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BQ24052DSQT

Texas Instruments · Battery Management · WSON-10-EP(2x2)

BQ24052DSQT from Texas Instruments, in a WSON-10-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IN power_in Input power connected to the external DC supply (AC adapter or USB port), recommended IN voltage range 3.5 V to 28 V with a 1 µF to 10 µF bypass capacitor from IN to VSS.
2 ISET input Programs the fast-charge current; an external resistor from ISET to VSS sets the value, with range 52.3 kΩ (10 mA) to 540 Ω (1 A).
3 VSS power_in Ground terminal; must be connected to ground at all times and to the same potential as the thermal pad.
4 PRE-TERM input Programs the current termination threshold (5% to 50% of IOUT) and sets the precharge current to twice the termination current, using a programming resistor of 1 kΩ to 10 kΩ.
5 D+ input USB port D+ input connection used for automatic input source detection.
6 D- input USB port D- input connection used for automatic input source detection.
7 ISET2 input Programs the input/output current limit for USB or adaptor: High = 500 mA max, Low = ISET, Float = 100 mA max.
8 CHG output Open-drain charge status output: low (FET on) indicates charging, high impedance indicates no charge or charge complete, with sink current limited to 15 mA.
9 TS input Temperature sense input for the battery-pack NTC thermistor; floating or pulled high enters TTDM and disables TS monitoring, while pulling it low disables the IC.
10 OUT power_out Battery connection and charge output with continuous current up to 1.25 A absolute maximum; the average system load should not prevent full charging within the 10-hour safety timer, with a 1 µF to 10 µF bypass capacitor.
11 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WSON-10-EP(2x2)
Category Power Management (PMIC)
Pins 11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input voltage range, IN VIN 3.5 28 V IN voltage range 5
Input voltage, IN (absolute max) VIN -0.3 30 V with respect to VSS 5
Output voltage, OUT (absolute max) VOUT -0.3 7 V with respect to VSS 5
PRE-TERM, ISET, ISET2, TS, CHG, D+, D- voltage (absolute max) -0.3 7 V with respect to VSS 5
Input current IN (absolute max) IIN 1.25 A 5
Output current continuous OUT (absolute max) IOUT 1.25 A Continuous 5
Output sink current CHG (absolute max) 15 mA 5
Junction temperature (absolute max) TJ -40 150 °C 5
Storage temperature range Tstg -65 150 °C 5
Junction temperature, operating TJ 0 125 °C 5
IN operating voltage range (restricted by VDPM and VOVP) 4.45 6.45 V 5
RPRE-TERM precharge and termination programming resistor RPRE-TERM 1 10 kΩ Programs precharge and termination current thresholds 5
RISET fast-charge programming resistor RISET 0.54 52.3 kΩ Fast-charge current programming resistor 5
RTS 100k NTC thermistor range without entering TTDM (BQ24052) RTS 24 885 kΩ 100k NTC thermistor range without entering TTDM, BQ24052 5
Junction-to-ambient thermal resistance RθJA 63.5 °C/W DSQ (WSON) 10 pins 6
Junction-to-case (top) thermal resistance RθJC(top) 79.5 °C/W DSQ (WSON) 10 pins 6
Junction-to-board thermal resistance RθJB 33.9 °C/W DSQ (WSON) 10 pins 6
Junction-to-top characterization parameter ψJT 7.8 °C/W DSQ (WSON) 10 pins 6
Junction-to-board characterization parameter ψJB 34.3 °C/W DSQ (WSON) 10 pins 6
Junction-to-case (bottom) thermal resistance RθJC(bot) 7.5 °C/W DSQ (WSON) 10 pins 6
Undervoltage lock-out UVLO 3.15 3.3 3.45 V Exit VIN: 0V → 4V; Update based on sim/char 6
Hysteresis on UVLO VHYS_UVLO 175 230 280 mV VIN: 4V→0V, VUVLO_FALL = VUVLO_RISE -VHYS-UVLO 6
Input power good detection threshold VIN-DT 30 80 145 mV Input power good if VIN > VOUT + VIN-DT; VOUT = 3.6V, VIN: 3.5V → 4V 6
Input overvoltage protection threshold VOVP 6.5 6.65 6.8 V VIN: 5V → 7V (50/52) 6
USB/Adaptor low input voltage protection, USB mode VIN-DPM 4.34 4.4 4.46 V Feature active in USB mode; Limit Input Source Current to 50mA; VOUT = 3.5V; RISET = 825Ω 6
USB/Adaptor low input voltage protection, Adaptor mode VIN-DPM 4.24 4.3 4.36 V Feature active in Adaptor mode; Limit Input Source Current to 50mA; VOUT = 3.5V; RISET = 825Ω 6
USB input I-Limit 100 mA IIN-USB-CL 85 92 100 mA ISET2 = Float; RISET = 825Ω 6
USB input I-Limit 500 mA IIN-USB-CL 430 462 500 mA ISET2 = High; RISET = 825Ω 6
Highest resistor value considered a fault (short) RISET_SHORT 280 500 Ω Riset: 600Ω → 250Ω, Iout latches off. Cycle power to Reset. USB100 mode. Monitored for Iout>90mA 6
OUT pin short-circuit detection threshold / precharge threshold VOUT(SC) 0.75 0.8 0.85 V VOUT: 3V → 0.5V, no deglitch 6
Source current to OUT pin during short-circuit detection IOUT(SC) 10 15 20 mA 6
Battery regulation voltage VOUT(REG) 4.16 4.2 4.23 V VIN = 5.5V, IOUT = 25mA, VTS-45°C ≤ VTS ≤ VTS-0°C 6
Battery hot regulation voltage VO_HT(REG) 4.02 4.06 4.1 V VIN = 5.5V, IOUT = 25mA, VTS-60°C ≤ VTS ≤ VTS-45°C 6
Fast charge current factor KISET, 50 < IOUT < 1 A KISET 510 540 570 AΩ RISET = KISET /IOUT 50 < IOUT < 1 A 7
Fast charge current factor KISET, 25 < IOUT < 50 mA KISET 480 527 600 AΩ RISET = KISET /IOUT 25 < IOUT < 50 mA 7
Fast charge current factor KISET, 10 < IOUT < 25 mA KISET 350 520 680 AΩ RISET = KISET /IOUT 10 < IOUT < 25 mA 7
Precharge to fast-charge transition threshold VLOWV 2.4 2.5 2.6 V 7
Precharge current level, default setting %PRECHG 18 20 22 %IOUT-CC VOUT < VLOWV; RPRE-TERM = High Z (≥13kΩ); RISET = 1k 7
Precharge factor KPRE-CHG, 2k to 10kΩ KPRE-CHG 90 100 110 Ω/% VOUT < VLOWV, VIN = 5V, RPRE-TERM = 2k to 10kΩ; RISET = 1080Ω, RPRE-TERM = KPRE-CHG × %IFAST-CHG, where %IFAST-CHG is 20 to 100% 7
Precharge factor KPRE-CHG, 1k to 2kΩ KPRE-CHG 84 100 117 Ω/% VOUT < VLOWV, VIN = 5V, RPRE-TERM = 1k to 2kΩ; RISET = 1080Ω, RPRE-TERM = KPRE-CHG × %IFAST-CHG, where %IFAST-CHG is 10% to 20% 7
Termination current threshold, default setting %TERM 9 10 11 %IOUT-CC VOUT > VRCH; RPRE-TERM = High Z (≥13kΩ); RISET = 1k 7
Termination factor KTERM, 2k to 10kΩ KTERM 182 200 216 Ω/% VOUT > VRCH, VIN = 5V, RPRE-TERM = 2k to 10kΩ; RISET = 750Ω; KTERM × %IFAST-CHG, where %IFAST-CHG is 10 to 50% 7
Termination factor KTERM, 1k to 2kΩ KTERM 174 199 224 Ω/% VOUT > VRCH, VIN = 5V, RPRE-TERM = 1k to 2kΩ; RISET = 750Ω; KTERM × %IFAST-CHG, where %IFAST-CHG is 5 to 10% 7
Current for programming the term. and precharge with resistor IPRE-TERM 71 75 81 μA RPRE-TERM = 2k, VOUT = 4.15V 7
Elevated PRE-TERM current during start of charge (ITerm-Start) ITerm-Start 80 85 92 μA Elevated PRE-TERM current for tTerm-Start, during start of charge to prevent recharge of full battery 7
Recharge detection threshold, normal temp (offset from VO(REG)) VRCH -0.12 -0.095 -0.07 V VIN = 5V, VTS = 0.5V, VOUT: 4.25V → VRCH 7
Recharge detection threshold, hot temp (offset from VO_HT(REG)) VRCH -0.13 -0.105 -0.08 V VIN = 5V, VTS = 0.2V, VOUT: 4.15V → VRCH 7
VOUT reduced regulation during battery detect (offset from VO(REG)) VREG-BD -0.45 -0.4 -0.35 V VIN = 5V, VTS = 0.5V, Battery Absent 7
High battery detection threshold (offset from VO(REG)) VBD-HI -0.15 -0.1 -0.05 V VIN = 5V, VTS = 0.5V, Battery Absent 7
Low battery detection threshold (offset from VREG-BD) VBD-LO 0.05 0.1 0.15 V VIN = 5V, VTS = 0.5V, Battery Absent 7
NTC bias current, 100k NTC thermistor (BQ24052) INTC-100k 4.8 5 5.2 μA VTS = 0.3V 8
BQ24052 bias current when charging is disabled INTC-DIS-100k 4.4 5 5.8 μA VTS = 0V 8
INTC reduced prior to TTDM, BQ24052 INTC-FLDBK-100k 1.1 1.5 1.9 μA VTS: Set to 1.525V 8
Termination and timer disable mode threshold, enter VTTDM(TS) 1550 1600 1650 mV VTS: 0.5V → 1.7V; Timer Held in Reset 8
TS maximum voltage clamp VCLAMP(TS) 1800 1950 2000 mV VTS= Open (Float) 8
Low temperature CHG pending threshold VTS-0°C 1205 1230 1255 mV Low Temp Charging to Pending; VTS: 1V → 1.5V 8
Low temperature half charge threshold VTS-10°C 765 790 815 mV Normal charging to low temp charging; VTS: 0.5V → 1V 8
High temperature at 4.1V threshold VTS-45°C 263 278 293 mV Normal charging to high temp CHG; VTS: 0.5V → 0.2V 8
High temperature disable threshold VTS-60°C 170 178 186 mV Disable High temp charge to pending; VTS: 0.2V → 0.1V 8
Charge enable threshold, 100k NTC VTS-EN-100k 140 150 160 mV VTS: 0V → 0.175V 8
Temperature regulation limit TJ(REG) 125 °C 8
Thermal shutdown temperature TJ(OFF) 155 °C 8
Thermal shutdown hysteresis TJ(OFF-HYS) 20 °C 8
Logic LOW input voltage on ISET2 VIL 0.4 V Sink more than 8μA 8
Logic HIGH input voltage on ISET2 VIH 1.4 V Source more than 8μA 8
ISET2 float voltage VFLT 650 900 1200 mV 8
Bias at D+ during detection routine VD+ 0.475 0.6 0.7 V Can source at least 200μA 9
Current sink at D- pin during detection routine ID- 50 100 150 μA VD- = 0.5V 9
Current limit at D+ pin during detection routine ID+ 1.5 mA VD+ = 0V 9
D+ leakage when not in detection mode ID+_LEAK 1 μA VD+ = 5V 9
D- leakage when not in detection mode ID-_LEAK 1 μA VD- = 5V 9
Output LOW voltage on CHG VOL 0.4 V ISINK = 5mA 9
Leakage current into IC on CHG Ilkg 1 μA V CHG = 5V 9
Deglitch time, fast-charge to precharge transition tDGL2(LOWV) 32 ms 10
Deglitch time, termination detected tDGL(TERM) 29 ms 10
Elevated termination threshold initially active tTerm-Start 1.25 min 10
Precharge safety timer value tPRECHG 1700 1940 2250 s Restarts when entering precharge; Always enabled when in precharge 10
Charge safety timer value tMAXCH 34000 38800 45000 s Clears fault or resets at UVLO, TS (CE) disable, OUT Short, exiting LOWV and Refresh 10
Input overvoltage blanking time tDGL(OVP-SET) 113 μs VIN: 5V → 12V 10

CAD (KiCad official)

  • Symbol: BQ24052DSQT
  • Footprint: Package_DFN_QFN:Texas_DSQ0010A_WSON-10-1EP_2x2mm_P0.4mm_EP0.9x1.5mm
  • 3D model: WSON-10-EP(2x2) (KiCad packages3D, STEP)
  • 3D model files: bq24052dsqt-etched.step / bq24052dsqt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bq24052dsqt.step / bq24052dsqt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (39 pp, sha256 f6c87b271cd20230, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF