component
BQ24166RGET
Public Made by Adomby adom
Texas Instruments Battery Management, VQFN-24-EP(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+62@@ -0,0 +1,62 @@+# BQ24166RGET++**Texas Instruments** · Battery Management · VQFN-24-EP(4x4)++BQ24166RGET from Texas Instruments, in a VQFN-24-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | VDPM | input | Input Voltage Dynamic Power Management programming input; connect resistor divider from IN to GND with VDPM at center tap to program VIN-DPM threshold. |+| 2 | IUSB3 | input | USB input current limit programming input for USB3.0 standard. |+| 3 | IUSB2 | input | USB input current limit programming input for USB2.0 standard. |+| 4 | IUSB1 | input | USB input current limit programming input with USB2.0 and USB3.0 current limits available per Table 1. |+| 5 | ISET | input | Charge current programming input; connect resistor from ISET to GND to program fast charge current from 550mA to 2.5A. |+| 6 | DRV | power_out | Gate drive bias supply for internal MOSFETs; bypass to PGND with 1μF ceramic capacitor; capable of supplying up to 10mA to external loads. |+| 7 | PG | tri_state | Power good open drain output pulled low when valid supply between VBAT+VSLP and VOVP is connected to USB or IN; high impedance otherwise. |+| 8 | CHG | tri_state | Charge status open drain output pulled low when charge cycle starts and remains low while charging; high impedance when charging terminates. |+| 9 | TS | input | Battery pack NTC thermistor monitor input; connect to center tap of resistor divider from DRV to GND with thermistor to GND. |+| 10 | BGATE | output | External P-channel MOSFET gate connection for discharge path; pulled low during high impedance mode and when no input connected. |+| 11 | BAT | bidirectional | Battery positive terminal connection; additionally bypass to GND with at least 1μF capacitor. |+| 12 | BAT | bidirectional | Battery positive terminal connection; additionally bypass to GND with at least 1μF capacitor. |+| 13 | SYS | input | System voltage sense and charger FET connection; connect to system output at output bulk capacitors and bypass locally with at least 10μF. |+| 14 | SYS | input | System voltage sense and charger FET connection; connect to system output at output bulk capacitors and bypass locally with at least 10μF. |+| 15 | ILIM | input | IN input current limit programming input; connect resistor from ILIM to GND to program current limit from 1A to 2.5A; no effect on USB input. |+| 16 | PGND | power_in | Power ground terminal; connect to thermal pad and ground plane of the circuit. |+| 17 | PGND | power_in | Power ground terminal; connect to thermal pad and ground plane of the circuit. |+| 18 | SW | power_out | Inductor connection; connect to the switched side of the external inductor. |+| 19 | BOOT | passive | Boot capacitor connection; connect 0.01μF ceramic capacitor with voltage rating > 10V from BOOT to SW for high side MOSFET gate drive. |+| 20 | PMIDI | power_out | Reverse blocking MOSFET and high side MOSFET connection point for high power IN input; bypass to GND with at least 4.7μF ceramic capacitor. |+| 21 | IN | power_in | Input power supply from AC adapter or alternate power source; bypass to PGND with at least 1μF ceramic capacitor; 10.5V OVP rated. |+| 22 | USB | power_in | USB input power supply from port or AC adapter; bypass to PGND with at least 1μF ceramic capacitor; 6.5V OVP rated. |+| 23 | PMIDU | power_out | Reverse blocking MOSFET and high side MOSFET connection point for USB input; bypass to GND with at least 4.7μF ceramic capacitor. |+| 24 | CE | input | Charge enable input; low logic level enables charging and high logic level disables charging; SYS regulated but BAT disconnected when disabled. |+| 25 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | Texas Instruments |+| Package | VQFN-24-EP(4x4) |+| Category | Power Management (PMIC) |+| Pins | 25 |++## CAD (KiCad official)++- Symbol: `BQ24166RGET`+- Footprint: `Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm`+- 3D model: VQFN-24-EP(4x4) (KiCad packages3D, STEP)+- 3D model files: `bq24166rget-etched.step` / `bq24166rget-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bq24166rget.step` / `bq24166rget.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/bq24167) (39 pp, sha256 `4dfca4e8d4de97f8`, retrieved 2026-10-07, tier: lcsc)+- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/bq24166rget-datasheet.pdf)
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Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "tags": [+ "component",+ "power management (pmic)",+ "bq24166rget",+ "factory-2.0.0",+ "extractor-text"+ ],+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "bq24166rget.kicad_sym",+ "bq24166rget.kicad_mod",+ "bq24166rget.glb",+ "bq24166rget.step",+ "bq24166rget.lbr",+ "docs/hero.png",+ "docs/bq24166rget-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html",+ "bq24166rget-hero.glb",+ "bq24166rget-hero.overlay.json"+ ],+ "component": {+ "mpn": "BQ24166RGET",+ "manufacturer": "Texas Instruments",+ "package": "VQFN-24-EP(4x4)",+ "pin_count": 25,+ "category": "Power Management (PMIC)",+ "subcategory": "Battery Management",+ "datasheet": "https://www.ti.com/cn/lit/gpn/bq24167",+ "parts": {+ "symbol": "bq24166rget.kicad_sym",+ "footprint": "bq24166rget.kicad_mod",+ "model_3d": "bq24166rget-hero.glb",+ "model_3d_plain": "bq24166rget.glb",+ "model_3d_step": "bq24166rget-etched.step",+ "model_3d_step_plain": "bq24166rget.step",+ "lbr": "bq24166rget.lbr"+ },+ "distributor_links": {+ "lcsc": "C2866513",+ "digikey": "296-36560-2-ND",+ "mouser": "595-BQ24166RGET"+ },+ "distributor_check": {+ "checked_at": "2026-10-07T02:20:56Z",+ "source": "Component Ocean /api/assign-pns",+ "digikey": {+ "pn": "296-36560-2-ND",+ "status": "found",+ "lifecycle": "Active"+ },+ "mouser": {+ "pn": "595-BQ24166RGET",+ "status": "found"+ }+ },+ "pins": [+ {+ "number": "1",+ "name": "VDPM",+ "type": "input",+ "description": "Input Voltage Dynamic Power Management programming input; connect resistor divider from IN to GND with VDPM at center tap to program VIN-DPM threshold."+ },+ {+ "number": "2",+ "name": "IUSB3",+ "type": "input",+ "description": "USB input current limit programming input for USB3.0 standard."+ },+ {+ "number": "3",+ "name": "IUSB2",+ "type": "input",+ "description": "USB input current limit programming input for USB2.0 standard."+ },+ {+ "number": "4",+ "name": "IUSB1",+ "type": "input",+ "description": "USB input current limit programming input with USB2.0 and USB3.0 current limits available per Table 1."+ },+ {+ "number": "5",+ "name": "ISET",+ "type": "input",+ "description": "Charge current programming input; connect resistor from ISET to GND to program fast charge current from 550mA to 2.5A."+ },+ {+ "number": "6",+ "name": "DRV",+ "type": "power_out",+ "description": "Gate drive bias supply for internal MOSFETs; bypass to PGND with 1μF ceramic capacitor; capable of supplying up to 10mA to external loads."+ },+ {+ "number": "7",+ "name": "PG",+ "type": "tri_state",+ "description": "Power good open drain output pulled low when valid supply between VBAT+VSLP and VOVP is connected to USB or IN; high impedance otherwise."+ },+ {+ "number": "8",+ "name": "CHG",+ "type": "tri_state",+ "description": "Charge status open drain output pulled low when charge cycle starts and remains low while charging; high impedance when charging terminates."+ },+ {+ "number": "9",+ "name": "TS",+ "type": "input",+ "description": "Battery pack NTC thermistor monitor input; connect to center tap of resistor divider from DRV to GND with thermistor to GND."+ },+ {+ "number": "10",+ "name": "BGATE",+ "type": "output",+ "description": "External P-channel MOSFET gate connection for discharge path; pulled low during high impedance mode and when no input connected."+ },+ {+ "number": "11",+ "name": "BAT",+ "type": "bidirectional",+ "description": "Battery positive terminal connection; additionally bypass to GND with at least 1μF capacitor."+ },+ {+ "number": "12",+ "name": "BAT",+ "type": "bidirectional",+ "description": "Battery positive terminal connection; additionally bypass to GND with at least 1μF capacitor."+ },+ {+ "number": "13",+ "name": "SYS",+ "type": "input",+ "description": "System voltage sense and charger FET connection; connect to system output at output bulk capacitors and bypass locally with at least 10μF."+ },+ {+ "number": "14",+ "name": "SYS",+ "type": "input",+ "description": "System voltage sense and charger FET connection; connect to system output at output bulk capacitors and bypass locally with at least 10μF."+ },+ {+ "number": "15",+ "name": "ILIM",+ "type": "input",+ "description": "IN input current limit programming input; connect resistor from ILIM to GND to program current limit from 1A to 2.5A; no effect on USB input."+ },+ {+ "number": "16",+ "name": "PGND",+ "type": "power_in",+ "description": "Power ground terminal; connect to thermal pad and ground plane of the circuit."+ },+ {+ "number": "17",+ "name": "PGND",+ "type": "power_in",+ "description": "Power ground terminal; connect to thermal pad and ground plane of the circuit."+ },+ {+ "number": "18",+ "name": "SW",+ "type": "power_out",+ "description": "Inductor connection; connect to the switched side of the external inductor."+ },+ {+ "number": "19",+ "name": "BOOT",+ "type": "passive",+ "description": "Boot capacitor connection; connect 0.01μF ceramic capacitor with voltage rating > 10V from BOOT to SW for high side MOSFET gate drive."+ },+ {+ "number": "20",+ "name": "PMIDI",+ "type": "power_out",+ "description": "Reverse blocking MOSFET and high side MOSFET connection point for high power IN input; bypass to GND with at least 4.7μF ceramic capacitor."+ },+ {+ "number": "21",+ "name": "IN",+ "type": "power_in",+ "description": "Input power supply from AC adapter or alternate power source; bypass to PGND with at least 1μF ceramic capacitor; 10.5V OVP rated."+ },+ {+ "number": "22",+ "name": "USB",+ "type": "power_in",+ "description": "USB input power supply from port or AC adapter; bypass to PGND with at least 1μF ceramic capacitor; 6.5V OVP rated."+ },+ {+ "number": "23",+ "name": "PMIDU",+ "type": "power_out",+ "description": "Reverse blocking MOSFET and high side MOSFET connection point for USB input; bypass to GND with at least 4.7μF ceramic capacitor."+ },+ {+ "number": "24",+ "name": "CE",+ "type": "input",+ "description": "Charge enable input; low logic level enables charging and high logic level disables charging; SYS regulated but BAT disconnected when disabled."+ },+ {+ "number": "25",+ "name": "EP",+ "type": "passive",+ "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.3",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.3",+ "primary_model": "claude-haiku-4-5-20251001",+ "primary_mode": "text",+ "consensus_model": "claude-sonnet-5-5",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [+ "extractor flagged: Exposed thermal pad referenced in datasheet has internal electrical connection to PGND but is not as",+ "exposed pad 25 added from the footprint"+ ],+ "pages_sent": 14,+ "cost_usd": 0.2084,+ "at": "2026-10-07T02:20:42"+ },+ "datasheet": {+ "url": "https://www.ti.com/cn/lit/gpn/bq24167",+ "pages": 39,+ "sha256": "4dfca4e8d4de97f8",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 25,+ "described": 25,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ },+ "models_3d": [+ {+ "file": "bq24166rget.step",+ "role": "plain",+ "up": "Z",+ "units": "mm",+ "origin": "footprint origin = pad-pattern centre",+ "seat": "z = 0",+ "extents_mm": [+ 4,+ 4,+ 0.77+ ],+ "zmin_mm": 0,+ "centre_offset_mm": 0,+ "footprint_binding": "identity",+ "sha256": "096fc110543e6d324c5120c2d38e3dca87a389da9b6fac234f1fe40856295ef4",+ "checked": "2026-10-07",+ "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"+ },+ {+ "file": "bq24166rget-etched.step",+ "role": "eda",+ "up": "Z",+ "units": "mm",+ "origin": "footprint origin = pad-pattern centre",+ "seat": "z = 0",+ "extents_mm": [+ 4,+ 4,+ 0.77+ ],+ "zmin_mm": 0,+ "centre_offset_mm": 0,+ "footprint_binding": "identity",+ "sha256": "fa598302d59520489015205ab41abfdb54300df9b80df9e6e86ad6345adef2ae",+ "checked": "2026-10-07",+ "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"+ }+ ]+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}