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Contents

README

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BQ24166RGER

Texas Instruments · Battery Management · VQFN-24(4x4)

BQ24166RGER from Texas Instruments, in a VQFN-24(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDPM input Input Voltage DPM programming input; connect resistor divider from IN to GND with VDPM at center tap to set VIN-DPM threshold for dynamic power management.
2 IUSB3 input USB Input Current Limit programming input pin 3; IUSB1/2/3 collectively program USB input current limit for USB2.0/3.0 standards with no effect on IN input.
3 IUSB2 input USB Input Current Limit programming input pin 2; IUSB1/2/3 collectively program USB input current limit for USB2.0/3.0 standards with no effect on IN input.
4 IUSB1 input USB Input Current Limit programming input pin 1; IUSB1/2/3 collectively program USB input current limit for USB2.0/3.0 standards with no effect on IN input.
5 ISET input Charge current programming input; connect resistor from ISET to GND to program fast charge current from 550mA to 2.5A.
6 DRV output Gate drive supply output providing bias for internal MOSFET gate drivers; bypass to PGND with 1μF ceramic capacitor, may drive external loads up to 10mA when supply sufficient.
7 PG tri_state Power Good open-drain output; pulled low when valid supply (between VBAT+VSLP and VOVP) connected to USB or IN, high-impedance otherwise.
8 CHG tri_state Charge Status open-drain output; pulled low at charge cycle start and remains low while charging, high-impedance when charging terminates or no supply connected.
9 TS input Battery NTC thermistor monitor input; connect to center tap of resistor divider from DRV to GND with thermistor to GND providing Hot/Cold temperature shutdown thresholds.
10 BGATE output External P-Channel MOSFET gate driver output connected to external FET gate for low-resistance battery discharge path; low during high-impedance mode and when no input connected.
11 BAT bidirectional Battery positive terminal connection; bypass to GND with minimum 1μF capacitor to support high current transients and minimize parasitic inductance.
12 BAT bidirectional Battery positive terminal connection; bypass to GND with minimum 1μF capacitor to support high current transients and minimize parasitic inductance.
13 SYS input System voltage sense connected to output bulk capacitors; bypass locally with minimum 10μF (47μF recommended for best transient response).
14 SYS input System voltage sense connected to output bulk capacitors; bypass locally with minimum 10μF (47μF recommended for best transient response).
15 ILIM input Input current limit programming input for IN; connect resistor from ILIM to GND to set current limit from 1A to 2.5A with no effect on USB input.
16 PGND power_in Ground terminal connected to thermal pad and circuit ground plane; primary return path for all IC currents.
17 PGND power_in Ground terminal connected to circuit ground plane; return path for all IC currents.
18 SW output Inductor connection output; connect to switched side of external inductor with current returning to PGND through internal low-side MOSFET.
19 BOOT output Bootstrap capacitor connection for high-side MOSFET gate drive; connect 0.01μF ceramic capacitor (>10V rating) from BOOT to SW.
20 PMIDI output High Power input path node connecting reverse blocking and high-side MOSFETs; bypass to GND with 4.7μF ceramic capacitor; not current limited so short-circuit protection required.
21 IN power_in AC Adapter or alternate power supply input rated for 20V with overvoltage protection; bypass to PGND with minimum 1μF ceramic capacitor; 0-2.5A maximum input current.
22 USB power_in USB input power supply rated for 6.5V with overvoltage protection; bypass to PGND with minimum 1μF ceramic capacitor; 0-1.5A maximum input current.
23 PMIDU output USB input path node connecting reverse blocking and high-side MOSFETs; bypass to GND with 4.7μF ceramic capacitor; not current limited so short-circuit protection required.
24 CE input Charge Enable input; logic 0 enables charging and logic 1 disables charging; when disabled SYS remains regulated but BAT disconnects from SYS.
25 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package VQFN-24(4x4)
Category Power Management (PMIC)
Pins 25

CAD (KiCad official)

  • Symbol: BQ24166RGER
  • Footprint: Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm
  • 3D model: VQFN-24(4x4) (KiCad packages3D, STEP)
  • 3D model files: bq24166rger-etched.step / bq24166rger-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bq24166rger.step / bq24166rger.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (39 pp, sha256 4dfca4e8d4de97f8, retrieved 2026-10-01, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF