component
BQ2026DBZR
Public Made by Adomby adom
Texas Instruments Non-Volatile Memory (ROM), SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| bq2026dbzr-etched.glb | 13d ago |
| bq2026dbzr-etched.step | 13d ago |
| bq2026dbzr-hero.glb | 13d ago |
| bq2026dbzr-hero.overlay.json | 13d ago |
| bq2026dbzr.glb | 13d ago |
| bq2026dbzr.kicad_mod | 13d ago |
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| bq2026dbzr.lbr | 13d ago |
| bq2026dbzr.step | 13d ago |
| package.json | 13d ago |
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| README.md | 13d ago |
BQ2026DBZR
Texas Instruments · Non-Volatile Memory (ROM) · SOT-23-3
BQ2026DBZR from Texas Instruments, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SDQ | bidirectional | Single-wire bidirectional data pin that is also the device's only power source; it is an open-drain N-channel output needing a host pullup (5 kΩ external pullup or source current) to VPU, with VPU specified from 2.65 V to 5.5 V and an absolute-maximum DC voltage on VPU of -0.3 V to 12.5 V, and its low-level output current is limited to 5 mA. |
| 2 | VSS | power_in | Ground reference for the device; all voltages in the datasheet are specified relative to VSS. |
| 3 | VSS | power_in | Second ground pin on the DBZ package, listed alongside pin 2 as VSS in the pin table. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23-3 |
| Category | Memory |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC voltage applied to VPU | -0.3 | 12.5 | V | See Figure 1 | 3 | ||
| Low-level output current, IOL | IOL | 5 | mA | 3 | |||
| ESD IEC 61000-4-2 air discharge | 6 | kV | SDQ to VSS, VSS to SDQ | 3 | |||
| Operating free-air temperature range | TA | -20 | 70 | °C | 3 | ||
| Storage temperature range | Tstg | -55 | 125 | °C | 3 | ||
| Supply voltage VPU operating range | VPU | 2.65 | 5.5 | V | TA = -20°C to 70°C; stated as VPU(min) = 2.65 VDC to 5.5 VDC in electrical characteristics header | 4 | |
| Supply current | ISDQ | 20 | μA | VPU = 5.5 V | 4 | ||
| Low-level output voltage | VOL | 0.4 | V | Logic 0, VPU = 5.5 V, IOL = 4 mA, SDQ pin | 4 | ||
| Low-level output current (sink) | IOL | 4 | mA | VOL = 0.4 V, SDQ pin | 4 | ||
| Low-level input voltage | VIL | 0.8 | V | Logic 0 | 4 | ||
| High-level input voltage | VIH | 2.2 | V | Logic 1 | 4 | ||
| Programming voltage | VPP | 11.5 | 12 | V | 4 | ||
| Input leakage | Ilkg | 1.4 | μA | 4 | |||
| Input capacitance | CI | 1.2 | nF | 4 | |||
| Bit cycle time | tc | 60 | 120 | μs | Footnote (1): 5-kΩ series resistor between SDQ pin and VPU | 4 | |
| Write start cycle | tWSTRB | 1 | 15 | μs | Footnote (1): 5-kΩ series resistor between SDQ pin and VPU | 4 | |
| Write data setup | tWDSU | 15 | μs | Footnote (1): 5-kΩ series resistor between SDQ pin and VPU | 4 | ||
| Write data hold | tWDH | 60 | μs | Footnote (1): 5-kΩ series resistor between SDQ pin and VPU; footnote (2): tWDH must be less than tc | 4 | ||
| Recovery time | trec | 1 | μs | Footnote (1): 5-kΩ series resistor between SDQ pin and VPU | 4 | ||
| Read start cycle | tRSTRB | 1 | 13 | μs | Footnote (1): 5-kΩ series resistor between SDQ pin and VPU | 4 | |
| Output data delay | tODD | 13 | μs | Footnote (1): 5-kΩ series resistor between SDQ pin and VPU | 4 | ||
| Output data hold | tODHO | 17 | 60 | μs | Footnote (1): 5-kΩ series resistor between SDQ pin and VPU | 4 | |
| Reset time | tRST | 480 | μs | 4 | |||
| Presence pulse delay | tPPD | 15 | 64 | μs | Footnote (1): 5-kΩ series resistor between SDQ pin and VPU | 4 | |
| Presence pulse | tPP | 60 | 240 | μs | Footnote (1): 5-kΩ series resistor between SDQ pin and VPU | 4 | |
| EPROM programming time | tEPROG | 480 | μs | 4 | |||
| Program setup time | tPSU | 5 | μs | 4 | |||
| Program recovery time | tPREC | 5 | μs | 4 | |||
| Program rising-edge time | tPRE | 5 | μs | 4 | |||
| Program falling-edge time | tPFE | 5 | μs | 4 | |||
| Reset recovery time | tRSTREC | 480 | μs | 4 |
CAD (KiCad official)
- Symbol:
BQ2026DBZR - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
bq2026dbzr-etched.step/bq2026dbzr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bq2026dbzr.step/bq2026dbzr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (28 pp, sha256
c65d62803451ce90, retrieved 2026-10-28, tier: manufacturer) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).