component
BNST02N10
Public Made by Adomby adom
BORN MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BNST02N10
BORN · MOSFETs · SOT-23
BNST02N10 from BORN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.0 V min, 1.6 V typ and 2.5 V max at 250 uA. |
| 2 | S | passive | Source; connects to the body diode anode, with continuous drain current of 2 A and pulsed drain current of 8 A. |
| 3 | D | passive | Drain; drain-source voltage rated at 100 V, with RDS(on) typ 230 mΩ at VGS=10 V and ID=2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BORN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDS | 100 | V | VGS = 0V, ID = 250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS = VGS, ID = 250uA | 2 |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 100V, VGS = 0V | 2 | ||
| Gate Body Leakage | IGSS | 100 | nA | VGS = ±20V, VDS = 0V | 2 | ||
| Drain-Source On-State Resistance (VGS = 10V) | RDS(on) | 230 | 290 | mΩ | VGS = 10V, ID = 2A | 2 | |
| Drain-Source On-State Resistance (VGS = 4.5V) | RDS(on) | 240 | 330 | mΩ | VGS = 4.5V, ID = 2A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS = 2.0A, VGS = 0V | 2 | ||
| Drain-Source Voltage | BVDSS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 2 | A | 1 | |||
| Pulsed Drain Current | IDM | 8 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.25 | W | TA = 25◦C | 1 | ||
| Junction Range | TJ | 150 | ◦C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ◦C | 1 |
CAD (KiCad official)
- Symbol:
BNST02N10 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bnst02n10-etched.step/bnst02n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bnst02n10.step/bnst02n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: BORN datasheet (5 pp, sha256
cc0d8dc82496aea3, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BNST02N10
**BORN** · MOSFETs · SOT-23
BNST02N10 from BORN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.0 V min, 1.6 V typ and 2.5 V max at 250 uA. |
| 2 | S | passive | Source; connects to the body diode anode, with continuous drain current of 2 A and pulsed drain current of 8 A. |
| 3 | D | passive | Drain; drain-source voltage rated at 100 V, with RDS(on) typ 230 mΩ at VGS=10 V and ID=2 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BORN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDS | 100 | | | V | VGS = 0V, ID = 250uA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS = VGS, ID = 250uA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS = 100V, VGS = 0V | 2 |
| Gate Body Leakage | IGSS | | | 100 | nA | VGS = ±20V, VDS = 0V | 2 |
| Drain-Source On-State Resistance (VGS = 10V) | RDS(on) | | 230 | 290 | mΩ | VGS = 10V, ID = 2A | 2 |
| Drain-Source On-State Resistance (VGS = 4.5V) | RDS(on) | | 240 | 330 | mΩ | VGS = 4.5V, ID = 2A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | IS = 2.0A, VGS = 0V | 2 |
| Drain-Source Voltage | BVDSS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 2 | A | | 1 |
| Pulsed Drain Current | IDM | | | 8 | A | | 1 |
| Maximum Power Dissipation | PD | | | 1.25 | W | TA = 25◦C | 1 |
| Junction Range | TJ | | | 150 | ◦C | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | ◦C | | 1 |
## CAD (KiCad official)
- Symbol: `BNST02N10`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bnst02n10-etched.step` / `bnst02n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bnst02n10.step` / `bnst02n10.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [BORN datasheet](docs/bnst02n10-datasheet.pdf) (5 pp, sha256 `cc0d8dc82496aea3`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bnst02n10-datasheet.pdf)