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BQ24295RGER

Texas Instruments · Battery Management · VQFN-24-EP(4x4)

BQ24295RGER from Texas Instruments, in a VQFN-24-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VBUS power_in Charger input voltage; the internal n-channel reverse block MOSFET (RBFET) connects VBUS to PMID with VBUS on source, and a 1-µF ceramic capacitor should be placed from VBUS to PGND as close as possible to the IC.
2 D+ input Positive line of the USB data pair used for D+/D- based host/charging port detection, including data contact detection (DCD) and BC1.2 primary detection.
3 D- input Negative line of the USB data pair used for D+/D- based host/charging port detection, including data contact detection (DCD) and BC1.2 primary detection.
4 STAT output Open-drain charge status output: LOW indicates charge in progress, HIGH indicates charge complete or charge disabled, and a fault blinks STAT at 1 Hz; connect to the pull-up rail through 10 kΩ.
5 SCL input I2C interface clock; connect SCL to the logic rail through a 10-kΩ resistor.
6 SDA bidirectional I2C interface data; connect SDA to the logic rail through a 10-kΩ resistor.
7 INT output Open-drain interrupt output that sends an active-low 256-µs pulse to the host to report charger status and faults; connect to a logic rail through 10 kΩ.
8 OTG input OTG enable pin: boost mode is activated when OTG is high, REG01[5] = 1, and no input source is detected at VBUS.
9 CE input Active-low charge enable: battery charging is enabled when REG01[5:4] = 01 and CE is low, and CE must be pulled high or low.
10 ILIM input Sets the maximum input current by regulating the ILIM voltage at 1 V through a resistor to ground, with IINMAX = (1 V/RILIM) × KILIM; the minimum current programmed on ILIM is 500 mA.
11 TS input Temperature qualification voltage input for a negative temperature coefficient thermistor, biased by a resistor divider from REGN to TS to GND; charge suspends or boost disables when TS is out of range, and a 103AT-2 thermistor is recommended.
12 QON input BATFET enable control in shipping mode: a logic low-to-high transition with at least 2 ms high level turns on the BATFET to exit shipping mode, and the pin has an internal 1-MΩ (typ) pull-down.
13 BAT power_in Battery connection to the positive terminal of the battery pack; the internal BATFET connects BAT to SYS, and a 10-µF capacitor should be placed close to the BAT pin.
14 BAT power_in Battery connection to the positive terminal of the battery pack; the internal BATFET connects BAT to SYS, and a 10-µF capacitor should be placed close to the BAT pin.
15 SYS power_out System connection point connected to BAT through the internal BATFET; when the battery falls below the minimum system voltage, the switch-mode converter keeps SYS above the minimum system voltage.
16 SYS power_out System connection point connected to BAT through the internal BATFET; when the battery falls below the minimum system voltage, the switch-mode converter keeps SYS above the minimum system voltage.
17 PGND power_in Power ground for the high-current converter node, connected internally to the source of the n-channel LSFET; a single-point connection between PGND and analog GND near the IC PGND pin is recommended.
18 PGND power_in Power ground for the high-current converter node, connected internally to the source of the n-channel LSFET; a single-point connection between PGND and analog GND near the IC PGND pin is recommended.
19 SW output Switching node connected to the output inductor, internally tied to the HSFET source and LSFET drain; a 0.047-µF bootstrap capacitor connects from SW to BTST.
20 SW output Switching node connected to the output inductor, internally tied to the HSFET source and LSFET drain; a 0.047-µF bootstrap capacitor connects from SW to BTST.
21 BTST power_in PWM high-side driver positive supply, internally connected to the anode of the bootstrap diode; a 0.047-µF bootstrap capacitor connects from SW to BTST.
22 REGN power_out PWM low-side driver positive supply output, internally connected to the cathode of the bootstrap diode; a 4.7-µF (10-V rating) ceramic capacitor from REGN to analog GND should be placed close to the IC, and REGN also biases the TS pin.
23 PMID power_out Battery boost mode output voltage connected to the drain of the reverse blocking MOSFET and the drain of the HSFET; a minimum of 20 µF is required from PMID to PGND.
24 VBUS power_in Charger input voltage, shared with pin 1; the internal RBFET connects VBUS to PMID with VBUS on source, and a 1-µF ceramic capacitor should be placed from VBUS to PGND as close as possible to the IC.
25 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package VQFN-24-EP(4x4)
Category Power Management (PMIC)
Pins 25

CAD (KiCad official)

  • Symbol: BQ24295RGER
  • Footprint: Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm
  • 3D model: VQFN-24-EP(4x4) (KiCad packages3D, STEP)
  • 3D model files: bq24295rger-etched.step / bq24295rger-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bq24295rger.step / bq24295rger.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (53 pp, sha256 9bff4d16438b4652, retrieved 2026-10-10, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF