 V to 26 V. |
| 2 | VSS | power_in | Ground terminal, which must be connected to ground at all times. |
| 3 | PGATE | output | Gate drive for optional external P-FET for input reverse-polarity protection. |
| 4 | NC | unconnected | Do not connect to any external circuit; this pin may have internal connections used for test purposes. |
| 5 | CE | input | Chip enable input, active low, internally pulled down; when CE is high the input FET is off. |
| 6 | VBAT | power_in | Battery voltage sense input, connect to the pack positive terminal through a resistor. |
| 7 | ILIM | input | Input overcurrent threshold programming; an optional resistor to VSS increases the OCP threshold (RILIM max 31 kΩ). |
| 8 | OUT | power_out | Output terminal to the charging system, with an external 1μF (minimum) ceramic capacitor to VSS. |
| 9 | Thermal Pad | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-8-EP(2x2) |
| Category | Power Supply Chip |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Undervoltage lock-out threshold | VUVLO | 2.5 | 2.7 | 2.8 | V | CE= Low, VIN: 0 V → 3 V | 5 |
| Hysteresis on UVLO | VHYS-UVLO | 200 | 260 | 300 | mV | CE= Low, VIN: 3 V → 0 V | 5 |
| Operating current | IDD | | 410 | 500 | μA | CE= Low, VIN = 5 V, no load on OUT pin | 5 |
| Standby current | ISTDBY | | 65 | 95 | μA | CE= High, VIN = 5 V | 5 |
| Drop-out voltage IN to OUT | VDO | | 45 | 75 | mV | CE = Low, VIN = 4 V, IOUT = 250 mA | 5 |
| Input overvoltage protection threshold | VOVP | 6.1 | 6.3 | 6.5 | V | CE= Low, VIN: 4 V to 10 V | 5 |
| Hysteresis on OVP | VHYS-OVP | 20 | 60 | 110 | mV | CE= Low, VIN: 10 V to 4 V | 5 |
| Output voltage | VO(REG) | 4.85 | 5 | 5.15 | V | CE = Low, VIN= 6 V, IOUT = 250 mA | 5 |
| Internal input overcurrent protection threshold | IOCP | 630 | 700 | 770 | mA | CE= Low, VIN = 5V, ILIM floating; TJ = 0°C to 125°C | 5 |
| Input overcurrent protection range | IOCP | 630 | | 1500 | mA | CE = Low, VIN = 5V; TJ = 0°C to 125°C | 5 |
| OCP threshold accuracy | ΔIOCP | -10 | | 10 | % | TJ = 0°C to 125°C | 5 |
| OCP threshold accuracy | ΔIOCP | -13 | | 13 | % | TJ = -40°C to 125°C | 5 |
| Battery overvoltage protection threshold | BVOVP | 4.3 | 4.35 | 4.4 | V | CE = Low, VIN > 4.4 V, VVBAT: 4.2 V → 4.5 V | 5 |
| Hysteresis on BVOVP | VHYS-BOVP | 200 | 275 | 320 | mV | CE= Low, VIN > 4.4 V, VVBAT: 4.5 V → 3.9 V | 5 |
| Thermal shutdown temperature | TJ(OFF) | 140 | 150 | | °C | | 5 |
| Gate driver clamp voltage | VGCLMP | 13 | 15 | 17 | V | VIN > 17 V | 5 |
| Low-level input voltage | VIL | 0 | | 0.4 | V | | 6 |
| High-level input voltage | VIH | 1.4 | | | V | | 6 |
| Low-level input current | IIL | | | 1 | μA | | 6 |
| High-level input current | IIH | | | 15 | μA | VCE = 1.8 V | 6 |
| Deglitch time, input power detected | tDGL(PGOOD) | | 8 | | ms | CE = Low, VIN 0 V → 4 V, 1 µs rise-time, to output turning ON | 5 |
| Input OVP propagation delay | tPD(OVP) | | 0.2 | 1 | μs | CE= Low, VIN 4 V → 10 V, 1µs rising time, to output turning OFF | 5 |
| Recovery time from input overvoltage | tON(OVP) | | 8 | | ms | CE = Low, VIN 10 V → 4V, 1 µs fall-time, to output turning ON | 5 |
| Blanking time, input overcurrent detected | tBLANK(OCP) | | 5 | | ms | CE= Low | 5 |
| Recovery time from input overcurrent | tREC(OCP) | | 64 | | ms | CE = Low | 5 |
| Input bias current on VBAT pin | IVBAT | | | 10 | nA | VVBAT = 4.4 V, TJ = 25°C | 5 |
| Deglitch time, battery overvoltage detected | tDGL(BOVP) | | 176 | | μs | CE= Low, VIN > 4.4 V, VVBAT 4.2 V → 4.5 V, 1 µs rising time, to output turning OFF | 5 |
| Thermal shutdown hysteresis | TJ(OFF-HYS) | | 20 | | °C | | 5 |
| Input voltage IN, PGATE | | -0.3 | | 30 | V | with respect to VSS | 4 |
| Input voltage OUT | | -0.3 | | 12 | V | with respect to VSS | 4 |
| Input voltage ILIM, CE, VBAT | | -0.3 | | 7 | V | with respect to VSS | 4 |
| Input current IN | | | | 2 | A | | 4 |
| Output current OUT | | | | 2 | A | | 4 |
| Output current PGATE | | | | 5 | mA | | 4 |
| Junction temperature | TJ | -40 | | 150 | °C | | 4 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 4 |
| Input voltage range | VIN | 3.3 | | 26 | V | | 4 |
| Input current, IN pin | IIN | | | 1.5 | A | | 4 |
| Output current, OUT pin | IOUT | | | 1.5 | A | | 4 |
| OCP programming resistor | RILIM | | | 31 | kΩ | | 4 |
| Junction temperature | TJ | -40 | | 125 | °C | | 4 |
| Junction-to-ambient thermal resistance | RθJA | | 58.6 | | °C/W | DSG (WSON) 8 pins | 4 |
| Junction-to-case (top) thermal resistance | RθJC(top) | | 67.9 | | °C/W | DSG (WSON) 8 pins | 4 |
| Junction-to-board thermal resistance | RθJB | | 29.7 | | °C/W | DSG (WSON) 8 pins | 4 |
| Junction-to-case (bottom) thermal resistance | RθJC(bot) | | 7.6 | | °C/W | DSG (WSON) 8 pins | 4 |
## CAD (KiCad official)
- Symbol: `BQ24308DSGR`
- Footprint: `Package_SON:WSON-8-1EP_2x2mm_P0.5mm_EP0.9x1.6mm`
- 3D model: WSON-8-EP(2x2) (KiCad packages3D, STEP)
- 3D model files: `bq24308dsgr-etched.step` / `bq24308dsgr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bq24308dsgr.step` / `bq24308dsgr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/bq24308dsgr.pdf) (27 pp, sha256 `c58cf49318e7c538`, retrieved 2026-10-31, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bq24308dsgr-datasheet.pdf)