component
BQ24161RGER
Public Made by Adomby adom
Texas Instruments Battery Management ICs, VQFN-24-EP(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BQ24161RGER
Texas Instruments · Battery Management ICs · VQFN-24-EP(4x4)
BQ24161RGER from Texas Instruments, in a VQFN-24-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | N.C. | unconnected | No connect on the BQ24161 (D- is only used on BQ24160/BQ24163 at this location). |
| 2 | PSEL | input | USB source detection input: high starts USB at 100 mA (BQ24161/8) or 500 mA (BQ24161B), low starts USB at 1.5 A; has no effect on IN and must not be left unconnected. |
| 3 | SCL | input | I2C interface clock; connect to the logic rail through a 10-kΩ resistor. |
| 4 | SDA | bidirectional | I2C interface data; connect to the logic rail through a 10-kΩ resistor. |
| 5 | PGND | power_in | Ground terminal; connect to the thermal pad and the ground plane of the circuit, and it must be grounded at all times. |
| 6 | DRV | power_out | Gate drive supply for the internal MOSFETs; bypass to PGND with a 1-μF ceramic capacitor, and it can drive external loads up to 10 mA. |
| 7 | INT | output | Open-drain status output that pulls low during charging and sends a 128-μs pulse on faults; connect to a logic rail through a 100-kΩ resistor. |
| 8 | STAT | output | Open-drain status output that pulls low during charging and sends a 128-μs pulse on faults; pull up through an LED or a 10-kΩ resistor. |
| 9 | TS | input | Battery pack NTC monitor input connected to the center tap of a resistor divider from DRV to GND, with 4 JEITA thresholds on BQ24161B only; connect to DRV to disable. |
| 10 | BGATE | output | Gate drive for an external P-channel discharge MOSFET; low during high impedance mode and when no input is connected. |
| 11 | BAT | bidirectional | Battery connection to the positive battery terminal; bypass to GND with at least a 1-μF capacitor. |
| 12 | BAT | bidirectional | Battery connection to the positive battery terminal; bypass to GND with at least a 1-μF capacitor. |
| 13 | SYS | power_out | System voltage sense and charger FET connection; connect at the output bulk capacitors and bypass with at least 10 μF (47 μF recommended). |
| 14 | SYS | power_out | System voltage sense and charger FET connection; connect at the output bulk capacitors and bypass with at least 10 μF (47 μF recommended). |
| 15 | PGND | power_in | Ground terminal; connect to the thermal pad and the ground plane of the circuit, and it must be grounded at all times. |
| 16 | PGND | power_in | Ground terminal; connect to the thermal pad and the ground plane of the circuit, and it must be grounded at all times. |
| 17 | PGND | power_in | Ground terminal; connect to the thermal pad and the ground plane of the circuit, and it must be grounded at all times. |
| 18 | SW | output | Inductor connection; connect to the switched side of the external inductor. |
| 19 | BOOT | input | High-side MOSFET gate driver supply; connect a 0.01-μF ceramic capacitor (rated above 10 V) from BOOT to SW. |
| 20 | PMIDI | power_out | Reverse blocking and high-side MOSFET connection point for the high-power IN input; bypass with at least 4.7 μF, and the output is not current limited. |
| 21 | IN | power_in | Input power supply from the external DC supply (rated 20 V absolute max, 4.2 V to 10 V operating for BQ24161); bypass to PGND with at least 1 μF. |
| 22 | USB | power_in | USB input power supply from an AC adapter or USB port (4.2 V to 6 V operating); bypass to PGND with at least 1 μF. |
| 23 | PMIDU | power_out | Reverse blocking and high-side MOSFET connection point for the USB input; bypass with at least 4.7 μF, and the output is not current limited. |
| 24 | CD | input | Hardware chip disable input: high places the device in high-z mode, low is normal operation; do not leave unconnected. |
| 25 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | VQFN-24-EP(4x4) |
| Category | Power Supply Chip |
| Pins | 25 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| System regulation voltage, charge enabled, VBAT < VMINSYS | VSYS(REG) | 3.6 | 3.7 | 3.82 | V | Charge Enabled, VBAT < VMINSYS, BQ24160, 1, 1B, 8 | 8 |
| System regulation voltage, battery FET off | VSYS(REG) | 1.5 | 3 | 4.17 | % above VBATREG | Battery FET turned off (Charge Disabled, TS Fault or Charging Terminated); VBATREG + x% | 8 |
| Minimum system regulation voltage | VMINSYS | 3.4 | 3.5 | 3.62 | V | Charge enabled, VBAT < VMINSYS, Input current limit or VINDPM active, BQ24160, 1, 1B, 8 | 8 |
| Battery charger MOSFET on-resistance | RON(BAT-SYS) | 50 | 70 | mΩ | Measured from BAT to SYS, VBAT = 4.2V, RGE pkg | 8 | |
| Charge voltage programmable range | VBATREG | 3.5 | 4.44 | V | Operating in voltage regulation, Programmable range | 8 | |
| Voltage regulation accuracy | VBATREG | -1 | 1 | % | Operating in voltage regulation | 8 | |
| Fast charge current range | ICHARGE | 550 | 2500 | mA | VBATSHRT ≤ VBAT < VBAT(REG) programmable range | 8 | |
| Fast charge current accuracy | ICHARGE | -10 | 10 | % | 0°C to 125°C | 8 | |
| Battery short circuit threshold | VBATSHRT | 1.9 | 2 | 2.1 | V | 100mV Hysteresis, BQ24161, 3, 8 | 8 |
| Termination charge current accuracy | ITERM | -40 | 40 | % | ITERM = 50mA | 8 | |
| Termination charge current accuracy | ITERM | -20 | 20 | % | ITERM = 100mA | 8 | |
| Termination charge current accuracy | ITERM | -15 | 15 | % | ITERM ≥ 150mA | 8 | |
| USB input current limit | IIN_USB | 90 | 95 | 100 | mA | USB charge mode, VUSB = 5V, IUSBLIM = USB100 | 9 |
| USB input current limit | IIN_USB | 450 | 475 | 500 | mA | USB charge mode, VUSB = 5V, IUSBLIM = USB500 | 9 |
| USB input current limit | IIN_USB | 1250 | 1400 | 1500 | mA | USB charge mode, VUSB = 5V, IUSBLIM = 1.5A | 9 |
| IN input current limit | IIN_IN | 1.35 | 1.5 | 1.65 | A | IN charge mode, VIN = 5V, IINLIM = 1.5A | 9 |
| IN input current limit | IIN_IN | 2.3 | 2.5 | 2.8 | A | IN charge mode, VIN = 5V, IINLIM = 2.5A | 9 |
| Input based DPM threshold range | VIN_DPM | 4.2 | 4.76 | V | Charge mode, programmable via I2C, both inputs | 9 | |
| VIN_DPM threshold accuracy | VIN_DPM | -2 | 2 | % | 9 | ||
| Internal bias regulator voltage | VDRV | 5 | 5.2 | 5.45 | V | VSUPPLY > 5.45V | 9 |
| IC active threshold voltage | VUVLO | 3.6 | 3.8 | 4 | V | VIN rising | 9 |
| Sleep-mode entry threshold | VSLP | 0 | 40 | 100 | mV | 2.0V ≤VBAT ≤VBATREG, VIN falling | 9 |
| Sleep-mode exit hysteresis | VSLP_EXIT | 40 | 100 | 175 | mV | 2.0V ≤VBAT ≤VBATREG | 9 |
| USB input supply OVP threshold | VOVP | 6.3 | 6.5 | 6.7 | V | USB, VUSB Rising | 9 |
| IN input supply OVP threshold | VOVP | 10.3 | 10.5 | 10.7 | V | IN, VIN Rising (BQ24160/1/1B/3) | 9 |
| Battery OVP threshold voltage | VBOVP | 1.025 | 1.05 | 1.075 | V | VBAT threshold over VOREG to turn off charger during charge; × VBATREG | 9 |
| Cycle-by-cycle current limit | ILIMIT | 4.1 | 4.9 | 5.6 | A | VSYS shorted | 9 |
| Safety timer accuracy | -20 | 20 | % | BQ24160/1/1B/3 Only | 10 | ||
| Reverse blocking MOSFET on-resistance (USB to PMIDU) | 95 | 175 | mΩ | IIN_LIMIT = 500mA, Measured from USB to PMIDU | 10 | ||
| Reverse blocking MOSFET on-resistance (IN to PMIDI) | 45 | 80 | mΩ | IIN_LIMIT = 500mA, Measured from IN to PMIDI | 10 | ||
| Top switching MOSFET on-resistance (PMIDU to SW) | 100 | 175 | mΩ | Measured from PMIDU to SW | 10 | ||
| Top switching MOSFET on-resistance (PMIDI to SW) | 65 | 110 | mΩ | Measured from PMIDI to SW | 10 | ||
| Bottom N-channel MOSFET on-resistance | 65 | 115 | mΩ | Measured from SW to PGND | 10 | ||
| Oscillator frequency | fOSC | 1.35 | 1.5 | 1.65 | MHz | 10 | |
| Good Battery threshold | VBATGD | 3.6 | 3.8 | 3.9 | V | 10 | |
| PSEL, CD input high logic level | VIH | 1.3 | V | 9 | |||
| PSEL, CD input low logic level | VIL | 0.4 | V | 9 | |||
| Low-level output saturation voltage (STAT, INT) | VOL | 0.4 | V | IO = 10mA, sink current | 9 | ||
| Supply current, PWM switching | ISUPPLY | 15 | mA | PWM switching | 8 | ||
| Supply current, High-Z Mode | ISUPPLY | 175 | μA | 0°C < TJ < 85°C, High-Z Mode | 8 | ||
| Pin voltage IN, USB | -2 | 20 | V | with respect to VSS | 7 | ||
| Pin voltage PMIDI, PMIDU, BOOT | -0.3 | 20 | V | with respect to VSS | 7 | ||
| Pin voltage SW | -0.7 | 12 | V | with respect to VSS | 7 | ||
| Pin voltage SDA, SCL, SYS, BAT, STAT, BGATE, DRV, TS, D+, D-, INT, PSEL, CD | -0.3 | 7 | V | with respect to VSS | 7 | ||
| BOOT to SW voltage | -0.3 | 7 | V | 7 | |||
| Junction temperature | TJ | -40 | 125 | °C | 7 | ||
| Storage temperature range | Tstg | -65 | 150 | °C | 7 | ||
| Operating free-air temperature range | -40 | 85 | °C | 7 | |||
| IN operating voltage range (BQ24160/1/3) | VIN | 4.2 | 10 | V | 7 | ||
| USB operating range | VUSB | 4.2 | 6 | V | 7 | ||
| Operating junction temperature range | TJ | 0 | 125 | °C | 7 | ||
| Junction-to-ambient thermal resistance | θJA | 32.6 | °C/W | 24 PINS (RGE) | 8 | ||
| Junction-to-case (top) thermal resistance | θJCtop | 30.5 | °C/W | 24 PINS (RGE) | 8 |
CAD (KiCad official)
- Symbol:
BQ24161RGER - Footprint:
Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm - 3D model: VQFN-24-EP(4x4) (KiCad packages3D, STEP)
- 3D model files:
bq24161rger-etched.step/bq24161rger-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bq24161rger.step/bq24161rger.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (54 pp, sha256
5c151470748871c8, retrieved 2026-11-02, tier: manufacturer) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BQ24161RGER
**Texas Instruments** · Battery Management ICs · VQFN-24-EP(4x4)
BQ24161RGER from Texas Instruments, in a VQFN-24-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | N.C. | unconnected | No connect on the BQ24161 (D- is only used on BQ24160/BQ24163 at this location). |
| 2 | PSEL | input | USB source detection input: high starts USB at 100 mA (BQ24161/8) or 500 mA (BQ24161B), low starts USB at 1.5 A; has no effect on IN and must not be left unconnected. |
| 3 | SCL | input | I2C interface clock; connect to the logic rail through a 10-kΩ resistor. |
| 4 | SDA | bidirectional | I2C interface data; connect to the logic rail through a 10-kΩ resistor. |
| 5 | PGND | power_in | Ground terminal; connect to the thermal pad and the ground plane of the circuit, and it must be grounded at all times. |
| 6 | DRV | power_out | Gate drive supply for the internal MOSFETs; bypass to PGND with a 1-μF ceramic capacitor, and it can drive external loads up to 10 mA. |
| 7 | INT | output | Open-drain status output that pulls low during charging and sends a 128-μs pulse on faults; connect to a logic rail through a 100-kΩ resistor. |
| 8 | STAT | output | Open-drain status output that pulls low during charging and sends a 128-μs pulse on faults; pull up through an LED or a 10-kΩ resistor. |
| 9 | TS | input | Battery pack NTC monitor input connected to the center tap of a resistor divider from DRV to GND, with 4 JEITA thresholds on BQ24161B only; connect to DRV to disable. |
| 10 | BGATE | output | Gate drive for an external P-channel discharge MOSFET; low during high impedance mode and when no input is connected. |
| 11 | BAT | bidirectional | Battery connection to the positive battery terminal; bypass to GND with at least a 1-μF capacitor. |
| 12 | BAT | bidirectional | Battery connection to the positive battery terminal; bypass to GND with at least a 1-μF capacitor. |
| 13 | SYS | power_out | System voltage sense and charger FET connection; connect at the output bulk capacitors and bypass with at least 10 μF (47 μF recommended). |
| 14 | SYS | power_out | System voltage sense and charger FET connection; connect at the output bulk capacitors and bypass with at least 10 μF (47 μF recommended). |
| 15 | PGND | power_in | Ground terminal; connect to the thermal pad and the ground plane of the circuit, and it must be grounded at all times. |
| 16 | PGND | power_in | Ground terminal; connect to the thermal pad and the ground plane of the circuit, and it must be grounded at all times. |
| 17 | PGND | power_in | Ground terminal; connect to the thermal pad and the ground plane of the circuit, and it must be grounded at all times. |
| 18 | SW | output | Inductor connection; connect to the switched side of the external inductor. |
| 19 | BOOT | input | High-side MOSFET gate driver supply; connect a 0.01-μF ceramic capacitor (rated above 10 V) from BOOT to SW. |
| 20 | PMIDI | power_out | Reverse blocking and high-side MOSFET connection point for the high-power IN input; bypass with at least 4.7 μF, and the output is not current limited. |
| 21 | IN | power_in | Input power supply from the external DC supply (rated 20 V absolute max, 4.2 V to 10 V operating for BQ24161); bypass to PGND with at least 1 μF. |
| 22 | USB | power_in | USB input power supply from an AC adapter or USB port (4.2 V to 6 V operating); bypass to PGND with at least 1 μF. |
| 23 | PMIDU | power_out | Reverse blocking and high-side MOSFET connection point for the USB input; bypass with at least 4.7 μF, and the output is not current limited. |
| 24 | CD | input | Hardware chip disable input: high places the device in high-z mode, low is normal operation; do not leave unconnected. |
| 25 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | VQFN-24-EP(4x4) |
| Category | Power Supply Chip |
| Pins | 25 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| System regulation voltage, charge enabled, VBAT < VMINSYS | VSYS(REG) | 3.6 | 3.7 | 3.82 | V | Charge Enabled, VBAT < VMINSYS, BQ24160, 1, 1B, 8 | 8 |
| System regulation voltage, battery FET off | VSYS(REG) | 1.5 | 3 | 4.17 | % above VBATREG | Battery FET turned off (Charge Disabled, TS Fault or Charging Terminated); VBATREG + x% | 8 |
| Minimum system regulation voltage | VMINSYS | 3.4 | 3.5 | 3.62 | V | Charge enabled, VBAT < VMINSYS, Input current limit or VINDPM active, BQ24160, 1, 1B, 8 | 8 |
| Battery charger MOSFET on-resistance | RON(BAT-SYS) | | 50 | 70 | mΩ | Measured from BAT to SYS, VBAT = 4.2V, RGE pkg | 8 |
| Charge voltage programmable range | VBATREG | 3.5 | | 4.44 | V | Operating in voltage regulation, Programmable range | 8 |
| Voltage regulation accuracy | VBATREG | -1 | | 1 | % | Operating in voltage regulation | 8 |
| Fast charge current range | ICHARGE | 550 | | 2500 | mA | VBATSHRT ≤ VBAT < VBAT(REG) programmable range | 8 |
| Fast charge current accuracy | ICHARGE | -10 | | 10 | % | 0°C to 125°C | 8 |
| Battery short circuit threshold | VBATSHRT | 1.9 | 2 | 2.1 | V | 100mV Hysteresis, BQ24161, 3, 8 | 8 |
| Termination charge current accuracy | ITERM | -40 | | 40 | % | ITERM = 50mA | 8 |
| Termination charge current accuracy | ITERM | -20 | | 20 | % | ITERM = 100mA | 8 |
| Termination charge current accuracy | ITERM | -15 | | 15 | % | ITERM ≥ 150mA | 8 |
| USB input current limit | IIN_USB | 90 | 95 | 100 | mA | USB charge mode, VUSB = 5V, IUSBLIM = USB100 | 9 |
| USB input current limit | IIN_USB | 450 | 475 | 500 | mA | USB charge mode, VUSB = 5V, IUSBLIM = USB500 | 9 |
| USB input current limit | IIN_USB | 1250 | 1400 | 1500 | mA | USB charge mode, VUSB = 5V, IUSBLIM = 1.5A | 9 |
| IN input current limit | IIN_IN | 1.35 | 1.5 | 1.65 | A | IN charge mode, VIN = 5V, IINLIM = 1.5A | 9 |
| IN input current limit | IIN_IN | 2.3 | 2.5 | 2.8 | A | IN charge mode, VIN = 5V, IINLIM = 2.5A | 9 |
| Input based DPM threshold range | VIN_DPM | 4.2 | | 4.76 | V | Charge mode, programmable via I2C, both inputs | 9 |
| VIN_DPM threshold accuracy | VIN_DPM | -2 | | 2 | % | | 9 |
| Internal bias regulator voltage | VDRV | 5 | 5.2 | 5.45 | V | VSUPPLY > 5.45V | 9 |
| IC active threshold voltage | VUVLO | 3.6 | 3.8 | 4 | V | VIN rising | 9 |
| Sleep-mode entry threshold | VSLP | 0 | 40 | 100 | mV | 2.0V ≤VBAT ≤VBATREG, VIN falling | 9 |
| Sleep-mode exit hysteresis | VSLP_EXIT | 40 | 100 | 175 | mV | 2.0V ≤VBAT ≤VBATREG | 9 |
| USB input supply OVP threshold | VOVP | 6.3 | 6.5 | 6.7 | V | USB, VUSB Rising | 9 |
| IN input supply OVP threshold | VOVP | 10.3 | 10.5 | 10.7 | V | IN, VIN Rising (BQ24160/1/1B/3) | 9 |
| Battery OVP threshold voltage | VBOVP | 1.025 | 1.05 | 1.075 | V | VBAT threshold over VOREG to turn off charger during charge; × VBATREG | 9 |
| Cycle-by-cycle current limit | ILIMIT | 4.1 | 4.9 | 5.6 | A | VSYS shorted | 9 |
| Safety timer accuracy | | -20 | | 20 | % | BQ24160/1/1B/3 Only | 10 |
| Reverse blocking MOSFET on-resistance (USB to PMIDU) | | | 95 | 175 | mΩ | IIN_LIMIT = 500mA, Measured from USB to PMIDU | 10 |
| Reverse blocking MOSFET on-resistance (IN to PMIDI) | | | 45 | 80 | mΩ | IIN_LIMIT = 500mA, Measured from IN to PMIDI | 10 |
| Top switching MOSFET on-resistance (PMIDU to SW) | | | 100 | 175 | mΩ | Measured from PMIDU to SW | 10 |
| Top switching MOSFET on-resistance (PMIDI to SW) | | | 65 | 110 | mΩ | Measured from PMIDI to SW | 10 |
| Bottom N-channel MOSFET on-resistance | | | 65 | 115 | mΩ | Measured from SW to PGND | 10 |
| Oscillator frequency | fOSC | 1.35 | 1.5 | 1.65 | MHz | | 10 |
| Good Battery threshold | VBATGD | 3.6 | 3.8 | 3.9 | V | | 10 |
| PSEL, CD input high logic level | VIH | 1.3 | | | V | | 9 |
| PSEL, CD input low logic level | VIL | | | 0.4 | V | | 9 |
| Low-level output saturation voltage (STAT, INT) | VOL | | | 0.4 | V | IO = 10mA, sink current | 9 |
| Supply current, PWM switching | ISUPPLY | | | 15 | mA | PWM switching | 8 |
| Supply current, High-Z Mode | ISUPPLY | | | 175 | μA | 0°C < TJ < 85°C, High-Z Mode | 8 |
| Pin voltage IN, USB | | -2 | | 20 | V | with respect to VSS | 7 |
| Pin voltage PMIDI, PMIDU, BOOT | | -0.3 | | 20 | V | with respect to VSS | 7 |
| Pin voltage SW | | -0.7 | | 12 | V | with respect to VSS | 7 |
| Pin voltage SDA, SCL, SYS, BAT, STAT, BGATE, DRV, TS, D+, D-, INT, PSEL, CD | | -0.3 | | 7 | V | with respect to VSS | 7 |
| BOOT to SW voltage | | -0.3 | | 7 | V | | 7 |
| Junction temperature | TJ | -40 | | 125 | °C | | 7 |
| Storage temperature range | Tstg | -65 | | 150 | °C | | 7 |
| Operating free-air temperature range | | -40 | | 85 | °C | | 7 |
| IN operating voltage range (BQ24160/1/3) | VIN | 4.2 | | 10 | V | | 7 |
| USB operating range | VUSB | 4.2 | | 6 | V | | 7 |
| Operating junction temperature range | TJ | 0 | | 125 | °C | | 7 |
| Junction-to-ambient thermal resistance | θJA | | 32.6 | | °C/W | 24 PINS (RGE) | 8 |
| Junction-to-case (top) thermal resistance | θJCtop | | 30.5 | | °C/W | 24 PINS (RGE) | 8 |
## CAD (KiCad official)
- Symbol: `BQ24161RGER`
- Footprint: `Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm`
- 3D model: VQFN-24-EP(4x4) (KiCad packages3D, STEP)
- 3D model files: `bq24161rger-etched.step` / `bq24161rger-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bq24161rger.step` / `bq24161rger.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/bq24161rger.pdf) (54 pp, sha256 `5c151470748871c8`, retrieved 2026-11-02, tier: manufacturer)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bq24161rger-datasheet.pdf)