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BQ2057WSNTR

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Texas Instruments Battery Management ICs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BQ2057WSNTR

Texas Instruments · Battery Management ICs · SOIC-8

BQ2057WSNTR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SNS input Current sense input that senses battery current via the voltage across an external sense resistor, which can be on the high or low side of the battery.
2 BAT input Voltage sense input tied directly to the positive side of the battery.
3 VCC power_in Supply voltage input (4.5 V to 15 V recommended, -0.3 to +18 V absolute max) and current reference for high-side sensing configuration.
4 TS input Temperature sense input for an external battery-temperature monitoring circuit; connecting it to VCC/2 disables this feature.
5 STAT output 3-state charge status output indicating charge in progress, charge complete, and temperature fault or sleep mode (sink 20 mA max, source 10 mA max).
6 VSS power_in Ground.
7 CC output Charge control source-follower output that drives an external PNP or P-channel MOSFET pass transistor for current and voltage regulation (40 mA max output current).
8 COMP input Charge-rate compensation (AutoComp) input that sets the compensation level; connect to VCC for high-side sensing or VSS for low-side sensing to disable it, and do not leave it floating.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-8
Category Power Management ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VCC -0.3 18 V VCC with respect to GND 5
Input voltage SNS, BAT, TS, COMP -0.3 V with respect to GND; max printed as VCC+0.3 V 5
STAT pin sink current 20 mA not to exceed PD 5
STAT pin source current 10 mA not to exceed PD 5
CC pin output current 40 mA not to exceed PD 5
Total power dissipation PD 300 mW at 25°C 5
Operating free-air temperature range TA -20 70 °C 5
Storage temperature range Tstg -40 125 °C 5
Lead temperature 300 °C soldering, 10 s 5
Supply voltage VCC 4.5 15 V 5
Operating free-air temperature range TA -20 70 °C 5
VCC current I(VCC) 2 4 mA VCC > VCC(min), Excluding external loads 5
VCC sleep current (bq2057T and bq2057W) I(VCCS) 10 µA V(BAT) ≥ V(min), V(BAT), VCC ≥ 0.8 V 5
Input bias current on BAT pin IIB(BAT) 1 µA V(BAT) = V(REG) 5
Input bias current on SNS pin IIB(SNS) 5 µA V(SNS)= 5 V 5
Input bias current on TS pin IIB(TS) 5 µA V(TS) = 5 V 5
Input bias current on COMP pin IIB(COMP) 5 µA V(COMP) = 5 V 5
Output voltage (bq2057W) VO(REG) 8.317 8.4 8.484 V bq2057W, See Notes 1, 2, 3 5
Current regulation threshold, high-side sensing (bq2057T and bq2057W) V(SNS) 113.6 125 137.5 mV High-side current sensing configuration 6
Current regulation threshold, low-side sensing (bq2057T and bq2057W) V(SNS) 118.1 130 143 mV Low-side current sensing configuration 6
Charge termination current detect threshold I(TERM) -24 -14 -4 mV Voltage at pin SNS, relative to VCC for high-side sensing, and to Vss for low-side sensing, 0°C ≤ TA ≤ 50°C 6
Lower temperature threshold V(TS1) 29.1 30 30.9 %VCC TS pin voltage 6
Upper temperature threshold V(TS2) 58.3 60 61.8 %VCC TS pin voltage 6
Precharge threshold (bq2057W) V(min) 6.18 6.3 6.43 V bq2057W 6
Precharge current regulation I(PRECHG) 13 mV Voltage at pin SNS, relative to VCC for high-side sensing, and to VSS for low-side sensing, 0°C ≤ TA ≤ 50°C 6
Precharge current regulation, high-side sensing I(PRECHG) 3 13 22 mV Voltage at pin SNS, relative to VCC for high-side sensing, 0°C ≤ TA ≤ 50°C, VCC = 5 V 6
Recharge threshold (bq2057T and bq2057W), offset from VO(REG) V(RCH) -204 -200 -196 mV bq2057T and bq2057W; printed as VO(REG)−196/200/204 mV 6
AutoComp gain G(COMP) 1.87 2.2 2.53 V/V V(BAT)+0.3 V ≤ VCC≤ VCC(max), bq2057, bq2057C, bq2057T, bq2057W 6
AutoComp gain, low-side sensing G(COMP) 2.09 2.4 2.76 V/V V(BAT)+0.3 V ≤ VCC ≤ VCC(max), bq2057T and bq2057W in low-side sensing configuration 6
STAT output low voltage VOL(STAT) 0.7 V IOL = 10 mA 6
CC output low voltage VOL(CC) 1.5 V IO(CC) = 5 mA (sink) 6
CC sink current IO(CC) 5 40 mA Not to exceed power rating specification (PD) 6

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin TS: 8−Pin TSSOP 8−Pin SOIC Narrow (SN) 20

CAD (KiCad official)

  • Symbol: BQ2057WSNTR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: bq2057wsntr-etched.step / bq2057wsntr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bq2057wsntr.step / bq2057wsntr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (33 pp, sha256 bb27fef0324cafba, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF